Effect of cobalt addition to Si–Cr solvent in top-seeded solution growth

2020 ◽  
Vol 513 ◽  
pp. 145798
Author(s):  
Koangyong Hyun ◽  
Seong-Jong Kim ◽  
Toshinori Taishi
Author(s):  
Shijia Sun ◽  
Qi Wei ◽  
Bing-Xuan Li ◽  
Xingjun Shi ◽  
feifei yuan ◽  
...  

The pure and Nd3+-doped YMgB5O10 (YMB, Nd:YMB) crystals were grown successfully by the top-seeded solution growth method with composite fluxes Li2O-B2O3-LiF. The systematic investigation of crystal structure, transmission spectrum, band...


1986 ◽  
Vol 78 (3) ◽  
pp. 567-570 ◽  
Author(s):  
T. Inoue ◽  
H. Komatsu ◽  
M. Shimizu ◽  
S. Tsunekawa ◽  
H. Takei

2018 ◽  
Vol 215 (20) ◽  
pp. 1870045
Author(s):  
Minh-Tan Ha ◽  
Yun-Ji Shin ◽  
Myung-Hyun Lee ◽  
Cheol-Jin Kim ◽  
Seong-Min Jeong

2017 ◽  
Vol 47 (11) ◽  
pp. 1126-1138
Author(s):  
Chao HE ◽  
ZuJian WANG ◽  
XiaoMing YANG ◽  
XiFa LONG

2015 ◽  
Vol 821-823 ◽  
pp. 31-34 ◽  
Author(s):  
Tomonori Umezaki ◽  
Daiki Koike ◽  
S. Harada ◽  
Toru Ujihara

The solution growth of SiC on an off-axis seed is effective on the reduction of threading dislocations. We proposed a novel method to grow a SiC crystal on an off-axis seed by top-seeded solution growth (TSSG). In our previous study, a unidirectional solution flow above a seed crystal is effective to suppress surface roughness in the growth on the off-axis seed. However, it is difficult to apply the unidirectional flow in an axisymmetric TSSG set-up. In this study, the unidirectional flow could be achieved by shifting the rotational axis away from the center of the seed crystal. As a result, the smooth surface was obtained in the wider area where the solution flow direction was opposite to the step-flow direction.


CrystEngComm ◽  
2016 ◽  
Vol 18 (12) ◽  
pp. 2081-2088 ◽  
Author(s):  
Hairui Liu ◽  
Philippe Veber ◽  
Jurij Koruza ◽  
Daniel Rytz ◽  
Michael Josse ◽  
...  

A series of centimeter-sized lead-free piezoelectric Li+- and Ta5+-modified (Na,K)NbO3 single crystals with an ABO3 perovskite structure was successfully grown by the top-seeded solution growth method.


2002 ◽  
Vol 237-239 ◽  
pp. 778-782 ◽  
Author(s):  
C.T. Lin ◽  
B. Liang ◽  
H.C. Chen

2013 ◽  
Vol 740-742 ◽  
pp. 65-68 ◽  
Author(s):  
Kazuhiko Kusunoki ◽  
N. Yashiro ◽  
Nobuhiro Okada ◽  
Kouji Moriguchi ◽  
Kazuhito Kamei ◽  
...  

4H-SiC single crystal with 3-inch diameter was grown by top seeded solution growth (TSSG) technique. We used a new convection control member called “Immersion Guide (IG)” which causes the high and homogenous fluid flow in the solution. As a result, we achieved relatively high growth rate and morphological stability


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