An effective and efficient numerical method for thermal management in 3D stacked integrated circuits

It is now widely recognized that the three-dimensional (3D) system integration is a key enabling technology to achieve the performance needs of future microprocessor integrated circuits (ICs). To provide modular thermal management in 3D-stacked ICs, the interlayer microfluidic cooling scheme is adopted and analyzed in this study focusing on a single cooling layer performance. The effects of cooling mode (single-phase versus phase-change) and stack/layer geometry on thermal management performance are quantitatively analyzed, and implications on the through-silicon-via scaling and electrical interconnect congestion are discussed. Also, the thermal and hydraulic performance of several two-phase refrigerants is discussed in comparison with single-phase cooling. The results show that the large internal pressure and the pumping pressure drop are significant limiting factors, along with significant mass flow rate maldistribution due to the presence of hot-spots. Nevertheless, two-phase cooling using R123 and R245ca refrigerants yields superior performance to single-phase cooling for the hot-spot fluxes approaching ∼300 W/cm2. In general, a hybrid cooling scheme with a dedicated approach to the hot-spot thermal management should greatly improve the two-phase cooling system performance and reliability by enabling a cooling-load-matched thermal design and by suppressing the mass flow rate maldistribution within the cooling layer.

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Benefits of vertically stacked integrated circuits for sequential logic

1996 IEEE International Symposium on Circuits and Systems. Circuits and Systems Connecting the World. ISCAS 96 ◽

10.1109/iscas.1996.541915 ◽

2002 ◽

Cited By ~ 6

Author(s):

M. Reber ◽

R. Tielert

Keyword(s):

Integrated Circuits ◽

Sequential Logic ◽

Stacked Integrated Circuits

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MCDM Applied to the Partitioning Problem of 3D-Stacked Integrated Circuits

Multiple Criteria Decision Making ◽

10.1007/978-3-319-39292-9_9 ◽

2016 ◽

pp. 165-187 ◽

Cited By ~ 1

Author(s):

Nguyen Anh Vu Doan ◽

Dragomir Milojevic ◽

Yves De Smet

Keyword(s):

Integrated Circuits ◽

Partitioning Problem ◽

Stacked Integrated Circuits

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Finite Element Analysis of Miniature Thermoelectric Cooler for the Thermal Management of Si-Based Photonic Integrated Circuits

ECS Meeting Abstracts ◽

10.1149/ma2021-02451395mtgabs ◽

2021 ◽

Vol MA2021-02 (45) ◽

pp. 1395-1395

Author(s):

Amit Tanwar ◽

Rajvinder Kaur ◽

Swatchith Lal ◽

Kafil M. Razeeb

Keyword(s):

Finite Element Analysis ◽

Finite Element ◽

Integrated Circuits ◽

Thermal Management ◽

Photonic Integrated Circuits ◽

Thermoelectric Cooler ◽

Element Analysis

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Thermal Simulation of 3-D Stacked Integrated Circuits with Layered Finite Element Method

2019 Photonics & Electromagnetics Research Symposium - Fall (PIERS - Fall) ◽

10.1109/piers-fall48861.2019.9021638 ◽

2019 ◽

Author(s):

Bo Li ◽

Min Tang ◽

Yuwen Zhi ◽

Huixian Yu

Keyword(s):

Finite Element Method ◽

Finite Element ◽

Integrated Circuits ◽

Thermal Simulation ◽

Element Method ◽

Stacked Integrated Circuits

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Enhancing the Seebeck effect in Ge/Si through the combination of interfacial design features

Scientific Reports ◽

10.1038/s41598-019-52654-z ◽

2019 ◽

Vol 9 (1) ◽

Cited By ~ 2

Author(s):

Andriy Nadtochiy ◽

Vasyl Kuryliuk ◽

Viktor Strelchuk ◽

Oleg Korotchenkov ◽

Pei-Wen Li ◽

...

Keyword(s):

Thin Film ◽

Quantum Dots ◽

Integrated Circuits ◽

Seebeck Coefficient ◽

Physical Properties ◽

Thermal Management ◽

Phonon Scattering ◽

Atomic Layer ◽

Epitaxial Films ◽

Seebeck Effect

Abstract Due to their inherent physical properties, thin-film Si/SiGe heterostructures have specific thermal management applications in advanced integrated circuits and this in turn is essential not only to prevent a high local temperature and overheat inside the circuit, but also generate electricity through the Seebeck effect. Here, we were able to enhance the Seebeck effect in the germanium composite quantum dots (CQDs) embedded in silicon by increasing the number of thin silicon layers inside the dot (multi-fold CQD material). The Seebeck effect in the CQD structures and multi-layer boron atomic layer-doped SiGe epitaxial films was studied experimentally at temperatures in the range from 50 to 300 K and detailed calculations for the Seebeck coefficient employing different scattering mechanisms were made. Our results show that the Seebeck coefficient is enhanced up to ≈40% in a 3-fold CQD material with respect to 2-fold Ge/Si CQDs. This enhancement was precisely modeled by taking into account the scattering of phonons by inner boundaries and the carrier filtering by the CQD inclusions. Our model is also able to reproduce the observed temperature dependence of the Seebeck coefficient in the B atomic layer-doped SiGe fairly well. We expect that the phonon scattering techniques developed here could significantly improve the thermoelectric performance of Ge/Si materials through further optimization of the layer stacks inside the quantum dot and of the dopant concentrations.

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Test Flow Selection for Stacked Integrated Circuits

Journal of Electronic Testing ◽

10.1007/s10836-019-05813-z ◽

2019 ◽

Vol 35 (4) ◽

pp. 425-440

Author(s):

Breeta SenGupta ◽

Dimitar Nikolov ◽

Assmitra Dash ◽

Erik Larsson

Keyword(s):

Integrated Circuits ◽

Test Flow ◽

Selection For ◽

Stacked Integrated Circuits

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Chip to System Levels Thermal Needs and Alternative Thermal Technologies for High Brightness LEDS

Journal of Electronic Packaging ◽

10.1115/1.2753958 ◽

2007 ◽

Vol 129 (3) ◽

pp. 328-338 ◽

Cited By ~ 30

Author(s):

Mehmet Arik ◽

Anant Setlur ◽

Stanton Weaver ◽

Deborah Haitko ◽

James Petroski

Keyword(s):

Integrated Circuits ◽

Thermal Management ◽

Heat Fluxes ◽

Electrical Currents ◽

System Architectures ◽

High Brightness ◽

Light Emitting ◽

Optical Extraction ◽

Address System ◽

Light Color

Light emitting diodes (LEDs) historically have been used for indicators and produced low amounts of heat. The introduction of high brightness LEDs with white light and monochromatic colors has allowed them to penetrate specialty and general illumination applications. The increased electrical currents used to drive the LEDs have resulted in higher heat fluxes than those for average silicon integrated circuits (i.e., ICs). This has created a need to focus more attention on the thermal management engineering of LED power packages. The output of a typical commercial high brightness, 1mm2, LED has exceeded 100lm at drive levels approaching 3W. This corresponds to a heat flux of up to 300W∕cm2. Novel thermal solutions need to address system architectures, packaging, phosphors for light color conversion, and encapsulants and fillers for optical extraction. In this paper, the effect of thermal management on packaging architectures, phosphors, encapsulants, and system design are discussed. Additionally, discussions of microscopic defects due to packaging problems as well as chip active layer defects are presented through experimental and computational findings.

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