Study of electrical properties in the insulating samples 70Ge: Ga p-type at very low temperatures

2017 ◽  
Vol 55 (6) ◽  
pp. 2283-2290
Author(s):  
Mohamed Errai ◽  
Abdelhamid El kaaouachi ◽  
Hassan El idrissi ◽  
Asmae Chakhmane
Keyword(s):  
Electrical Properties ◽  
Low Temperatures ◽  
P Type

Electrical Properties of p-Type ZnSnAs2 Crystals at Low Temperatures

1965 ◽  
Vol 8 (3) ◽  
pp. K159-K162 ◽  
Author(s):  
F. P. Kesamanly ◽  
D. N. Nasledov ◽  
Yu. V. Rud
Keyword(s):  
Electrical Properties ◽  
Low Temperatures ◽  
P Type

Properties of H, O and C in GaN

1996 ◽  
Vol 421 ◽  
Author(s):  
S. J. Pearton ◽  
C. R. Abernathy ◽  
J. W. Lee ◽  
C. B. Vartuli ◽  
J. D. MacKenzie ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Low Temperatures ◽  
Minority Carrier ◽  
Wet Etching ◽  
Carrier Injection ◽  
Plasma Exposure ◽  
Activation Efficiency ◽  
Gan Crystal ◽  
P Type ◽  
Type Conduction

AbstractThe electrical properties of the light ion impurities H, O and C in GaN have been examined in both as-grown and implanted material. H is found to efficiently passivate acceptors such as Mg, Ca and C. Reactivation occurs at ≥450°C and is enhanced by minority carrier injection. The hydrogen does not leave the GaN crystal until >800°C, and its diffusivity is relatively high (˜10−11cm2/s) even at low temperatures (<200°C) during injection by wet etching, boiling in water or plasma exposure. Oxygen shows a low donor activation efficiency when implanted into GaN, with an ionization level of 30 - 40 meV. It is essentially immobile up to 1100°C. Carbon can produce low p-type levels (3×1017cm−3) in GaN during MOMBE, although there is some evidence it may also create n-type conduction in other nitrides.

The electrical properties of germanium semiconductors at low temperatures

Physica ◽  
1954 ◽  
Vol 3 (7-12) ◽  
pp. 834-844 ◽  
Author(s):  
H FRITZSCHE ◽  
K LARKHOROVITZ
Keyword(s):  
Electrical Properties ◽  
Low Temperatures

Correlation between the electrical properties and the interfacial microstructures of TiAl-based ohmic contacts to p-type 4H-SiC

2004 ◽  
Vol 33 (5) ◽  
pp. 460-466 ◽  
Author(s):  
S. Tsukimoto ◽  
K. Nitta ◽  
T. Sakai ◽  
M. Moriyama ◽  
Masanori Murakami
Keyword(s):  
Electrical Properties ◽  
Ohmic Contacts ◽  
P Type

Study of the electrical properties of  Cz p-type solar-grade silicon wafers against the high-temperature processes

2021 ◽  
Vol 127 (6) ◽  
Author(s):  
Mohamed Maoudj ◽  
Djoudi Bouhafs ◽  
Nacer Eddine Bourouba ◽  
Abdelhak Hamida-Ferhat ◽  
Abdelkader El Amrani
Keyword(s):  
High Temperature ◽  
Electrical Properties ◽  
Silicon Wafers ◽  
Solar Grade Silicon ◽  
High Temperature Processes ◽  
Grade Silicon ◽  
P Type

Tunable optical and electrical properties of p-type Cu2O thin films

2021 ◽  
Author(s):  
Daniel A. Fentahun ◽  
Alekha Tyagi ◽  
Sugandha Singh ◽  
Prerna Sinha ◽  
Amodini Mishra ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Optical And Electrical Properties ◽  
Cu2o Thin Films ◽  
P Type

SiC Epitaxial Layers Grown by Sublimation Method and their Electrical Properties

2007 ◽  
Vol 556-557 ◽  
pp. 153-156
Author(s):  
Chi Kwon Park ◽  
Gi Sub Lee ◽  
Ju Young Lee ◽  
Myung Ok Kyun ◽  
Won Jae Lee ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Epitaxial Layer ◽  
Light Emission ◽  
Epitaxial Layers ◽  
Current Voltage ◽  
Space Technique ◽  
Sublimation Method ◽  
Device Applications ◽  
P Type ◽  
Surface Morphologies

A sublimation epitaxial method, referred to as the Closed Space Technique (CST) was adopted to produce thick SiC epitaxial layers for power device applications. In this study, we aimed to systematically investigate surface morphologies and electrical properties of SiC epitaxial layers grown with varying a SiC/Al ratio in a SiC source powder during the sublimation growth using the CST method. It was confirmed that the acceptor concentration of epitaxial layer was continuously decreased with increasing the SiC/Al ratio. The blue light emission was successfully observed on a PN diode structure fabricated with the p-type SiC epitaxial layer. Furthermore, 4H-SiC MESFETs having a micron-gate length were fabricated using a lithography process and their current-voltage performances were characterized.

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