scholarly journals Morphological and Structural Properties of Porous Silicon (PSi)

2019 ◽  
Vol 81 ◽  
pp. 11-17 ◽  
Author(s):  
Ayad Jumaah Kadhim ◽  
Muneer H. Jaduaa Alzubaidy ◽  
Ahmed N. Abd
Keyword(s):  
Renewable Energy ◽  
Porous Silicon ◽  
Structural Properties ◽  
Electrochemical Method ◽  
Etching Time ◽  
Nanocrystalline Structures ◽  
P Type ◽  
And Control ◽  
Production Conditions

This study includes the effect of the etching time on the morphology of the surfaces produced using the electrochemical method of silicon ( p-type), where it was found that the etching leads to increase the porosity layer of silicon. The production of nanocrystalline structures and control of their production conditions is the first step to control the properties of the devices. These are very important applications for the etching of renewable energy.

Electroluminescence and Photoluminescence Properties of Porous Silicon Nanostructures with Optimum Current Density of Photo-Electrochemical Anodisation

2013 ◽  
Vol 667 ◽  
pp. 180-185
Author(s):  
M. Ain Zubaidah ◽  
F.S. Husairi ◽  
S.F.M. Yusop ◽  
Noor Asli Asnida ◽  
Mohamad Rusop ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Volume Ratio ◽  
Boron Doping ◽  
Peak Position ◽  
Silicon Nanostructures ◽  
Etching Time ◽  
Photoluminescence Properties ◽  
Current Densities ◽  
Pl Spectrum ◽  
P Type

P-type silicon wafer ( orientation; boron doping; 0.75 ~ 10 Ω cm-1) was used to prepare samples of porous silicon nanostructures (PSiNs). All samples have been prepared by using photo-electrochemical anodisation. A fixed etching time of 30 minutes and volume ratio of electrolyte, hydrofluoric acid 48% (HF48%) and absolute ethanol (C2H5OH), 1:1 were used for various current densities, J. There were sample A (J=10 mA/cm2), sample B (J=20 mA/cm2), sample C (J=30 mA/cm2), sample D (J=40 mA/cm2) and sample E (J=50 mA/cm2). Photoluminescence (PL) and electroluminescence (EL) spectra were investigated. Maximum peak position of PL spectrum at about ~675 nm, while the maximum EL spectrum at about ~650 nm (which is similar to the PL spectrum).

Effect of etching time on structure of p-type porous silicon

2018 ◽  
Vol 461 ◽  
pp. 44-47 ◽  
Author(s):  
Martin Kopani ◽  
Milan Mikula ◽  
Daniel Kosnac ◽  
Pavol Vojtek ◽  
Jan Gregus ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Etching Time ◽  
P Type

Influence of Etching Time on Surface Structural Properties of p- and n- Type Porous Silicon Nanostructures by Photo-Electrochemical Anodic Etching

2012 ◽  
Vol 576 ◽  
pp. 511-515
Author(s):  
N.A. Asli ◽  
Maslihan Ain Zubaidah ◽  
S.F.M. Yusop ◽  
Khairunnadim Ahmad Sekak ◽  
Mohammad Rusop ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Crystalline Silicon ◽  
Surface Characteristic ◽  
Electrochemical Anodization ◽  
Silicon Nanostructures ◽  
Etching Time ◽  
Force Microscopy ◽  
Etching Parameters ◽  
P Type ◽  
Substrate Doping

Porous silicon nanostructures (PSiN) are nanoporous materials which consist of uniform network of interconnected pore. The structure of PSiN is depending on etching parameters, including current density, HF electrolyte concentration, substrate doping type and level. In this work, the results of a structural p-type and n-type of porous silicon nanostructures were investigated by Field Emission Scanning Electron Microscopy (FESEM) and Atomic Force Microscopy (AFM) is reported. Samples were prepared by photo-electrochemical anodization of p- and n-type crystalline silicon in HF electrolyte at different etching time. The surface morphology of PSiN was studied by FESEM with same magnification shown n-type surface form crack faster than p-type of PSiN. While the topography and roughness of PSiN was characterize by AFM. From topography shown the different etching time for both type PSiN produce different porosity and roughness respectively. There is good agreement between p- and n-type have different in terms of surface characteristic.

scholarly journals Peculiarities of Photoluminescence in Porous Silicon Prepared by Metal-Assisted Chemical Etching

ISRN Optics ◽  
2012 ◽  
Vol 2012 ◽  
pp. 1-6 ◽  
Author(s):  
Igor Iatsunskyi ◽  
Valentin Smyntyna ◽  
Nykolai Pavlenko ◽  
Olga Sviridova
Keyword(s):  
Porous Silicon ◽  
Chemical Etching ◽  
Etching Time ◽  
Force Microscopy ◽  
Porous Layers ◽  
Atomic Force ◽  
Silicon Nanostructure ◽  
Metal Assisted Chemical Etching ◽  
Concentrated Solution ◽  
P Type

Photoluminescent (PL) porous layers were formed on p-type silicon by a metal-assisted chemical etching method using H2O2 as an oxidizing agent. Silver particles were deposited on the (100) Si surface prior to immersion in a solution of HF and H2O2. The morphology of the porous silicon (PS) layer formed by this method was investigated by atomic force microscopy (AFM). Depending on the metal-assisted chemical etching conditions, the macro- or microporous structures could be formed. Luminescence from metal-assisted chemically etched layers was measured. It was found that the PL intensity increases with increasing etching time. This behaviour is attributed to increase of the density of the silicon nanostructure. It was found the shift of PL peak to a green region with increasing of deposition time can be attributed to the change in porous morphology. Finally, the PL spectra of samples formed by high concentrated solution of AgNO3 showed two narrow peaks of emission at 520 and 550 nm. These peaks can be attributed to formation of AgF and AgF2 on a silicon surface.

Effect of Electrolyte Volume Ratio on Electroluminescence of Porous Silicon Nanostructures (PSiNs) Intensity

2013 ◽  
Vol 686 ◽  
pp. 49-55
Author(s):  
M. Ain Zubaidah ◽  
N.A. Asli ◽  
Mohamad Rusop ◽  
Saifollah Abdullah
Keyword(s):  
Porous Silicon ◽  
Light Emission ◽  
Light Emitting Diode ◽  
Volume Ratio ◽  
Visible Range ◽  
Silicon Nanostructures ◽  
Etching Time ◽  
Light Emitting ◽  
Flat Screen ◽  
P Type

For this experiment, the main purpose of this experiment is to determine the electroluminescence of PSiNs samples with optimum electrolyte volume ratio of photo-electrochemical anodisation. PSiNs samples were prepared by photo-electrochemical anodisation by using p-type silicon substrate. For the formation of PSiNs on the silicon surface, a fixed current density (J=20 mA/cm2) and 30 minutes etching time were applied for the various electrolyte volume ratio. Volume ratio of hydrofluoric acid 48% (HF48%) and absolute ethanol (C2H5OH), HF48%:C2H5OH was used for sample A (3:1), sample B (2:1), sample C (1:1), sample D (1:2) and sample E (1:3). The light emission can be observed at visible range. The effective electroluminescence was observed for sample C. Porous silicon nanostructures light–emitting diode (PSiNs-LED) has high-potential device for future flat screen display and can be high in demand.

Influence of Electrochemical Etching Parameters on Morphology of Porous Silicon

2014 ◽  
Vol 1055 ◽  
pp. 68-72 ◽  
Author(s):  
Lan Liu ◽  
Yan Xue ◽  
Xiao Ming Ren ◽  
Rui Zhen Xie
Keyword(s):  
Porous Silicon ◽  
Specific Surface ◽  
Surface Area ◽  
Specific Surface Area ◽  
High Speed ◽  
Electrochemical Etching ◽  
Etching Time ◽  
Adsorption Surface ◽  
Etching Parameters ◽  
And Control

In order to protect porous silicon from break and enhance it’s porosity and specific surface area, porous silicon is prepared with electrochemical etching method. The charateristic of porous silicon is investigated with SEM and high-speed adsorption surface area and porosity analyzer. The results show that the porous silicon prepared with the method of gradient etching and control of etching time is mechanically stable. The porosity and specfic surface area are improved.

On Similar Electrical, Optical and Structural Properties of MOS Structures Prepared on a-Si:H/c-Si, Porous Silicon/c-Si, and c-Si

2009 ◽  
Vol 609 ◽  
pp. 11-25
Author(s):  
Emil Pinčík ◽  
Hikaru Kobayashi ◽  
Róbert Brunner ◽  
Masao Takahashi ◽  
Jaroslav Rusnák ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Structural Properties ◽  
Deep Level ◽  
Grazing Incidence ◽  
Flat Band ◽  
Light Illumination ◽  
Transient Spectroscopy ◽  
P Type ◽  
Silicon Based ◽  
Mos Structures

The paper presents results of research of similar electrical, optical and structural properties of three types of MOS structures prepared on different Si-based semiconductors. Electrical interface properties are investigated by institutionally produced equipment with Charge Version of Deep Level Transient Spectroscopy and time domain C-V. X-ray diffraction at grazing incidence angles is applied to control their structural properties. Optical properties of selected structures are investigated by photoluminescence measurements at liquid helium temperature (approx. 6K in cryostat). Dominant interest is focused on analysis of both electrical properties of MOS porous silicon based structures prepared on p-type crystalline Si and photoluminescence signals of the structures observed around 1.1 eV, respectively. Such parameters as Fermi level position, flat-band voltage, surface potential, position of deep level hole traps, and acceptor density are calculated for various conditions as defined by sample ambient, temperature, and light illumination. Following two main findings are analyzed: i) total suppression of large C-V hysteresis due to suitable illumination and ii) recovering of part of detected interface states in the dark.

scholarly journals Optical Properties of Porous Silicon Solar Cells for Use in Transport

2019 ◽  
Vol 21 (3) ◽  
pp. 53-58
Author(s):  
Martin Kralik ◽  
Michaela Hola ◽  
Stanislav Jurecka
Keyword(s):  
Solar Cells ◽  
Porous Silicon ◽  
Spectral Reflectance ◽  
High Efficiency ◽  
Electrochemical Etching ◽  
Electrical Potential ◽  
Etching Time ◽  
Si Substrate ◽  
Etching Parameters ◽  
P Type

Porous silicon (pSi) samples were prepared by electrochemical etching of p-type silicon (p-type Si) substrate. Three pSi samples with different parameters of electrochemical etching (electrical potential, etching time, etching current) were prepared and analyzed. We studied the influence of electrochemical etching parameters on spectral reflectance of pSi structure. A modification of interference pattern was observed due to changes of microstructure. We determined the thickness of pSi layers from spectral reflectance. Solar cells with a porous structure achieve high efficiency and long life. These solar cells are predestined for use in transport.

scholarly journals Effect of Etching Time on Optical and Thermal Properties of p-Type Porous Silicon Prepared by Electrical Anodisation Method

2012 ◽  
Vol 2012 ◽  
pp. 1-9 ◽  
Author(s):  
Kasra Behzad ◽  
Wan Mahmood Mat Yunus ◽  
Zainal Abidin Talib ◽  
Azmi Zakaria ◽  
Afarin Bahrami ◽  
...  
Keyword(s):  
Thermal Properties ◽  
Thermal Diffusivity ◽  
Porous Silicon ◽  
Band Gap ◽  
Photoacoustic Spectroscopy ◽  
Gravimetric Method ◽  
Etching Time ◽  
Silicon Substrates ◽  
P Type ◽  
Si Wafer

The porous silicon (PSi) layers were formed on p-type silicon (Si) wafer. The six samples were anodised electrically with 30 mA/cm2 fixed current density for different etching times. The structural, optical, and thermal properties of porous silicon on silicon substrates were investigated by photoluminescence (PL), photoacoustic spectroscopy (PAS), and UV-Vis-NIR spectrophotometer. The thickness and porosity of the layers were measured using the gravimetric method. The band gap of the samples was measured through the photoluminescence (PL) peak and absorption spectra, then they were compared. It shows that band gap value increases by raising the porosity. Photoacoustic spectroscopy (PAS) was carried out for measuring the thermal diffusivity (TD) of the samples.

Sign in / Sign up

Export Citation Format

Share Document