Interfacial free energies from substrate curvature measurements of the creep of multilayer thin films

1994 ◽  
Vol 42 (3) ◽  
pp. 1031-1038 ◽  
Author(s):  
D. Josell
Keyword(s):  
Thin Films ◽  
Multilayer Thin Films ◽  
Free Energies ◽  
Curvature Measurements ◽  
Substrate Curvature ◽  
Interfacial Free Energies

Interfacial Free Energies and the Creep of Multilayer Thin Films

1997 ◽  
Vol 505 ◽  
Author(s):  
D. Josell ◽  
W. C. Carter
Keyword(s):  
Thin Films ◽  
New Technique ◽  
Multilayer Thin Films ◽  
Free Energies ◽  
Creep Properties ◽  
Multilayer Foils ◽  
A New Technique ◽  
Interfacial Free Energies

ABSTRACTExperiments utilizing the creep properties of multilayer thin films to determine interfacial free energies are presented with essential theory. A new technique utilizing tubular multilayer foils is then described.

Determining Interfacial Free Energies from Creep Experiments on Silver-Iron Multilayers

1994 ◽  
Vol 356 ◽  
Author(s):  
D. Josell ◽  
Z.L. Wang
Keyword(s):  
Thin Films ◽  
Free Energy ◽  
Boundary Diffusion ◽  
Interfacial Free Energy ◽  
Multilayer Thin Films ◽  
Free Energies ◽  
Diffusion Controlled ◽  
Interfacial Free Energies ◽  
Over Time ◽  
Microstructural Data

AbstractExperiments were conducted on multilayer thin films to determine the free energies associated with silver/iron interfaces. Creep studies determined the loads for which the multilayers neither shrank nor stretched over time. Microstructural data was used with the zero creep loads in a model for grain boundary diffusion controlled creep in multilayers to determine the interfacial free energy.

Studies of Ag/Fe Interfacial Free Energies by Biaxial Zero Creep Experiments

2003 ◽  
Vol 10 (05) ◽  
pp. 763-769 ◽  
Author(s):  
Bing An ◽  
Tong-Jun Zhang ◽  
Chao Yuan ◽  
Kun Cui
Keyword(s):  
Rf Magnetron Sputtering ◽  
Film Stress ◽  
Multilayer Thin Films ◽  
Free Energies ◽  
Stress Monitoring ◽  
Isothermal Process ◽  
Long Duration ◽  
Grain Distribution ◽  
Interface Free Energy ◽  
Interfacial Free Energies

Biaxial zero creep experiments based on the Josell model were performed on Ag/Fe multilayer thin films to determine their interfacial free energies. Various multilayer samples on stiff wafers prepared by RF magnetron sputtering were subjected to annealing of long duration at 550°C, while a substrate curvature technique was employed for real-time film stress monitoring. Sufficient plastic flow in films makes possible a zero creep equilibrium state to present during this isothermal process, and as a result the interfacial free energies in multilayer interfaces are equilibrated with the elastic strain energies arising from the substrate bending. There is no collapse in the annealed multilayer structures. They are still stably layer-built and exhibit a column grain distribution. XRD results show that Ag and Fe layers have (111) and (110) preferred orientations, respectively. In accordance with a revised Josell model, the equilibrium stresses were measured and the Ag (111)/ Fe (110) interface free energy at 550°C was found to be 0.97 ± 0.13 J/m 2.

Plastic properties of thin films on substrates as measured by submicron indentation hardness and substrate curvature techniques

1986 ◽  
Vol 1 (6) ◽  
pp. 845-851 ◽  
Author(s):  
M.F. Doerner ◽  
D.S. Gardner ◽  
W.D. Nix
Keyword(s):  
Thin Films ◽  
Plastic Deformation ◽  
Film Thickness ◽  
Indentation Hardness ◽  
Silicon Substrates ◽  
Strengthening Effect ◽  
Plastic Properties ◽  
Aluminum Films ◽  
Curvature Measurements ◽  
Substrate Curvature

Substrate curvature and submicron indentation measurements have been used recently to study plastic deformation in thin films on substrates. In the present work both of these techniques have been employed to study the strength of aluminum and tungsten thin films on silicon substrates. In the case of aluminum films on silicon substrates, the film strength is found to increase with decreasing thickness. Grain size variations with film thickness do not account for the variations in strength. Wafer curvature measurements give strengths higher than those predicted from hardness measurements suggesting the substrate plays a role in strengthening the film. The observed strengthening effect with decreased thickness may be due to image forces on dislocations in the film due to the elastically stiffer silicon substrate. For sputtered tungsten films, where the substrate is less stiff than the film, the film strength decreases with decreasing film thickness.

Stress Relaxation in Al-Si-Cu Thin Films and Lines

1994 ◽  
Vol 356 ◽  
Author(s):  
A. Witvrouw ◽  
J. Proost ◽  
B. Deweerdt ◽  
Ph. Roussel ◽  
K. Maex
Keyword(s):  
Thin Films ◽  
Activation Energy ◽  
Flow Stress ◽  
Stress Relaxation ◽  
Relaxation Data ◽  
Cu Films ◽  
Dislocation Glide ◽  
Average Activation Energy ◽  
Curvature Measurements ◽  
Substrate Curvature

AbstractSubstrate curvature measurements were used to study stress relaxation in Al-Si-Cu films at temperatures between 45 and 165 °C. Dislocation glide with an average activation energy, resp. athermal flow stress of 1.7 ± 0.2 eV, resp. 600 ± 200 MPa could describe the relaxation data for temperatures up to 120 °C well. Stress relaxation at 92 °C was found to progress much slower in 1 μm wide nitride passivated lines than in thin films or unpassivated lines.

Determination of Elastic Constants and Viscosity of Amorphous Thin Films From Substrate Curvature

1990 ◽  
Vol 188 ◽  
Author(s):  
Ann Witvrouw ◽  
Frans Spaepen
Keyword(s):  
Thin Films ◽  
Viscous Flow ◽  
Elastic Constants ◽  
Activation Enthalpy ◽  
Amorphous Thin Films ◽  
Curvature Measurements ◽  
Substrate Curvature

ABSTRACTSubstrate curvature measurements were used to monitor viscous flow in Pd79Si21 films at temperatures between 100 and 250°C. To determine the viscosity and the change in viscosity the elastic constants of the film were measured by depositing films on pre-bent substrates: E = 10 ± 1 1010 Pa and ν = 0.43 ± 0.04 The activation enthalpy for η is 13 ± 1 kJ/mole.

Elastic Constants and Viscosity of Amorphous PdSi/PdSiFe Multilayers

1991 ◽  
Vol 239 ◽  
Author(s):  
Ann Witvrouw ◽  
Pamela Campos ◽  
Frans Spaepen
Keyword(s):  
Thin Films ◽  
Viscous Flow ◽  
Elastic Constants ◽  
Repeat Length ◽  
Transient Period ◽  
Curvature Measurements ◽  
Substrate Curvature ◽  
Multilayered Thin Films

ABSTRACTThe biaxial elastic constants and viscosity between 100 and 300 °C of amorphous PdSi/PdSiFe multilayered thin films with repeat lengths between 2.0 and 4.9 nm have been determined using substrate curvature measurements. No dependence on repeat length has been seen for either property. Linear increases of the multilayer viscosities with time are observed. An analysis of the viscous flow of multilayers shows that in the present case this regime is reached after a very short transient period.

scholarly journals Phase separation during co-deposition of Al–Ge thin films

1992 ◽  
Vol 7 (3) ◽  
pp. 653-666 ◽  
Author(s):  
C.D. Adams ◽  
M. Atzmon ◽  
Y-T. Cheng ◽  
D.J. Srolovitz
Keyword(s):  
Thin Films ◽  
Phase Separation ◽  
Metastable Phase ◽  
Film Surface ◽  
Microstructure Development ◽  
Free Energies ◽  
Lateral Phase Separation ◽  
The Stability ◽  
Interfacial Free Energies ◽  
Film Substrate

We present the results of a combined experimental and theoretical investigation of phase separation and microstructure development in co-deposited Al–Ge thin films. For small film thicknesses and deposition temperatures above 150 °C the phase-separated films consist of an array of domains of the Al- and Ge-rich terminal phases (lateral phase separation). Films deposited at 100 °C or less contained one or both of the terminal phases plus a metastable phase. We show that the domain structure evolves during deposition in a manner consistent with a surface interdiffusion controlled process. As film thickness increases we observe a transition from the laterally phase-separated microstructure to a layered microstructure exhibiting phase separation perpendicular to the film/substrate interface (transverse phase separation), with Al segregating to the film surface. We present a thermodynamic argument based on the competition between surface and interfacial free energies to explain this transition. Finally, we discuss the stability of the transverse phase-separated microstructure in the thick-film limit in terms of the transport of Ge through the Al-rich surface layer.

Characterization of reactive phase formation in sputter-deposited Ni/Al multilayer thin films using TEM

1996 ◽  
Vol 54 ◽  
pp. 1000-1001
Author(s):  
G. Lucadamo ◽  
K. Barmak ◽  
C. Michaelsen
Keyword(s):  
Thin Films ◽  
Phase Formation ◽  
Dark Field ◽  
Nickel Layer ◽  
Multilayer Thin Films ◽  
Cross Sectional ◽  
Dark Field Imaging ◽  
Transmission Electron ◽  
Sputter Deposited ◽  
Constant Heating

The subject of reactive phase formation in multilayer thin films of varying periodicity has stimulated much research over the past few years. Recent studies have sought to understand the reactions that occur during the annealing of Ni/Al multilayers. Dark field imaging from transmission electron microscopy (TEM) studies in conjunction with in situ x-ray diffraction measurements, and calorimetry experiments (isothermal and constant heating rate), have yielded new insights into the sequence of phases that occur during annealing and the evolution of their microstructure.In this paper we report on reactive phase formation in sputter-deposited lNi:3Al multilayer thin films with a periodicity A (the combined thickness of an aluminum and nickel layer) from 2.5 to 320 nm. A cross-sectional TEM micrograph of an as-deposited film with a periodicity of 10 nm is shown in figure 1. This image shows diffraction contrast from the Ni grains and occasionally from the Al grains in their respective layers.

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