Ceramic film capacitors with high dielectric constant and high breakdown strength are promising for use in advanced power electronics, which would offer higher performance, improved reliability, and enhanced volumetric and gravimetric efficiencies. We have grown lead lanthanum zirconate titanate (PLZT) on nickel foils and platinized silicon (PtSi) substrates by chemical solution deposition. A buffer layer of LaNiO3 (LNO) was deposited on the nickel foils prior to the deposition of PLZT. We measured the following electrical properties for PLZT films grown on LNO buffered Ni and PtSi substrates, respectively: remanent polarization, ≈25.4 μC/cm2 and ≈10.1 μC/cm2; coercive electric field, ≈23.8 kV/cm and ≈27.9 kV/cm; dielectric constant at room temperature, ≈1300 and ≈1350; and dielectric loss at room temperature, ≈0.06 and ≈0.05. Weibull analysis determined the mean breakdown strength to be 2.6 MV/cm and 1.5 MV/cm for PLZT films grown on LNO buffered Ni and PtSi substrates, respectively. Residual stress analysis by x-ray diffraction revealed compressive stress of ≈-520 MPa in the ≈2-μm-thick PLZT grown on LNO buffered Ni foil, but a tensile stress of ≈210 MPa in the ≈2-μm-thick PLZT grown on PtSi substrates.
