Fabrication and characterizations of large homoepitaxial single crystal diamond grown by DC arc plasma jet CVD

Homoepitaxial diamond layers were grown on commercial 3.5 x 3.5 x 1.2 mm3 HPHT synthetic type Ib (100) single crystal diamond plates using a DC Arc Plasma Jet CVD operating at gas recycling mode. The effects of substrate temperature and CH4/H2 ratio on the surface morphology, the growth rate and the quality of the synthesized diamond have been studied using optical microscopy and Raman spectroscopy. With no intentional nitrogen added, the growth rate up to 12.3µm/h has been obtained in the single crystal diamond sample deposited at 1000 °C with CH4/H2=0.625%, exhibiting relatively smooth surface morphology without any growth hillocks nor non-epitaxial crystallites, and presenting the typical feature of the epitaxial step-flow growth. The full width at half maximum (FWHM) of the Raman spectra was 2.08 cm-1, which was close to that of the natural type IIa single crystal diamond.

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High-rate homoepitaxial growth of CVD single crystal diamond by dc arc plasma jet at blow-down (open cycle) mode

Diamond and Related Materials ◽

10.1016/j.diamond.2014.04.008 ◽

2014 ◽

Vol 46 ◽

pp. 42-51 ◽

Cited By ~ 5

Author(s):

J. Liu ◽

L.F. Hei ◽

J.H. Song ◽

C.M. Li ◽

W.Z. Tang ◽

...

Keyword(s):

Single Crystal ◽

Plasma Jet ◽

High Rate ◽

Arc Plasma ◽

Blow Down ◽

Homoepitaxial Growth ◽

Single Crystal Diamond ◽

Open Cycle ◽

Dc Arc

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Optical characterization of single-crystal diamond grown by DC arc plasma jet CVD

International Journal of Minerals Metallurgy and Materials ◽

10.1007/s12613-017-1535-x ◽

2017 ◽

Vol 24 (12) ◽

pp. 1424-1430 ◽

Cited By ~ 4

Author(s):

Li-fu Hei ◽

Yun Zhao ◽

Jun-jun Wei ◽

Jin-long Liu ◽

Cheng-ming Li ◽

...

Keyword(s):

Single Crystal ◽

Plasma Jet ◽

Optical Characterization ◽

Arc Plasma ◽

Single Crystal Diamond ◽

Dc Arc

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MOTION OF ANODE ATTACHMENT AND FLUCTUATIONS OF PLASMA JET IN DC ARC PLASMA TORCH

High Temperature Material Processes An International Quarterly of High-Technology Plasma Processes ◽

10.1615/hightempmatproc.v1.i2.20 ◽

1997 ◽

Vol 1 (2) ◽

pp. 167-178 ◽

Cited By ~ 16

Author(s):

Milan Hrabovsky ◽

M. Konrad ◽

Vladimir Kopecky ◽

J. Hlina ◽

J. Benes ◽

...

Keyword(s):

Plasma Torch ◽

Plasma Jet ◽

Arc Plasma ◽

Arc Plasma Torch ◽

Dc Arc ◽

Dc Arc Plasma Torch

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The 7-in. freestanding diamond thermal conductive film fabricated by DC arc Plasma Jet CVD with multi-stage magnetic fields

Diamond and Related Materials ◽

10.1016/j.diamond.2021.108812 ◽

2022 ◽

pp. 108812

Author(s):

Yabo Huang ◽

Liangxian Chen ◽

Siwu Shao ◽

Ke Huang ◽

Kang An ◽

...

Keyword(s):

Magnetic Fields ◽

Plasma Jet ◽

Arc Plasma ◽

Multi Stage ◽

Conductive Film ◽

Dc Arc

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Deposition of large area high quality diamond wafers with high growth rate by DC arc plasma jet

Diamond and Related Materials ◽

10.1016/s0925-9635(00)00289-2 ◽

2000 ◽

Vol 9 (9-10) ◽

pp. 1673-1677 ◽

Cited By ~ 7

Author(s):

H. Guo ◽

Z.L. Sun ◽

Q.Y. He ◽

S.M. Du ◽

X.B. Wu ◽

...

Keyword(s):

Growth Rate ◽

High Growth ◽

Plasma Jet ◽

High Growth Rate ◽

Arc Plasma ◽

Large Area ◽

High Quality ◽

Dc Arc

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Fracture behavior of diamond films deposited by DC arc plasma jet CVD

Ceramics International ◽

10.1016/j.ceramint.2018.04.178 ◽

2018 ◽

Vol 44 (11) ◽

pp. 13402-13408 ◽

Cited By ~ 2

Author(s):

Kang An ◽

Liangxian Chen ◽

Xiongbo Yan ◽

Xin Jia ◽

Yun Zhao ◽

...

Keyword(s):

Fracture Behavior ◽

Diamond Films ◽

Plasma Jet ◽

Arc Plasma ◽

Dc Arc

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Synthesizing Cubic Diamond Crystal Using DC Plasma Jet CVD

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.825.71 ◽

2019 ◽

Vol 825 ◽

pp. 71-76

Author(s):

Hiromichi Toyota ◽

Xia Zhu ◽

Ryoya Shiraishi ◽

Kazuto Nakajima ◽

Yukiharu Iwamoto ◽

...

Keyword(s):

High Speed ◽

Catalytic Effect ◽

Plasma Jet ◽

Methanol Solution ◽

Arc Plasma ◽

Plasma Power ◽

Experimental Conditions ◽

Diamond Crystals ◽

Dc Arc ◽

Solution Gas

Diamond crystals are successfully synthesized by irradiating DC arc plasma jet to the substrate set in a methanol solution. It is the important procedure to preheat the substrate by inert Ar plasma jet before introducing the methanol solution gas to the plasma jet gun. The effects of two experimental conditions, the incident power and the substrates, are investigated. In the case of the Si substrate, cubic crystalline diamond grains of same size are synthesized at the plasma power of 470W. High speed hetero epitaxy is expected by using this method. In the case of the tungsten carbide substrate, diamond crystals and carbon nanotubes are simultaneously synthesized at the plasma power of 260W. The catalytic effect of Co binder in the substrate may cause the chemical reaction of the nanotube synthesis.

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