EPITAXIAL GROWTH OF YTTRIA-STABILIZED ZIRCONIA FILMS ON SILICON BY R.F. MAGNETRON SPUTTERING
1991 ◽
Vol 05
(27)
◽
pp. 1829-1835
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Keyword(s):
X Ray
◽
Yttria-stabilized Zirconia(YSZ) films were deposited on (100)Si substrates by R.F. magnetron sputtering method. X-ray diffraction analysis showed that the best YSZ films were cubic in structure and was grown epitaxially with (100) orientation. The (200) peak of YSZ films was 0.8° of the full width at half of the maximum, X-ray diffraction based on Seemann-Bohlin focusing geometry showed no peaks. The morphology of the YSZ films was observed by scanning electron microscopy. The effects of the processing conditions (such as substrate temperature, oxygen partial pressure, etc.) on the structure of the film were also discussed.
2007 ◽
Vol 124-126
◽
pp. 235-238
2007 ◽
Vol 21
(18n19)
◽
pp. 3156-3159
Keyword(s):
2009 ◽
Vol 67
◽
pp. 271-276
◽
2006 ◽
Vol 200
(14-15)
◽
pp. 4579-4585
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