Performance of Bi2Te3-Based Thermoelectric Modules Tailored by Diffusion Barriers

Thin films of amorphous Ni-Nb alloys are of interest since they can be used as diffusion barriers for integrated circuits on Si. A native SiO2 layer is an effective barrier for Ni diffusion but it deformation during the crystallization of the alloy film lead to the appearence of diffusion fluxes through it and the following formation of silicides. This study concerns the direct evidence of the action of stresses in the process of the crystallization of Ni-Nb films on Si and the structure of forming NiSi2 islands.

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The reaction of amorphous Ni-Nb films with Si in the presence of a native SiO2 layer

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100176459 ◽

1990 ◽

Vol 48 (4) ◽

pp. 664-665

Author(s):

N. Rozhanski ◽

A. Barg

Keyword(s):

High Temperature ◽

Crystallization Temperature ◽

Diffusion Barriers ◽

Sio2 Layer ◽

Si Substrate ◽

Cross Sectional ◽

Plan View ◽

Temperature Range ◽

Sputter Deposited

Amorphous Ni-Nb alloys are of potential interest as diffusion barriers for high temperature metallization for VLSI. In the present work amorphous Ni-Nb films were sputter deposited on Si(100) and their interaction with a substrate was studied in the temperature range (200-700)°C. The crystallization of films was observed on the plan-view specimens heated in-situ in Philips-400ST microscope. Cross-sectional objects were prepared to study the structure of interfaces.The crystallization temperature of Ni5 0 Ni5 0 and Ni8 0 Nb2 0 films was found to be equal to 675°C and 525°C correspondingly. The crystallization of Ni5 0 Ni5 0 films is followed by the formation of Ni6Nb7 and Ni3Nb nucleus. Ni8 0Nb2 0 films crystallise with the formation of Ni and Ni3Nb crystals. No interaction of both films with Si substrate was observed on plan-view specimens up to 700°C, that is due to the barrier action of the native SiO2 layer.

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The Effect of the Microstructure of Diffusion Barriers on the Palladium Activation for Electroless Copper Deposition

MRS Proceedings ◽

10.1557/proc-716-b11.20 ◽

2002 ◽

Vol 716 ◽

Author(s):

Seok Woo Hong ◽

Yong Sun Lee ◽

Ki-Chul Park ◽

Jong-Wan Park

Keyword(s):

Electron Microscopy ◽

Diffusion Barriers ◽

Copper Deposition ◽

X Ray Diffraction ◽

Plan View ◽

X Ray ◽

Transmission Electron ◽

Electroless Copper ◽

Sheet Resistance Measurement ◽

Scanning Electron

AbstractThe effect of microstructure of dc magnetron sputtered TiN and TaN diffusion barriers on the palladium activation for autocatalytic electroless copper deposition has been investigated by using X-ray diffraction, sheet resistance measurement, field emission scanning electron microscopy (FE-SEM) and plan view transmission electron microscopy (TEM). The density of palladium nuclei on TaN diffusion barrier increases as the grain size of TaN films decreases, which was caused by increasing nitrogen content in TaN films. Plan view TEM results of TiN and TaN diffusiton barriers showed that palladium nuclei formed mainly on the grain boundaries of the diffusion barriers.

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