The Field Effect of Concentration DNA on Conductance of Silicon Nanowire

2015 ◽  
Vol 1109 ◽  
pp. 163-166
Author(s):  
M. Wesam Al-Mufti ◽  
U. Hashim ◽  
Mijanur Rahman ◽  
Tijjani Adam ◽  
A.S. Ibraheam ◽  
...  
Keyword(s):  
Finite Element ◽  
Surface Modification ◽  
Field Effect ◽  
Silicon Nanowire ◽  
Semiconductor Nanowires ◽  
Comsol Multiphysics ◽  
Dna Concentration ◽  
Finite Element Calculations ◽  
Potential Use

Currently, the potential use of Semiconductor nanowires as parts of future devices has triggered an increased interest in biosensor research. The COMSOL Multiphysics is simulation used that can improve the sensitivity of Bioelectronics to extend their stability and utility. In this paper, we are investigating the effect of DNA concentration of the electrolyte effect biosensor on the conductance of the nanowire through finite element calculations. First, the distribution of the electrostatic has potential in the nanowire due to the DNA concentration. In conclusion of this paper represented DNA that conductance nanowire is affected from surface modification after DNA including on the model.

Investigated Effect of Points Charge of the Receptors on the Conduction of Semiconductor Nanowire

2015 ◽  
Vol 1109 ◽  
pp. 167-170
Author(s):  
M. Wesam Al-Mufti ◽  
U. Hashim ◽  
Mijanur Rahman ◽  
Tijjani Adam ◽  
A.H. Azman ◽  
...  
Keyword(s):  
Finite Element ◽  
Oxide Layer ◽  
Point Charge ◽  
Potential Distribution ◽  
Silicon Nanowire ◽  
Comsol Multiphysics ◽  
Functional Layer ◽  
Semiconductor Nanowire ◽  
Finite Element Calculations

The paper reported a study on an effect of the point charge of the bio-interface of a nanowire field biosensor on the conductance of the nanowire, through finite element calculations using COMSOL Multiphysics. A model with 5 layers starting with silicon nanowire of radius 10nm surrounded by a 2-nm oxide layer, and the oxide layer were surrounded by a 5 nm thick functional layer and 2 points charge were considered for this study and last layer is for electrolyte. The results shows that is different voltages with points change is that effected on the conductance of nanowire that is clear from different of potential distribution of point charge.

scholarly journals Highly Sensitive and Selective Sodium Ion Sensor Based on Silicon Nanowire Dual Gate Field-Effect Transistor

Sensors ◽  
2021 ◽  
Vol 21 (12) ◽  
pp. 4213
Author(s):  
Seong-Kun Cho ◽  
Won-Ju Cho
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Silicon Nanowire ◽  
Silicon On Insulator ◽  
Sodium Ion ◽  
Ion Sensor ◽  
Highly Sensitive ◽  
Selective Membrane ◽  
Dual Gate ◽  
Effect Transistor

In this study, a highly sensitive and selective sodium ion sensor consisting of a dual-gate (DG) structured silicon nanowire (SiNW) field-effect transistor (FET) as the transducer and a sodium-selective membrane extended gate (EG) as the sensing unit was developed. The SiNW channel DG FET was fabricated through the dry etching of the silicon-on-insulator substrate by using electrospun polyvinylpyrrolidone nanofibers as a template for the SiNW pattern transfer. The selectivity and sensitivity of sodium to other ions were verified by constructing a sodium ion sensor, wherein the EG was electrically connected to the SiNW channel DG FET with a sodium-selective membrane. An extremely high sensitivity of 1464.66 mV/dec was obtained for a NaCl solution. The low sensitivities of the SiNW channel FET-based sodium ion sensor to CaCl2, KCl, and pH buffer solutions demonstrated its excellent selectivity. The reliability and stability of the sodium ion sensor were verified under non-ideal behaviors by analyzing the hysteresis and drift. Therefore, the SiNW channel DG FET-based sodium ion sensor, which comprises a sodium-selective membrane EG, can be applied to accurately detect sodium ions in the analyses of sweat or blood.

Functionalized aluminum-catalyzed silicon nanowire formation and radial junction photovoltaic devices

Nanoscale ◽  
2021 ◽  
Author(s):  
Wipakorn Jevasuwan ◽  
Naoki Fukata
Keyword(s):  
Surface Modification ◽  
Solar Cells ◽  
Surface Defects ◽  
Silicon Nanowire ◽  
Photovoltaic Devices ◽  
Step Process ◽  
One Step ◽  
Length Reduction

Vertical Al-catalyzed SiNW arrays with shaped surfaces were synthesized by a one-step process and NW-based solar cells were demonstrated with optimized NW surface defects through surface modification and length reduction.

Theoretical Insights on Tunable Optoelectronics and Charge Mobilities in Cyano-Perylenediimides: Interplays between -CN Numbers and Positions

2021 ◽  
Author(s):  
Raka Ahmed ◽  
Arun Manna
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Organic Field Effect Transistor ◽  
Research Attention ◽  
Effect Transistor ◽  
Potential Use

Air-stable perylenediimide (PDI) and its derivatives, in particularly the cyano-functionalized ones have attracted great research attention for their potential use in flexible optoelectronics, organic field-effect-transistor (OFET) as n-type transport materials...

Device Noise Reduction for Silicon Nanowire Field-Effect-Transistor Based Sensors by Using a Schottky Junction Gate

ACS Sensors ◽  
2019 ◽  
Vol 4 (2) ◽  
pp. 427-433 ◽  
Author(s):  
Xi Chen ◽  
Si Chen ◽  
Qitao Hu ◽  
Shi-Li Zhang ◽  
Paul Solomon ◽  
...  
Keyword(s):  
Noise Reduction ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Silicon Nanowire ◽  
Schottky Junction ◽  
Effect Transistor ◽  
Device Noise

Effect of Metal - Silicon Nanowire Contacts on the Performance of Accumulation Metal Oxide Semiconductor Field Effect Transistor

2008 ◽  
Vol 1144 ◽  
Author(s):  
Pranav Garg ◽  
Yi Hong ◽  
Md. Mash-Hud Iqbal ◽  
Stephen J. Fonash
Keyword(s):  
Metal Oxide ◽  
Silicon Nanowires ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Silicon Nanowire ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Manufacturing Cost ◽  
Effect Transistor ◽  
The Impact

ABSTRACTRecently, we have experimentally demonstrated a very simply structured unipolar accumulation-type metal oxide semiconductor field effect transistor (AMOSFET) using grow-in-place silicon nanowires. The AMOSFET consists of a single doping type nanowire, metal source and drain contacts which are separated by a partially gated region. Despite its simple configuration, it is capable of high performance thereby offering the potential of a low manufacturing-cost transistor. Since the quality of the metal/semiconductor ohmic source and drain contacts impacts AMOSFET performance, we repot here on initial exploration of contact variations and of the impact of thermal process history. With process optimization, current on/off ratios of 106 and subthreshold swings of 70 mV/dec have been achieved with these simple devices

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