Dielectric properties of sintered aluminum nitride

2005 ◽  
Vol 23 (4-6) ◽  
pp. 382-385 ◽  
Author(s):  
Shoichi Kume ◽  
Masaki Yasuoka ◽  
Naoki Omura ◽  
Koji Watari
1990 ◽  
Vol 203 ◽  
Author(s):  
Ellice Y. Luh ◽  
Leonard E. Dolhert ◽  
Jack H. Enloe ◽  
John W. Lau

ABSTRACTCharacteristics such as CTE close to that of silicon, high thermal conductivity, and good dielectric properties make aluminum nitride (AIN) an excellent dielectric for packaging silicon-based high density multichip interconnects. However, there remains many aspects of its behavior that have not been characterized. One such example is the behavior of the various metallizations used within a package. As with A12O3, these metallizations must contribute toward a hermetic seal separating the die from the environment. However, the chemical behavior of the metallization systems used for A12O3 may not be compatible with non-oxide ceramics such as AIN. Consequently, these chemical interactions are investigated in view of the requirements for each application within electronic packages. Hermeticity testing results are also included in the discussion.


2015 ◽  
Vol 106 ◽  
pp. 404-410 ◽  
Author(s):  
Xiulan He ◽  
Lei Shi ◽  
Yingkui Guo ◽  
Junwang Liu ◽  
Feng Ye

Sensors ◽  
2015 ◽  
Vol 15 (9) ◽  
pp. 22660-22671 ◽  
Author(s):  
Jun Liu ◽  
Yukun Yuan ◽  
Zhong Ren ◽  
Qiulin Tan ◽  
Jijun Xiong

2014 ◽  
Vol 602-603 ◽  
pp. 565-569
Author(s):  
Chang Lu Fu ◽  
Shang Hua Wu ◽  
Yan Ling Cheng ◽  
Jun Yu Fu ◽  
Ruo Jun Wu ◽  
...  

In this paper, the aluminum nitride (AlN) was fabricated by pressureless sintering with YF3 and various silicon compounds as the sintering aids. The phase, microstructure, density and thermal conductivity were characterized by XRD, SEM and laser thermal diffusivity method. The sample densities were detected varied from 3.17 to 3.30g/cm3 and room-temperature thermal conductivity varied from 196 to 233 W/m·K. Samples sintered with YF3 additives have the highest thermal conductivity. The sintering aids with SiO2, Si3N4 and SiC would decrease the density and the thermal conductivity obviously, and also change the fracture mode from the intergranular to transgranular , which is a key for the toughness of the AlN substrate.


RSC Advances ◽  
2019 ◽  
Vol 9 (49) ◽  
pp. 28851-28856 ◽  
Author(s):  
Zhenzhen Ou ◽  
Feng Gao ◽  
Huaijun Zhao ◽  
Shumeng Dang ◽  
Lingjian Zhu

The present work aims at studying the thermal and dielectric properties of addition-cure liquid silicone rubber (ALSR) matrix composites using boron nitride (BN) and aluminum nitride (AlN) as a hybrid thermal conductive filler.


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