Study of the effect of temperature on thermophysical properties of ethyl myristate by dual-beam thermal lens technique

Optik ◽  
2021 ◽  
Vol 247 ◽  
pp. 168000
Author(s):  
M.R. Mohebbifar
2021 ◽  
Vol 42 (7) ◽  
Author(s):  
J. L. Jiménez-Pérez ◽  
G. López-Gamboa ◽  
J. F. Sánchez-Ramírez ◽  
Z. N. Correa-Pacheco ◽  
A. Netzahual‑Lopantzi ◽  
...  

Optik ◽  
2021 ◽  
pp. 168499
Author(s):  
A. Ghanem ◽  
M.D. Zidan ◽  
M.S. EL-Daher ◽  
A. Allahham
Keyword(s):  

2002 ◽  
Vol 20 (2-4) ◽  
pp. 99-110 ◽  
Author(s):  
Achamma Kurian ◽  
Nibu A. George ◽  
Binoy Paul ◽  
V. P. N. Nampoori ◽  
C. P. G. Vallabhan

In this paper we report the use of the dual beam thermal lens technique as a quantitative method to determine absolute fluorescence quantum efficiency and concentration quenching of fluorescence emission from rhodamine 6G doped Poly(methyl methacrylate) (PMMA), prepared with different concentrations of the dye. A comparison of the present data with that reported in the literature indicates that the observed variation of fluorescence quantum yield with respect to the dye concentration follows a similar profile as in the earlier reported observations on rhodamine 6G in solution. The photodegradation of the dye molecules under cw laser excitation is also studied using the present method.


2011 ◽  
Vol 483 ◽  
pp. 224-227 ◽  
Author(s):  
Zheng Yuan Zhang ◽  
Yong Mei ◽  
Jian Gen Li ◽  
Xiao Gang Li ◽  
Zhi Cheng Feng

A Si-based resonant pressure sensor structure with dual-beam was proposed to solve the problem of serious temperature drift in thermal excited Si-based resonant pressure sensor. In this structure, temperature variation sensed by non-pressure-sensing resonant beam was subtracted from that sensed by pressure-sensing beam, to cancel variations of the pressure-sensing beam with temperature and compensate for temperature drift of thermal-excited Si-based resonant pressure sensor. A prototype of Si-based resonant pressure sensor with dual-beam was developed. Preliminary test results showed that the effect of temperature drift was reduced to 1/30 of the uncompensated device, greatly improving sensing accuracy of thermal excited Si-based resonant pressure sensor.


Sign in / Sign up

Export Citation Format

Share Document