scholarly journals Deuterium permeation behavior through yttria-stabilized zirconia coating fabricated by magnetron sputtering

2020 ◽  
Vol 157 ◽  
pp. 111769
Author(s):  
Riho Endoh ◽  
Kazuki Nakamura ◽  
Hikari Fujita ◽  
Moeki Matsunaga ◽  
Keisuke Kimura ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Yttria Stabilized Zirconia ◽  
Zirconia Coating ◽  
Stabilized Zirconia

EPITAXIAL GROWTH OF YTTRIA-STABILIZED ZIRCONIA FILMS ON SILICON BY R.F. MAGNETRON SPUTTERING

1991 ◽  
Vol 05 (27) ◽  
pp. 1829-1835 ◽  
Author(s):  
Q.X. SU ◽  
L. LI ◽  
Y.Y. ZHAO ◽  
Y.Z. ZHANG ◽  
P. XU
Keyword(s):  
Magnetron Sputtering ◽  
Yttria Stabilized Zirconia ◽  
Processing Conditions ◽  
Full Width ◽  
X Ray Diffraction ◽  
Stabilized Zirconia ◽  
X Ray ◽  
Si Substrates ◽  
Zirconia Films ◽  
Scanning Electron

Yttria-stabilized Zirconia(YSZ) films were deposited on (100)Si substrates by R.F. magnetron sputtering method. X-ray diffraction analysis showed that the best YSZ films were cubic in structure and was grown epitaxially with (100) orientation. The (200) peak of YSZ films was 0.8° of the full width at half of the maximum, X-ray diffraction based on Seemann-Bohlin focusing geometry showed no peaks. The morphology of the YSZ films was observed by scanning electron microscopy. The effects of the processing conditions (such as substrate temperature, oxygen partial pressure, etc.) on the structure of the film were also discussed.

scholarly journals Physical and Electrical Properties of Yttria-Stabilized Zirconia Thin Films Prepared by Radio Frequency Magnetron Sputtering

10.14311/1743 ◽  
2013 ◽  
Vol 53 (2) ◽  
Author(s):  
Dmitriy A. Golosov ◽  
Sergey M. Zavatskiy ◽  
Sergey N. Melnikov
Keyword(s):  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Xrd Analysis ◽  
Radio Frequency Magnetron ◽  
Yttria Stabilized Zirconia ◽  
Radio Frequency Magnetron Sputtering ◽  
Stabilized Zirconia ◽  
Temperature Range ◽  
Mobile Ions ◽  
Deposited Films

This paper presents the electrophysical characteristics of a 7 mol.% yttria-stabilized zirconia (YSZ) thin film deposited by radio-frequency magnetron sputtering. In order to form the crystallinestructure, the deposited films were annealed in air over a temperature range of 700 ÷ 900 °C. By XRD analysis it was established that as the deposited films were amorphous, they crystallized into a pure cubic structure as a result of annealing in air at a temperature above 820 °C.The electrophysical properties of YSZ films were investigated on structures such¨as Ni/YSZ/Pt/Ti/Si and Ni/YSZ/Si. Film features ? > 20 and tg ? < 0.05 were obtained. An estimate of the capacity-voltage characteristic proved that the Ni/YSZ/Si structures possessed a hysteresis. This hysteresis resulted from the drift of the mobile ions in the YSZ film. High-temperature ionic conductivity of the stabilized zirconia was determined by the measurements of the electric resistivity of the YSZ films at 1 kHz over the temperature range from ambient to 800 °C. The YSZ film conductivity obtained was 1.96 × 10-2 S/cm under 800 °C.

Thermal Properties of Plasma-Sprayed Multilayer Al2O3/Yttria-Stabilized Zirconia Coating

2020 ◽  
Vol 20 (1) ◽  
pp. 524-529 ◽  
Author(s):  
Byeong-Hong Jeong ◽  
Sang-Mi Park ◽  
Woo-Sik Hwang ◽  
Kyung-Hwan Hyun ◽  
Yun-Ok Park ◽  
...  
Keyword(s):  
Thermal Properties ◽  
Yttria Stabilized Zirconia ◽  
Zirconia Coating ◽  
Stabilized Zirconia ◽  
Plasma Sprayed

Epitaxial pore-free gadolinia-doped ceria thin films on yttria-stabilized zirconia by RF magnetron sputtering

2013 ◽  
Vol 39 (8) ◽  
pp. 9749-9752 ◽  
Author(s):  
Haris M. Ansari ◽  
Michael D. Rauscher ◽  
Suliman A. Dregia ◽  
Sheikh A. Akbar
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Yttria Stabilized Zirconia ◽  
Doped Ceria ◽  
Stabilized Zirconia
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