Fabrication and Characterization of Permanent Magnetic SmCo5 Thin Films by SQUID Magnetometer

2018 ◽  
Vol 915 ◽  
pp. 16-21 ◽  
Author(s):  
Mehmet Kuru ◽  
Erhan Ongun ◽  
Asım Özmeti̇n ◽  
Mehmet Hançer ◽  
Ali Esad Özmeti̇n

Fabrication of hard magnetic thin films is a key issue on the development of new micro electro mechanical systems. As the magnetically hard SmCo thin-films offer excellent intrinsic magnetic properties, such as moderate saturation magnetization, large magnetic anisotropy, and high Curie temperature, they are considered as a promising candidate to be used for novel MEMS applications. In this work, SmCo5 thin films with Cu underlayer were grown onto Si (100) substrate at room temperature by RF magnetron sputtering technique. The samples were annealed at 400 ̊C and 500 ̊C under Ar atmosphere condition. Microstructural and magnetic properties of sputtered SmCo5 thin films were investigated by a number of advanced characterization tools and techniques. Phase composition of SmCo5 thin films was analyzed by grazing incident X-ray diffraction (GIXRD) with Cu-Kα radiation. Surface morphology was investigated by scanning electron microscopy (SEM) and atomic force microscopy (AFM) techniques. Magnetic force microscopy (MFM) technique was used to take stray-field images of SmCo5 thin films, and finally magnetic properties were investigated to explain the coercivity of SmCo5 thin films using superconducting quantum interference device (SQUID) as a magnetometer.

2015 ◽  
Vol 2015 ◽  
pp. 1-5 ◽  
Author(s):  
Gui-fang Li ◽  
Shibin Liu ◽  
Shanglin Yang ◽  
Yongqian Du

We prepared magnetic thin films Ni81Fe19on single-crystal Si(001) substrates via single graphene layer through magnetron sputtering for Ni81Fe19and chemical vapor deposition for graphene. Structural investigation showed that crystal quality of Ni81Fe19thin films was significantly improved with insertion of graphene layer compared with that directly grown on Si(001) substrate. Furthermore, saturation magnetization of Ni81Fe19/graphene/Si(001) heterostructure increased to 477 emu/cm3with annealing temperatureTa=400°C, which is much higher than values of Ni81Fe19/Si(001) heterostructures withTaranging from 200°C to 400°C.


2014 ◽  
Vol 28 (06) ◽  
pp. 1450043 ◽  
Author(s):  
Shuyun Wang ◽  
Yuanmei Gao ◽  
Tiejun Gao ◽  
Yuan He ◽  
Hui Zhang ◽  
...  

A series of Ta (4 nm)/ ZnO (t nm )/ Ni 81 Fe 19 (20 nm)/ ZnO (t nm )/ Ta (3 nm) magnetic thin films were prepared on lower experimental conditions by magnetron sputtering method. Effects of ZnO layer thickness and substrate temperature on anisotropic magnetoresistance and magnetic properties of these Ni 81 Fe 19 films have been investigated. The experiment results show that the anisotropic magnetoresistance value of the Ni 81 Fe 19 film is enhanced with the increasing of the inserted ZnO layer thickness. When the ZnO thickness is 2 nm, the anisotropic magnetoresistance value achieves the maximum. In addition, the anisotropic magnetoresistance of the Ni 81 Fe 19 film is also enhanced with the increasing of substrate temperature, and when the temperature is 450°C, the anisotropic magnetoresistance reaches the maximum. The anisotropic magnetoresistance value of 20 nm Ni 81 Fe 19 films with 2 nm ZnO layer can achieve 3.63% at 450°C which is enhanced 11.6% compare with the films without ZnO layer.


2012 ◽  
Vol 365 ◽  
pp. 012003 ◽  
Author(s):  
Marco Coïsson ◽  
Gabriele Barrera ◽  
Federica Celegato ◽  
Paola Tiberto ◽  
Franco Vinai

2015 ◽  
Vol 1117 ◽  
pp. 139-142 ◽  
Author(s):  
Marius Dobromir ◽  
Radu Paul Apetrei ◽  
A.V. Rogachev ◽  
Dmitry L. Kovalenko ◽  
Dumitru Luca

Amorphous Nb-doped TiO2 thin films were deposited on (100) Si and glass substrates at room temperature by RF magnetron sputtering and a mosaic-type Nb2O5-TiO2 sputtering target. To adjust the amount of the niobium dopant in the film samples, appropriate numbers of Nb2O5 pellets were placed on the circular area of the magnetron target with intensive sputtering. By adjusting the discharge conditions and the number of niobium oxide pellets, films with dopant content varying between 0 and 16.2 at.% were prepared, as demonstrated by X-ray photoelectron spectroscopy data. The X-ray diffraction patterns of the as-deposited samples showed the lack of crystalline ordering in the samples. Surfaces roughness and energy band gap values increase with dopant concentration, as showed by atomic force microscopy and UV-Vis spectroscopy measurements.


2002 ◽  
Vol 91 (10) ◽  
pp. 8462 ◽  
Author(s):  
Y. M. Kim ◽  
S. H. Han ◽  
H. J. Kim ◽  
D. Choi ◽  
K. H. Kim ◽  
...  

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