Critical role of top interface layer on the bipolar resistive switching of Al/PEDOT:PSS/Al memory device

2011 ◽  
Vol 11 (2) ◽  
pp. e35-e39 ◽  
Author(s):  
Jong Yun Kim ◽  
Hu Young Jeong ◽  
Jeong Won Kim ◽  
Tae Hyun Yoon ◽  
Sung-Yool Choi
Keyword(s):  
Resistive Switching ◽  
Critical Role ◽  
Memory Device ◽  
Interface Layer ◽  
Bipolar Resistive Switching

scholarly journals Improved Stability and Controllability in ZrN-Based Resistive Memory Device by Inserting TiO2 Layer

Micromachines ◽  
2020 ◽  
Vol 11 (10) ◽  
pp. 905
Author(s):  
Junhyeok Choi ◽  
Sungjun Kim
Keyword(s):  
Data Storage ◽  
Resistive Switching ◽  
Memory Device ◽  
Comparison Study ◽  
Tio2 Layer ◽  
Bipolar Resistive Switching ◽  
Resistive Switching Memory ◽  
Current Voltage ◽  
Improved Stability ◽  
Switching Characteristics

In this work, the enhanced resistive switching of ZrN-based resistive switching memory is demonstrated by embedding TiO2 layer between Ag top electrode and ZrN switching layer. The Ag/ZrN/n-Si device exhibits unstable resistive switching as a result of the uncontrollable Ag migration. Both unipolar and bipolar resistive switching with high RESET current were observed. Negative-SET behavior in the Ag/ZrN/n-Si device makes set-stuck, causing permanent resistive switching failure. On the other hand, the analogue switching in the Ag/TiO2/ZrN/n-Si device, which could be adopted for the multi-bit data storage applications, is obtained. The gradual switching in Ag/TiO2/ZrN/n-Si device is achieved, possibly due to the suppressed Ag diffusion caused by TiO2 inserting layer. The current–voltage (I–V) switching characteristics of Ag/ZrN/n-Si and Ag/TiO2/ZrN/n-Si devices can be well verified by pulse transient. Finally, we established that the Ag/TiO2/ZrN/n-Si device is suitable for neuromorphic application through a comparison study of conductance update. This paper paves the way for neuromorphic application in nitride-based memristor devices.

Role of highly doped Si substrate in bipolar resistive switching of silicon nitride MIS-capacitors

2018 ◽  
Vol 187-188 ◽  
pp. 134-138 ◽  
Author(s):  
S.V. Tikhov ◽  
A.N. Mikhaylov ◽  
A.I. Belov ◽  
D.S. Korolev ◽  
I.N. Antonov ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Resistive Switching ◽  
Si Substrate ◽  
Bipolar Resistive Switching ◽  
Mis Capacitors

scholarly journals Role of interfacial layer on complementary resistive switching in the TiN/HfOx/TiN resistive memory device

2014 ◽  
Vol 105 (22) ◽  
pp. 222106 ◽  
Author(s):  
H. Z. Zhang ◽  
D. S. Ang ◽  
C. J. Gu ◽  
K. S. Yew ◽  
X. P. Wang ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Interfacial Layer ◽  
Memory Device ◽  
Resistive Memory

scholarly journals Chemical Nature of Electrode and the Switching Response of RF-Sputtered NbOx Films

Nanomaterials ◽  
2020 ◽  
Vol 10 (11) ◽  
pp. 2164
Author(s):  
Jamal Aziz ◽  
Honggyun Kim ◽  
Shania Rehman ◽  
Muhammad Farooq Khan ◽  
Deok-kee Kim
Keyword(s):  
Resistive Switching ◽  
Photoelectron Spectroscopy ◽  
Dominant Role ◽  
Interface Layer ◽  
Spectroscopy Analysis ◽  
X Ray ◽  
Inert Electrode ◽  
Switching Characteristics ◽  
Different Characteristics

In this study, the dominant role of the top electrode is presented for Nb2O5-based devices to demonstrate either the resistive switching or threshold characteristics. These Nb2O5-based devices may exhibit different characteristics depending on the selection of electrode. The use of the inert electrode (Au) initiates resistive switching characteristics in the Au/Nb2O5/Pt device. Alternatively, threshold characteristics are induced by using reactive electrodes (W and Nb). The X-ray photoelectron spectroscopy analysis confirms the presence of oxide layers of WOy and NbOx at interfaces for W and Nb as top electrodes. However, no interface layer between the top electrode and active layer is detected in X-ray photoelectron spectroscopy for Au as the top electrode. Moreover, the dominant phase is Nb2O5 for Au and NbO2 for W and Nb. The threshold characteristics are attributed to the reduction of Nb2O5 phase to NbO2 due to the interfacial oxide layer formation between the reactive top electrode and Nb2O5. Additionally, reliability tests for both resistive switching and threshold characteristics are also performed to confirm switching stabilities.

Eliminating failure behavior by introducing CdS inter-layer in Cu2O-based memory cell

2018 ◽  
Vol 81 (2) ◽  
pp. 20101 ◽  
Author(s):  
Weijie Duan ◽  
Zhenxing Liu ◽  
Yang Zhang
Keyword(s):  
Resistive Switching ◽  
Random Access ◽  
Memory Cell ◽  
Memory Device ◽  
Failure Behavior ◽  
Access Memory ◽  
Bipolar Resistive Switching ◽  
Non Volatile Memory ◽  
Switching Characteristics ◽  
High Set

Resistive switching random access memory (RRAM) has attracted great attention due to its outstanding performance for the next generation non-volatile memory. However, the unexpected failure behaviors seriously hinder the further studies and applications of this new memory device. In this work, the bipolar resistive switching characteristics in Pt/CdS/Cu2O/FTO cells are investigated. The CdS inter-layer is used to suppress the failure behavior in set process. Comparing to the Pt/Cu2O/FTO cell, the switching process in Pt/CdS/Cu2O/FTO cell is not affected even at a high set voltage and the failure behavior is eliminated effectively. Therefore, this work proposes a feasible approach to solve the failure problem in RRAM.

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