Facile solution-controlled growth of CuInS2 thin films on FTO and TiO2/FTO glass substrates for photovoltaic application

2009 ◽  
Vol 481 (1-2) ◽  
pp. 786-791 ◽  
Author(s):  
Shengjie Peng ◽  
Fangyi Cheng ◽  
Jing Liang ◽  
Zhanliang Tao ◽  
Jun Chen
Keyword(s):  
Thin Films ◽  
Controlled Growth ◽  
Glass Substrates ◽  
Photovoltaic Application ◽  
Cuins2 Thin Films ◽  
Fto Glass

Properties of CuInS2 Thin Films Fabricated by SEL Method

Solar Energy ◽  
2005 ◽  
Author(s):  
Gye-Choon Park ◽  
Woon-Jo Jeong ◽  
Hyeon-Hun Yang ◽  
Hae-Duck Jung ◽  
Jin Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Grain Size ◽  
Lattice Constant ◽  
Energy Band ◽  
Optical Energy ◽  
Glass Substrates ◽  
Cuins2 Thin Films ◽  
Sulfur Atmosphere ◽  
P Type

CuInS2 thin films were fabricated by sulphurization of S/In/Cu Stacked elemental layers (SEL) on slide glass substrates by annealing in vacuum of 10−3 Torr at temperature of 50 °C ∼ 350 °C. Some S/In/Cu SEL were vacuum annealed under a sulfur atmosphere. The thin films thus annealed were analyzed by measuring structural, electrical and optical properties. When CuInS2 thin films were made under a sulfur atmosphere, lattice constant of a and grain size of the thin film were a little larger than those in only vacuum annealing. The largest lattice constant of a and grain size was 5.63 Å and 1.2 μm respectively. Also, when the thin films were made under a sulfur atmosphere, conduction types were all p-type with resistivities of around 10−1 Ωcm and optical energy band gaps of the films were a little larger than those in only vacuum and the largest optical energy band gap of CuInS2 thin film was 1.53 eV.

Sol–gel synthesis of PZT thin films on FTO glass substrates for electro-optic devices

2019 ◽  
Vol 93 (3) ◽  
pp. 623-632
Author(s):  
Ali Shoghi ◽  
Hossein Abdizadeh ◽  
Amid Shakeri ◽  
Mohammad Reza Golobostanfard
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Pzt Thin Films ◽  
Glass Substrates ◽  
Electro Optic ◽  
Sol Gel Synthesis ◽  
Fto Glass

Absorber Films of Antimony Chalcogenides via Chemical Deposition for Photovoltaic Application

2004 ◽  
Vol 836 ◽  
Author(s):  
M. T. S. Nair ◽  
Y. Rodríguez-Lazcano ◽  
Y. Peña ◽  
S. Messina ◽  
J. Campos ◽  
...  
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Optical Band Gap ◽  
Chemical Deposition ◽  
Dark Conductivity ◽  
Glass Substrates ◽  
Photovoltaic Application ◽  
Sodium Selenosulfate ◽  
P Type ◽  
Antimony Chalcogenides

ABSTRACTAntimony sulfide thin films (300 nm) have been deposited on glass substrates at 1–10°C from chemical bath. When heated these become crystalline and photoconductive with optical band gap (direct) of 1.7 eV. Thin films formed from chemical baths containing SbCl3 and sodium selenosulfate are of mixed phase Sb2O3/Sb2Se3, which when heated in the presence of Se-vapor converts to single phase Sb2Se3 film with optical band gap of 1.1 eV. Such films possess dark conductivity of 10-8 ohm-1cm-1 and show photosensitivity of two orders. Reaction of Sb2S3-CuS in nitrogen at 400°C produces crystalline, photoconductive p-type CuSbS2 with optical band gap (direct) of 1.5 eV. By controlling the deposition and heating condition, (i)Sb2S3-(p)CuSbS2 layer is formed, which is utilized in a photovoltaic structure, (n)CdS:In-(i)Sb2S3-(p)CuSbS2, with a Voc of 345 mV and Jsc 0.18 mA/cm2 under 1 kW m-2 tungsten halogen illumination. In the case of a structure, CdS:Cl-Sb2S3-Cu2-xSe, Voc of 350 mV and Jsc of 0.5 mA/cm2 are observed.

Annealing effects on CuInS2 thin films grown on glass substrates by using pulsed laser deposition

2014 ◽  
Vol 64 (3) ◽  
pp. 410-414 ◽  
Author(s):  
Lei Zhang ◽  
Jingang Fang ◽  
Mingkai Li ◽  
Xunzhong Shang ◽  
Yunbin He ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Glass Substrates ◽  
Cuins2 Thin Films ◽  
Annealing Effects

scholarly journals Synthesis of Bi 2 S 3 thin films based on pulse-plating bismuth nanocrystallines and its photoelectrochemical properties

2020 ◽  
Vol 7 (8) ◽  
pp. 200479
Author(s):  
Fangchang Ding ◽  
Qiujin Wang ◽  
Shaofei Zhou ◽  
Guochen Zhao ◽  
Ying Ye ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Cost ◽  
Pulse Plating ◽  
Potassium Citrate ◽  
Photoelectrochemical Properties ◽  
High Quality ◽  
Glass Substrates ◽  
Structure Morphology ◽  
Plating Method ◽  
Fto Glass

The solubility of Bi 3+ in aqueous solution is an important factor that limits the fabrication of high-quality Bi 2 S 3 thin films. In order to find a low-cost method to manufacture high-quality Bi 2 S 3 thin films, we are reporting the preparation of the Bi 2 S 3 thin films based on pulse-plating method in this paper for the first time. The nano-bismuth particles were obtained by electroplating on fluorine-doped SnO 2 (FTO)-coated conducting glass substrates with saturated bismuth potassium citrate solution as the electroplating bath, and then it was put into a muffle furnace to oxidize. Finally, the thin films depositing on FTO glass substrates were put into the thioacetamide solution for vulcanization. In the end, the Bi 2 S 3 thin films were successfully prepared on FTO glass substrates. Different characterization techniques were used to characterize the structure, morphology and photoelectrochemical properties of the prepared thin films. The test results revealed that we used this method to synthesize the high-quality Bi 2 S 3 thin films, thus the Bi 2 S 3 materials synthesized through this method are promising candidates in photoelectrochemical application.

Chemical synthesis and study of structural and optoelectronic properties of CdS thin films: Effect of SILAR growth cycles

2015 ◽  
Vol 9 (3) ◽  
pp. 2461-2469
Author(s):  
S. R. Gosavi ◽  
K. B. Chaudhari
Keyword(s):  
Thin Films ◽  
Average Crystallite Size ◽  
X Ray Diffraction ◽  
Silar Method ◽  
Growth Cycles ◽  
Glass Substrates ◽  
Layer Adsorption ◽  
Cds Thin Films ◽  
Structural And Optoelectronic Properties ◽  
Deposited Film

CdS thin films were deposited on glass substrates by using successive ionic layer adsorption and reaction (SILAR) method at room temperature. The effect of SILAR growth cycles on structural, morphological, optical and electrical properties of the films has been studied.  The thickness of the deposited film is measured by employing weight difference method. The X-ray diffraction (XRD) and field emission scanning electron microscopy (FE-SEM) studies showed that all the films exhibit polycrystalline nature and are covered well with glass substrates. The values of average crystallite size were found to be 53 nm, 58 nm, 63 nm and 71 nm corresponding to the thin films deposited with 30, 40, 50 and 60 SILAR growth cycles respectively. From the UV–VIS spectra of the deposited thin films, it was seen that both the absorption properties and energy bandgap of the films changes with increasing number of SILAR growth cycles. A decrease of electrical resistivity has been observed with increasing SILAR growth cycle. 

PREPARATION AND CHARACTERIZATION OF POLYVINYL ALCOHOL THIN FILMS FOR ORGANIC THIN FILM TRANSISTORS AND BIOMEDICAL APPLICATIONS

2018 ◽  
Vol 5 (2) ◽  
pp. 16-18
Author(s):  
Chandar Shekar B ◽  
Ranjit Kumar R ◽  
Dinesh K.P.B ◽  
Sulana Sundar C ◽  
Sunnitha S ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thin Film Transistors ◽  
Gravimetric Method ◽  
Dip Coating ◽  
Organic Thin Film Transistors ◽  
Poly Vinyl Alcohol ◽  
Organic Thin Film ◽  
Glass Substrates ◽  
Coating Method

Thin films of poly vinyl alcohol (PVA) were prepared on pre-cleaned glass substrates by Dip Coating Method. FTIR spectrum was used to identify the functional groups present in the prepared films. The vibrational peaks observed at 1260 cm-1 and 851 cm-1 are assigned to C–C stretching and CH rocking of PVA.The characteristic band appearing at 1432 cm-1 is assigned to C–H bend of CH2 of PVA. The thickness of the prepared thin films were measured by using an electronic thickness measuring instrument (Tesatronic-TTD20) and cross checked by gravimetric method. XRD spectra indicated the amorphous nature of the films.Surface morphology of the coated films was studied by scanning electron microscope (SEM). The surface revealed no pits and pin holes on the surface. The observed surface morphology indicated that these films could be used as dielectric layer in organic thin film transistors and as drug delivery system for wound healing.

X- ray diffraction and dielectric properties of PbSe thin films

2019 ◽  
Vol 15 (34) ◽  
pp. 1-14
Author(s):  
Bushra A. Hasan
Keyword(s):  
Thin Films ◽  
Thermal Activation ◽  
Thermal Evaporation ◽  
Thermal Activation Energy ◽  
Dielectric Constants ◽  
Conductivity Measurements ◽  
X Ray Diffraction ◽  
Thermal Evaporation Method ◽  
X Ray ◽  
Glass Substrates

Lead selenide PbSe thin films of different thicknesses (300, 500, and 700 nm) were deposited under vacuum using thermal evaporation method on glass substrates. X-ray diffraction measurements showed that increasing of thickness lead to well crystallize the prepared samples, such that the crystallite size increases while the dislocation density decreases with thickness increasing. A.C conductivity, dielectric constants, and loss tangent are studied as function to thickness, frequency (10kHz-10MHz) and temperatures (293K-493K). The conductivity measurements confirm confirmed that hopping is the mechanism responsible for the conduction process. Increasing of thickness decreases the thermal activation energy estimated from Arhinus equation is found to decrease with thickness increasing. The increase of thickness lead to reduce the polarizability α while the increasing of temperature lead to increase α.

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