Properties of H, O and C in GaN

1996 ◽  
Vol 421 ◽  
Author(s):  
S. J. Pearton ◽  
C. R. Abernathy ◽  
J. W. Lee ◽  
C. B. Vartuli ◽  
J. D. MacKenzie ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Low Temperatures ◽  
Minority Carrier ◽  
Wet Etching ◽  
Carrier Injection ◽  
Plasma Exposure ◽  
Activation Efficiency ◽  
Gan Crystal ◽  
P Type ◽  
Type Conduction

AbstractThe electrical properties of the light ion impurities H, O and C in GaN have been examined in both as-grown and implanted material. H is found to efficiently passivate acceptors such as Mg, Ca and C. Reactivation occurs at ≥450°C and is enhanced by minority carrier injection. The hydrogen does not leave the GaN crystal until >800°C, and its diffusivity is relatively high (˜10−11cm2/s) even at low temperatures (<200°C) during injection by wet etching, boiling in water or plasma exposure. Oxygen shows a low donor activation efficiency when implanted into GaN, with an ionization level of 30 - 40 meV. It is essentially immobile up to 1100°C. Carbon can produce low p-type levels (3×1017cm−3) in GaN during MOMBE, although there is some evidence it may also create n-type conduction in other nitrides.

scholarly journals Highly Rectifying Heterojunctions Formed by Annealed ZnO Nanorods on GaN Substrates

Nanomaterials ◽  
2020 ◽  
Vol 10 (3) ◽  
pp. 508 ◽  
Author(s):  
Stanislav Tiagulskyi ◽  
Roman Yatskiv ◽  
Hana Faitová ◽  
Šárka Kučerová ◽  
David Roesel ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Leakage Current ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Zno Nanorods ◽  
Carrier Injection ◽  
Ion Beam Lithography ◽  
Current Voltage ◽  
P Type ◽  
Surface Leakage

We study the effect of thermal annealing on the electrical properties of the nanoscale p-n heterojunctions based on single n-type ZnO nanorods on p-type GaN substrates. The ZnO nanorods are prepared by chemical bath deposition on both plain GaN substrates and on the substrates locally patterned by focused ion beam lithography. Electrical properties of single nanorod heterojunctions are measured with a nanoprobe in the vacuum chamber of a scanning electron microscope. The focused ion beam lithography provides a uniform nucleation of ZnO, which results in a uniform growth of ZnO nanorods. The specific configuration of the interface between the ZnO nanorods and GaN substrate created by the focused ion beam suppresses the surface leakage current and improves the current-voltage characteristics. Further improvement of the electrical characteristics is achieved by annealing of the structures in nitrogen, which limits the defect-mediated leakage current and increases the carrier injection efficiency.

Study of electrical properties in the insulating samples 70Ge: Ga p-type at very low temperatures

2017 ◽  
Vol 55 (6) ◽  
pp. 2283-2290
Author(s):  
Mohamed Errai ◽  
Abdelhamid El kaaouachi ◽  
Hassan El idrissi ◽  
Asmae Chakhmane
Keyword(s):  
Electrical Properties ◽  
Low Temperatures ◽  
P Type

Effects of Impurities Distribution on the Crystal Structure and Electrical Properties of Multi-Crystalline Silicon Ingots

2011 ◽  
Vol 675-677 ◽  
pp. 101-104
Author(s):  
Qi Zhi Xing ◽  
Wei Dong ◽  
Shu Ang Shi ◽  
Guo Bin Li ◽  
Yi Tan
Keyword(s):  
Electrical Properties ◽  
Minority Carrier ◽  
Crystalline Silicon ◽  
Melting Furnace ◽  
Minority Carrier Lifetime ◽  
Vacuum Induction Melting ◽  
Induction Melting ◽  
Columnar Crystal ◽  
P Type ◽  
Crystal Region

Multi-crystalline silicon ingots were prepared by directional solidification using vacuum induction melting furnace. The content of aluminum and iron deeply decreased in the columnar crystal region of the multi-crystalline silicon ingots. The columnar crystal growth broke off corresponded to the iron contents sharply increased. The height of columnar crystal in the silicon ingots related to the pulling rates had been clarified by the constitutional supercooling theory. The maximum of the resistivity and the minority carrier lifetime closed to the transition zone where the conductive type changed from p-type to n-type in silicon ingots. Further analysis suggested that the electrical properties were related to the contents of shallow level impurities aluminum, boron and phosphorus.

Excess Capacitance Due to Minority Carrier Injection in CrSi2/p-Type Crystalline Si Isotype Junction

2010 ◽  
Vol 49 (9) ◽  
pp. 091302 ◽  
Author(s):  
Orhan Özdemir ◽  
U. Deneb Yilmazer ◽  
Beyhan Tatar ◽  
Mustafa Ürgen ◽  
Kubilay Kutlu
Keyword(s):  
Minority Carrier ◽  
Carrier Injection ◽  
P Type

Electrical Properties of p-Type ZnSnAs2 Crystals at Low Temperatures

1965 ◽  
Vol 8 (3) ◽  
pp. K159-K162 ◽  
Author(s):  
F. P. Kesamanly ◽  
D. N. Nasledov ◽  
Yu. V. Rud
Keyword(s):  
Electrical Properties ◽  
Low Temperatures ◽  
P Type

Degradation of Hydrogen-Passivated p-Type Layers in GaAs by Minority Carrier Injection and Reverse Bias Annealing

1990 ◽  
Vol 184 ◽  
Author(s):  
A. J. Tavendale ◽  
S. J. Pearton ◽  
A. A. Williams ◽  
D. Alexiev
Keyword(s):  
Active Region ◽  
Quantum Well ◽  
Atomic Hydrogen ◽  
Reverse Bias ◽  
Minority Carrier ◽  
Forward Bias ◽  
Carrier Injection ◽  
Long Term Stability ◽  
P Type

ABSTRACTWe detail experiments showing that acceptor passivation by atomic hydrogen in p-type GaAs is unstable to either illumination, forward bias annealing or reverse bias annealing. The long-term stability of operation of devices employing hydrogen in or near the active region of FETs or quantum-well lasers is therefore questionable. The systematics of acceptor reactivation during minority carrier injection or reverse bias annealing are presented.

Conductivity Control of AlGaN. Fabrication of AlGaN/GaN Multi-Heterośtructure and their Application to UV/Blue Light Emitting Devices

1992 ◽  
Vol 242 ◽  
Author(s):  
I. Akasaki ◽  
H. Amano
Keyword(s):  
Electrical Properties ◽  
Size Effect ◽  
High Quality ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Quantum Size ◽  
Junction Type ◽  
P Type ◽  
First Time ◽  
Type Conduction

ABSTRACTThe method for controlling the electrical properties of n-type GaN and AIGaN have been established. Both GaN and AIGaN films having p - type conduction have been realized for the first time. High quality AIGaN/GaN mu I t i-he t er ostrueture showing clear quantum size effect has been fabricated. P-n junction type UV/blue LED with double he t e ros t rue ture have been developed for the first time.

Noninjecting, high-barrier junctions on p-type silicon

1985 ◽  
Vol 63 (6) ◽  
pp. 723-726
Author(s):  
N. Garry Tarr
Keyword(s):  
Minority Carrier ◽  
Bipolar Transistors ◽  
Carrier Injection ◽  
Type Silicon ◽  
Current Densities ◽  
Heavily Doped ◽  
P Type ◽  
Ultrathin Oxide ◽  
Transient Measurements

The fabrication of junctions with very low minority-carrier injection ratios and reasonably good diode characteristics on p-type silicon is reported. These junctions were formed by growing an ultrathin oxide layer on a monocrystalline substrate, depositing polysilicon heavily doped in situ with phosphorus over the oxide, overlaying the polysilicon with aluminum, and then annealing the resulting sandwich structure at temperatures in the range 400–450 °C. The junctions can exhibit leakage current densities below 10−6 A∙cm−2 at moderate reverse bias and reverse breakdown voltages in excess of 20 V. The absence of minority-carrier injection has been demonstrated by diode reverse recovery transient measurements and by the fabrication of bipolar transistors employing these junctions as emitters.

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