High Power Impulse Magnetron Sputtering Growth Processes for Copper Nitride Thin Film and its highly enhanced UV - Visible Photodetection Properties

2021 ◽  
pp. 162924
Author(s):  
Shikha Sakalley ◽  
Adhimoorthy Saravanan ◽  
Wei-Chun Cheng ◽  
Sheng-Chi Chen ◽  
Hui Sun ◽  
...  
Author(s):  
Niklas Bönninghoff ◽  
Wahyu Diyatmika ◽  
Jinn P. Chu ◽  
Stanislav Mráz ◽  
Jochen M. Schneider ◽  
...  

Vacuum ◽  
2019 ◽  
Vol 160 ◽  
pp. 410-417 ◽  
Author(s):  
D.L. Ma ◽  
H.Y. Liu ◽  
Q.Y. Deng ◽  
W.M. Yang ◽  
K. Silins ◽  
...  

2005 ◽  
Vol 98 (10) ◽  
pp. 103506 ◽  
Author(s):  
G. H. Yue ◽  
P. X. Yan ◽  
J. Z. Liu ◽  
M. X. Wang ◽  
M. Li ◽  
...  

2013 ◽  
Vol 834-836 ◽  
pp. 613-616 ◽  
Author(s):  
Yang Li ◽  
Chen Kui ◽  
Hui Ren Peng ◽  
Ming Jia Zhu ◽  
Ya Wen Pan ◽  
...  

This dissertation employs the method of direct current (DC) magnetron sputtering on the reverse side of the high power LED aluminum substrate to deposit the AlN thin film. And then, we paste the high power LED beads to the front of the substrate, testing and studying the heat dissipation influences of the AlN thin film on the high-power LED beads. In order to compare easily, some parts of the reverse of aluminum substrate should be overlaid thermally conductive silicone. The result indicates that depositing the AIN thin film or the overlay thermally conductive silicone on the back side of the aluminum substrate can improve the heat dissipation capability of high power LED, the AIN thin film especially.


Coatings ◽  
2022 ◽  
Vol 12 (1) ◽  
pp. 96
Author(s):  
Yung-Lin Chen ◽  
Yi-Cheng Lin ◽  
Wan-Yu Wu

It has always been a huge challenge to prepare the Mo back contact of inorganic compound thin film solar cells (e.g., CIGS, CZTS, Sb2Se3) with good conductivity and adhesion at the same time. High-power impulse magnetron sputtering (HiPIMS) has been proposed as one solution to improve the properties of the thin film. In this study, the HiPIMS technology replaced the traditional DC power sputtering technology to deposit Mo back contact on polyimide (PI) substrates by adjusting the experimental parameters of HiPIMS, including working pressure and pulse DC bias. When the Mo back contact is prepared under a working pressure of 5 mTorr and bias voltage of −20 V, the conductivity of the Mo back contact is 9.9 × 10−6 Ωcm, the residual stress of 720 MPa, and the film still has good adhesion. Under the minimum radius of curvature of 10 mm, the resistivity change rate of Mo back contact does not increase by more than 15% regardless of the 1680 h or 1500 bending cycle tests, and the Mo film still has good adhesion in appearance. Experimental results show that, compared with traditional DC sputtering, HiPIMS coating technology has better conductivity and adhesion at the same time, and is especially suitable for PI substrates.


2019 ◽  
Vol 24 (6) ◽  
pp. 93
Author(s):  
Azhar Mohammed Abed1 ◽  
, Abdulhussain K. Elttayef2 ◽  
Khalid Hamdi Razeg1

Zinc sulfide (ZnS) thin films were deposited on glass substrate with different thickness by radiofrequency (RF) magnetron sputtering technique, and deals with effect of thickness on the optical and structural properties. The structure, surface morphology and optical properties are investigated by x-ray diffraction (XRD), atomic forces microscopy (AFM), scanning electron microscopy, and UV-visible spectrophotometer.  The result of XRD show that ZnS thin film exhibited cubic structure with strong peaks at (111) as highly preferential orientation. The maximum particle size of films was found to be 14.4 at thickness 868nm. SEM image show that the shape of grain is like spherical. The result of AFM shows that the surface roughness decrease with increasing in film thickness from (6.19 to 1.45)nm. The result of UV-visible suggests that transmittance increasing with increases in film thickness, the value maximum of ZnS transmission was 87.82%  at thickness 868nm, can be very much useful in the field of solar cell and optical sensor .   http://dx.doi.org/10.25130/tjps.24.2019.113


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