Role of highly doped Si substrate in bipolar resistive switching of silicon nitride MIS-capacitors

We demonstrate that a bipolar non-volatile resistive switching behaviour with negative differential resistance (NDR) effect is realized in a Cu/BaTiO3/Ag device, which was deposited on a Si substrate via magnetron sputtering equipment.

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Bipolar Resistive Switching Characteristic of Epitaxial NiO Thin Film on Nb-Doped Substrate

Advances in Condensed Matter Physics ◽

10.1155/2012/364376 ◽

2012 ◽

Vol 2012 ◽

pp. 1-8 ◽

Cited By ~ 11

Author(s):

Yongdan Zhu ◽

Meiya Li

Keyword(s):

Resistive Switching ◽

Depletion Region ◽

Carrier Injection ◽

Forming Process ◽

Reverse Voltage ◽

Forward Voltage ◽

Switching Characteristic ◽

Bipolar Resistive Switching ◽

Nio Thin Film

Epitaxial NiO film was grown on 0.7% Nb-doped substrates by pulsed laser deposition. TheI-Vcharacteristics of Ag/NiO/Nb-/In device show reproducible and pronounced bipolar resistive switching without forming process which was induced by the NiO/Nb- junctions, and the resistive switching ratio can reach 103at the read voltage of −0.5 V. Furthermore, the resistance states can be controlled by changing the max forward voltage, reverse voltage, or compliance current, indicating multilevel memories. These results were discussed by considering the role of carrier injection trapped/detrapped at the interfacial depletion region of the heterojunction.

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Effects of Annealing Temperature on Resistance Switching Properties of ZnMn2O4 Films Deposited by Magnetron Sputtering

Applied Mechanics and Materials ◽

10.4028/www.scientific.net/amm.778.88 ◽

2015 ◽

Vol 778 ◽

pp. 88-91

Author(s):

Hua Wang ◽

Zhi Da Li ◽

Ji Wen Xu ◽

Yu Pei Zhang ◽

Ling Yang

Keyword(s):

Magnetron Sputtering ◽

Resistive Switching ◽

Spinel Structure ◽

Annealing Temperature ◽

Resistance Switching ◽

Switching Behavior ◽

Si Substrate ◽

Resistive Switching Behavior ◽

Bipolar Resistive Switching

ZnMn2O4films were fabricated on p-Si substrate by magnetron sputtering. The effects of annealing temperature on microstructure, resistance switching properties and endurance characteristics of ZnMn2O4films were investigated. The ZnMn2O4films with a structure of Ag/ZnMn2O4/p-Si exhibit bipolar resistive switching behavior. The results indicated that the annealing temperature has not changed its spinel structure, the bipolar resistance behavior and endurance characteristics, but the grain become more and more large, arranged closed and distributed evenly with the increase of annealing temperature from 450°C to 750°C. The ZnMn2O4films annealed at 600°C have the biggestRHRS/RLRSratio, the lowestVONandVOFF. TheRHRS/RLRSratios of all specimens maintain at about 103after successive 1000 switching cycles, which indicated that the Ag/ZnMn2O4/p-Si device has better endurance characteristics.

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High endurance of bipolar resistive switching in a Pt/LaNiO3/Nb:SrZrO3/Cu stack: The role of Cu modulating layer

Chemical Physics Letters ◽

10.1016/j.cplett.2019.137040 ◽

2020 ◽

Vol 739 ◽

pp. 137040

Author(s):

F. Shao ◽

Z.L. Lv ◽

Z.Y. Ren ◽

L.P. Zhang ◽

G.L. Zhao ◽

...

Keyword(s):

Resistive Switching ◽

Bipolar Resistive Switching

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Bipolar resistive switching property of Si3N4−x thin films depending on N deficiency

Journal of Materials Chemistry C ◽

10.1039/c9tc05336k ◽

2020 ◽

Vol 8 (5) ◽

pp. 1755-1761 ◽

Cited By ~ 1

Author(s):

Dae Eun Kwon ◽

Yumin Kim ◽

Hae Jin Kim ◽

Young Jae Kwon ◽

Kyung Seok Woo ◽

...

Keyword(s):

Thin Film ◽

Thin Films ◽

Chemical Vapor Deposition ◽

Silicon Nitride ◽

Resistive Switching ◽

Vapor Deposition ◽

Chemical Vapor ◽

Bipolar Resistive Switching ◽

N Sources ◽

Switching Property

This study investigates a bipolar resistive switching property of a silicon nitride thin film deposited by plasma enhanced chemical vapor deposition using the SiH4 and NH3 as the Si- and N-sources, respectively.

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