Synthesis, characterization of ceria-coated silica particles and their chemical mechanical polishing performance on glass substrate

2010 ◽  
Vol 257 (5) ◽  
pp. 1750-1755 ◽  
Author(s):  
Zefang Zhang ◽  
Weili Liu ◽  
Jingkang Zhu ◽  
Zhitang Song
Keyword(s):  
Chemical Mechanical Polishing ◽  
Glass Substrate ◽  
Silica Particles ◽  
Mechanical Polishing

Characterization and Control of Copper CMP with Optoacoustic Metrology

2001 ◽  
Vol 671 ◽  
Author(s):  
Michael Gostein ◽  
Paul Lefevre ◽  
Alex A. Maznev ◽  
Michael Joffe
Keyword(s):  
Film Thickness ◽  
Spatial Resolution ◽  
Chemical Mechanical Polishing ◽  
High Spatial Resolution ◽  
Mechanical Polishing ◽  
Length Measurement ◽  
And Control ◽  
Non Destructive

ABSTRACTWe discuss applications of optoacoustic film thickness metrology for characterization of copper chemical-mechanical polishing (CMP). We highlight areas where the use of optoacoustics for CMP characterization provides data complementary to that obtained by other techniques because of its ability to directly measure film thickness with high spatial resolution in a rapid, non-destructive manner. Examples considered include determination of planarization length, measurement of film thickness at intermediate stages of polish, and measurement of arrays of metal lines.

Chemical Mechanical Polishing of Ge Using Colloidal Silica Particles and H2O2

2011 ◽  
Vol 14 (7) ◽  
pp. H254 ◽  
Author(s):  
Shivaji Peddeti ◽  
Patrick Ong ◽  
L. H. A. Leunissen ◽  
S. V. Babu
Keyword(s):  
Chemical Mechanical Polishing ◽  
Colloidal Silica ◽  
Silica Particles ◽  
Mechanical Polishing

High-Efficiency Chemical Mechanical Polishing of Ti-6Al-4V Alloy via the Synergistic Action of H2O2 and K+ Under Alkaline Conditions

2022 ◽  
Author(s):  
Changbang Deng ◽  
Liang Jiang ◽  
Linmao Qian
Keyword(s):  
Chemical Mechanical Polishing ◽  
High Efficiency ◽  
Removal Rate ◽  
Research Work ◽  
Silica Particles ◽  
Synergistic Action ◽  
Mechanical Polishing ◽  
Alloy Surface ◽  
Alkaline Conditions ◽  
Tc4 Alloy

Abstract Ti-6Al-4V (TC4) alloy has been widely used for implants, and excellent surface quality is required for satisfactory performance. In this study, chemical mechanical polishing (CMP) was introduced to process TC4 alloy. H2O2 and K+ were used to enhance the CMP efficiency. It is revealed that, at pH 10, the material removal rate (MRR) of TC4 alloy increases with the increasing H2O2. A synergistic action between H2O2 and K+ exists under alkaline conditions. With H2O2 and at pH 10, as the K+ concentration increases, the MRR of TC4 alloy first increases and then levels off. The anions have little influence on the CMP performance. After polishing, the surface is smooth without scratches, and the substrate underneath the surface film has no processing damage. For the synergistic action, K+ ions are adsorbed on the Stern layer of the TC4 alloy surface and the silica particles, screening the surface negative charge. Firstly, OOH- produced from H2O2 and OH- can approach the TC4 alloy surface easily, promoting the corrosion. Secondly, more silica particles come into contact with the TC4 alloy surface, enhancing the interactions. Therefore, the MRR increases. The research work brings about a promising high-efficiency CMP process for titanium alloys.

Frictional Characterization of Chemical–Mechanical Polishing Pad Surface and Diamond Conditioner Wear

2008 ◽  
Vol 47 (8) ◽  
pp. 6282-6287 ◽  
Author(s):  
Yohei Yamada ◽  
Masanori Kawakubo ◽  
Osamu Hirai ◽  
Nobuhiro Konishi ◽  
Syuhei Kurokawa ◽  
...  
Keyword(s):  
Chemical Mechanical Polishing ◽  
Mechanical Polishing ◽  
Polishing Pad ◽  
Diamond Conditioner
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