Optimizing Surface Modification of Silicon Nanowire Field-Effect Transistors by Polyethylene Glycol for MicroRNA Detection

Author(s):  
Cao-An Vu ◽  
Hsin-Ying Lai ◽  
Chia-Yu Chang ◽  
Hardy Wai-Hong Chan ◽  
Wen-Yih Chen
2007 ◽  
Vol 90 (14) ◽  
pp. 142110 ◽  
Author(s):  
M. T. Björk ◽  
O. Hayden ◽  
H. Schmid ◽  
H. Riel ◽  
W. Riess

2016 ◽  
Vol 60 (1) ◽  
pp. 81-90 ◽  
Author(s):  
Vivek Pachauri ◽  
Sven Ingebrandt

Biologically sensitive field-effect transistors (BioFETs) are one of the most abundant classes of electronic sensors for biomolecular detection. Most of the time these sensors are realized as classical ion-sensitive field-effect transistors (ISFETs) having non-metallized gate dielectrics facing an electrolyte solution. In ISFETs, a semiconductor material is used as the active transducer element covered by a gate dielectric layer which is electronically sensitive to the (bio-)chemical changes that occur on its surface. This review will provide a brief overview of the history of ISFET biosensors with general operation concepts and sensing mechanisms. We also discuss silicon nanowire-based ISFETs (SiNW FETs) as the modern nanoscale version of classical ISFETs, as well as strategies to functionalize them with biologically sensitive layers. We include in our discussion other ISFET types based on nanomaterials such as carbon nanotubes, metal oxides and so on. The latest examples of highly sensitive label-free detection of deoxyribonucleic acid (DNA) molecules using SiNW FETs and single-cell recordings for drug screening and other applications of ISFETs will be highlighted. Finally, we suggest new device platforms and newly developed, miniaturized read-out tools with multichannel potentiometric and impedimetric measurement capabilities for future biomedical applications.


2021 ◽  
Author(s):  
Yejin Yang ◽  
Juhee Jeon ◽  
Jaemin Son ◽  
Kyoungah Cho ◽  
Sangsig Kim

Abstract The processing of large amounts of data requires a high energy efficiency and fast processing time for high-performance computing systems. However, conventional von Neumann computing systems have performance limitations because of bottlenecks in data movement between separated processing and memory hierarchy, which causes latency and high power consumption. To overcome this hindrance, logic-in-memory (LIM) has been proposed that performs both data processing and memory operations. Here, we present a NAND and NOR LIM composed of silicon nanowidre feedback field-effect transistors, whose configuration resembles that of CMOS logic gate circuits. The LIM can perform memory operations to retain its output logic under zero-bias conditions as well as logic operations with a high processing speed of nanoseconds. The newly proposed dynamic voltage-transfer characteristics verify the operating principle of the LIM. This study demonstrates that the NAND and NOR LIM has promising potential to resolve power and processing speed issues.


2015 ◽  
Vol 1109 ◽  
pp. 163-166
Author(s):  
M. Wesam Al-Mufti ◽  
U. Hashim ◽  
Mijanur Rahman ◽  
Tijjani Adam ◽  
A.S. Ibraheam ◽  
...  

Currently, the potential use of Semiconductor nanowires as parts of future devices has triggered an increased interest in biosensor research. The COMSOL Multiphysics is simulation used that can improve the sensitivity of Bioelectronics to extend their stability and utility. In this paper, we are investigating the effect of DNA concentration of the electrolyte effect biosensor on the conductance of the nanowire through finite element calculations. First, the distribution of the electrostatic has potential in the nanowire due to the DNA concentration. In conclusion of this paper represented DNA that conductance nanowire is affected from surface modification after DNA including on the model.


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