scholarly journals Effect of the stray field of Fe/Fe3O4 nanoparticles on the surface of the CoFeB thin films

2020 ◽  
Vol 527 ◽  
pp. 146836
Author(s):  
R.B. Morgunov ◽  
O.V. Koplak ◽  
R.S. Allayarov ◽  
E.I. Kunitsyna ◽  
S. Mangin
2020 ◽  
Vol 131 (4) ◽  
pp. 607-617
Author(s):  
O. V. Koplak ◽  
E. I. Kunitsyna ◽  
R. S. Allayarov ◽  
S. Mangin ◽  
N. V. Granovskii ◽  
...  

ACS Sensors ◽  
2021 ◽  
Author(s):  
Ekaterina I. Kunitsyna ◽  
Ruslan S. Allayarov ◽  
Oksana V. Koplak ◽  
Roman B. Morgunov ◽  
Stephane Mangin

Nanomaterials ◽  
2021 ◽  
Vol 11 (2) ◽  
pp. 348
Author(s):  
Roland Sachser ◽  
Johanna Hütner ◽  
Christian H. Schwalb ◽  
Michael Huth

Scanning Hall probe microscopy is attractive for minimally invasive characterization of magnetic thin films and nanostructures by measurement of the emanating magnetic stray field. Established sensor probes operating at room temperature employ highly miniaturized spin-valve elements or semimetals, such as Bi. As the sensor layer structures are fabricated by patterning of planar thin films, their adaption to custom-made sensor probe geometries is highly challenging or impossible. Here we show how nanogranular ferromagnetic Hall devices fabricated by the direct-write method of focused electron beam induced deposition (FEBID) can be tailor-made for any given probe geometry. Furthermore, we demonstrate how the magnetic stray field sensitivity can be optimized in situ directly after direct-write nanofabrication of the sensor element. First proof-of-principle results on the use of this novel scanning Hall sensor are shown.


2002 ◽  
Vol 242-245 ◽  
pp. 1097-1099 ◽  
Author(s):  
M.K. Krause ◽  
P. Esquinazi ◽  
M. Ziese ◽  
R. Höhne ◽  
A. Pan ◽  
...  

2018 ◽  
Vol 915 ◽  
pp. 16-21 ◽  
Author(s):  
Mehmet Kuru ◽  
Erhan Ongun ◽  
Asım Özmeti̇n ◽  
Mehmet Hançer ◽  
Ali Esad Özmeti̇n

Fabrication of hard magnetic thin films is a key issue on the development of new micro electro mechanical systems. As the magnetically hard SmCo thin-films offer excellent intrinsic magnetic properties, such as moderate saturation magnetization, large magnetic anisotropy, and high Curie temperature, they are considered as a promising candidate to be used for novel MEMS applications. In this work, SmCo5 thin films with Cu underlayer were grown onto Si (100) substrate at room temperature by RF magnetron sputtering technique. The samples were annealed at 400 ̊C and 500 ̊C under Ar atmosphere condition. Microstructural and magnetic properties of sputtered SmCo5 thin films were investigated by a number of advanced characterization tools and techniques. Phase composition of SmCo5 thin films was analyzed by grazing incident X-ray diffraction (GIXRD) with Cu-Kα radiation. Surface morphology was investigated by scanning electron microscopy (SEM) and atomic force microscopy (AFM) techniques. Magnetic force microscopy (MFM) technique was used to take stray-field images of SmCo5 thin films, and finally magnetic properties were investigated to explain the coercivity of SmCo5 thin films using superconducting quantum interference device (SQUID) as a magnetometer.


2011 ◽  
Vol 471 (17-18) ◽  
pp. 515-519 ◽  
Author(s):  
Li Chen ◽  
Chen-Fong Tsai ◽  
Yuanyuan Zhu ◽  
Zhenxing Bi ◽  
Haiyan Wang

Author(s):  
L.J. Chen ◽  
Y.F. Hsieh

One measure of the maturity of a device technology is the ease and reliability of applying contact metallurgy. Compared to metal contact of silicon, the status of GaAs metallization is still at its primitive stage. With the advent of GaAs MESFET and integrated circuits, very stringent requirements were placed on their metal contacts. During the past few years, extensive researches have been conducted in the area of Au-Ge-Ni in order to lower contact resistances and improve uniformity. In this paper, we report the results of TEM study of interfacial reactions between Ni and GaAs as part of the attempt to understand the role of nickel in Au-Ge-Ni contact of GaAs.N-type, Si-doped, (001) oriented GaAs wafers, 15 mil in thickness, were grown by gradient-freeze method. Nickel thin films, 300Å in thickness, were e-gun deposited on GaAs wafers. The samples were then annealed in dry N2 in a 3-zone diffusion furnace at temperatures 200°C - 600°C for 5-180 minutes. Thin foils for TEM examinations were prepared by chemical polishing from the GaA.s side. TEM investigations were performed with JE0L- 100B and JE0L-200CX electron microscopes.


Author(s):  
R. C. Moretz ◽  
G. G. Hausner ◽  
D. F. Parsons

Use of the electron microscope to examine wet objects is possible due to the small mass thickness of the equilibrium pressure of water vapor at room temperature. Previous attempts to examine hydrated biological objects and water itself used a chamber consisting of two small apertures sealed by two thin films. Extensive work in our laboratory showed that such films have an 80% failure rate when wet. Using the principle of differential pumping of the microscope column, we can use open apertures in place of thin film windows.Fig. 1 shows the modified Siemens la specimen chamber with the connections to the water supply and the auxiliary pumping station. A mechanical pump is connected to the vapor supply via a 100μ aperture to maintain steady-state conditions.


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