The effect of NaCl on room-temperature-processed indium oxide nanoparticle thin films for printed electronics

AbstractMolybdenum doped indium oxide (IMO) thin films rf sputtered at room temperature were studied as a function of oxygen volume percentage (O2 vol. %) varied between 0 and 17.5. The as-deposited films were amorphous irrespective of O2 vol. %. The minimum transmittance (<10 %) of the films deposited without oxygen has been increased on introducing oxygen (3.5 O2 vol. %) to a maximum of 90 %. The optical band gap has been increased from 3.80 eV (without oxygen) to 3.92 eV (3.5 O2 vol. %). The films were highly resistive and the hall coefficients were detectable only for the films deposited without oxygen. In order to increase the electrical conductivity, the films were annealed in the range 100-500°C in open-air and N2/H2 gas for 1 hour. The annealed films become polycrystalline with enhanced electrical and optical properties. The effect of annealing conditions on these films will be presented and discussed in detail.

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Electron glass effects in amorphous NbSi films

SciPost Physics ◽

10.21468/scipostphys.8.4.056 ◽

2020 ◽

Vol 8 (4) ◽

Author(s):

Julien Delahaye ◽

Thierry Grenet ◽

Claire A. Marrache-Kikuchi ◽

Vincent Humbert ◽

Laurent Bergé ◽

...

Keyword(s):

Thin Films ◽

Temperature Dependence ◽

Indium Oxide ◽

Gate Voltage ◽

Field Effect ◽

Room Temperature ◽

Discontinuous Systems ◽

Length Scales ◽

Fundamental Nature ◽

Logarithmic Growth

We report on non equilibrium field effect in insulating amorphous NbSi thin films having different Nb contents and thicknesses. The hallmark of an electron glass, namely the logarithmic growth of a memory dip in conductance versus gate voltage curves, is observed in all the films after a cooling from room temperature to 4.2~K. A very rich phenomenology is demonstrated. While the memory dip width is found to strongly vary with the film parameters, as was also observed in amorphous indium oxide films, screening lengths and temperature dependence of the dynamics are closer to what is observed in granular Al films. Our results demonstrate that the differentiation between continuous and discontinuous systems is not relevant to understand the discrepancies reported between various systems in the electron glass features. We suggest instead that they are not of fundamental nature and stem from differences in the protocols used and in the electrical inhomogeneity length scales within each material.

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Structural Evolution of Sputtered Indium Oxide Thin Films

Journal of Electrical Engineering ◽

10.2478/v10187-010-0059-7 ◽

2010 ◽

Vol 61 (6) ◽

pp. 382-385 ◽

Cited By ~ 7

Author(s):

Ivan Hotový ◽

Thomas Kups ◽

Juraj Hotový ◽

Jozef Liday ◽

Dalibor Búc ◽

...

Keyword(s):

Thin Films ◽

Indium Oxide ◽

Room Temperature ◽

Structural Evolution ◽

Nanocrystalline Structure ◽

Rhombohedral Phase ◽

Silicon Substrates ◽

Oxide Thin Films ◽

Reactive Mixture ◽

Post Deposition

Structural Evolution of Sputtered Indium Oxide Thin Films The indium oxide thin films were deposited at room temperature by reactive magnetron sputtering in the mixture of oxygen and argon on silicon and oxidized silicon substrates. The influence of the oxygen flow in the reactive mixture and post-deposition annealing on the structural properties were investigated. The as deposited In2O3 films showed a dominating randomly oriented nanocrystalline structure of cubic In2O3. The grain size decreased with increasing oxygen concentration in the plasma. Annealing in reducing atmospheres (vacuum, nitrogen and argon), besides improving the crystallinity, led to a partial cubic to rhombohedral phase transition in the indium oxide films.

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Effect of annealing on molybdenum doped indium oxide thin films RF sputtered at room temperature

Vacuum ◽

10.1016/j.vacuum.2008.03.005 ◽

2008 ◽

Vol 82 (12) ◽

pp. 1489-1494 ◽

Cited By ~ 7

Author(s):

E. Elangovan ◽

A. Marques ◽

A. Pimentel ◽

R. Martins ◽

E. Fortunato

Keyword(s):

Thin Films ◽

Indium Oxide ◽

Room Temperature ◽

Oxide Thin Films

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Some studies on Molybdenum doped Indium oxide thin films rf sputtered at room temperature

MRS Proceedings ◽

10.1557/proc-0928-gg12-03 ◽

2006 ◽

Vol 928 ◽

Cited By ~ 2

Author(s):

E. Elangovan ◽

P Barquinha ◽

A Pimental ◽

A. S. Viana ◽

R Martins ◽

...

Keyword(s):

Thin Films ◽

Absorption Coefficient ◽

Indium Oxide ◽

Room Temperature ◽

Optical Band Gap ◽

X Ray Diffraction ◽

Volume Percentage ◽

Transmittance Spectra ◽

X Ray ◽

Glass Substrates

ABSTRACTThin films of molybdenum doped indium oxide (IMO) were rf sputtered onto glass substrates at room temperature. The films were studied as a function of oxygen volume percentage (OVP) ranging 1.4 - 10.0 % in the sputtering chamber. The thickness of the films found varying between 180 and 260 nm. The X-ray diffraction pattern showed the films are polycrystalline with the peaks corresponding to (222) and (400) planes and one among them showing as a preferential orientation. It is observed that the preferred orientation changes from (222) plane to (400) as the OVP increases from 1.4 to 10.0 %. The transmittance spectra were found to be in the range of 77 to 89 %. The optical band gap calculated from the absorption coefficient of transmittance spectra was around 3.9 eV. The negative sign of Hall coefficient confirmed the films were n-type conducting. The bulk resistivity increased from 2.26 × 10−3 to 4.08 × 10−1 Ω−cm for the increase in OVP from 1.4 to 4.1 %, and thereafter increased dramatically so as the Hall coefficients were not detectable. From the AFM morphologies it is evaluated that the RMS roughness of the films ranges from 0.9 to 3.2 nm.

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