Superconductivity in nano- and micro-patterned high quality single crystalline boron-doped diamond films

2018 ◽  
Vol 90 ◽  
pp. 181-187 ◽  
Author(s):  
Taisuke Kageura ◽  
Masakuni Hideko ◽  
Ikuto Tsuyuzaki ◽  
Shotaro Amano ◽  
Aoi Morishita ◽  
...  
2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Taisuke Kageura ◽  
Masakuni Hideko ◽  
Ikuto Tsuyuzaki ◽  
Aoi Morishita ◽  
Akihiro Kawano ◽  
...  

Abstract Superconducting quantum interference devices (SQUIDs) are currently used as magnetic flux detectors with ultra-high sensitivity for various applications such as medical diagnostics and magnetic material microstructure analysis. Single-crystalline superconducting boron-doped diamond is an excellent candidate for fabricating high-performance SQUIDs because of its robustness and high transition temperature, critical current density, and critical field. Here, we propose a fabrication process for a single-crystalline boron-doped diamond Josephson junction with regrowth-induced step edge structure and demonstrate the first operation of a single-crystalline boron-doped diamond SQUID above 2 K. We demonstrate that the step angle is a significant parameter for forming the Josephson junction and that the step angle can be controlled by adjusting the microwave plasma-enhanced chemical vapour deposition conditions of the regrowth layer. The fabricated junction exhibits superconductor–weak superconductor–superconductor-type behaviour without hysteresis and a high critical current density of 5800 A/cm2.


2012 ◽  
Vol 1395 ◽  
Author(s):  
Shannon. N. Demlow ◽  
I. Berkun ◽  
M. Becker ◽  
T. Hogan ◽  
T.A. Grotjohn

ABSTRACTHigh quality single crystal boron-doped diamond films are deposited in a microwave plasma-assisted CVD reactor with feedgas mixtures including hydrogen, methane, diborane, and carbon dioxide at reactor pressures of 160 Torr. The effect of diborane levels and other growth parameters on the incorporated boron levels are investigated, and the doping efficiency is calculated over a wide range of boron concentrations. The boron level is investigated using infrared absorption, and compared to SIMS measurements, and defects are shown to affect the doping uniformity.


2001 ◽  
Vol 10 (3-7) ◽  
pp. 750-754 ◽  
Author(s):  
N.G. Ferreira ◽  
E. Abramof ◽  
E.J. Corat ◽  
N.F. Leite ◽  
V.J. Trava-Airoldi

2019 ◽  
Vol 92 ◽  
pp. 41-46 ◽  
Author(s):  
Yohei Harada ◽  
Ryota Hishinuma ◽  
Nicolae Spătaru ◽  
Yusei Sakurai ◽  
Kazuya Miyasaka ◽  
...  

2018 ◽  
Vol 2 (4) ◽  
pp. 045015 ◽  
Author(s):  
Dinesh Kumar ◽  
Shibnath Samanta ◽  
K Sethupathi ◽  
M S Ramachandra Rao

2013 ◽  
Vol 28 (5) ◽  
pp. 688-692
Author(s):  
丁明清 DING Ming-qing ◽  
李莉莉 LI Li-li ◽  
冯进军 FENG Jin-jun

1995 ◽  
Vol 4 (5-6) ◽  
pp. 678-683 ◽  
Author(s):  
R. Locher ◽  
J. Wagner ◽  
F. Fuchs ◽  
M. Maier ◽  
P. Gonon ◽  
...  

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