High-growth-rate AlGaN buffer layers and atmospheric-pressure growth of low-carbon GaN for AlGaN/GaN HEMT on the 6-in.-diameter Si substrate metal-organic vapor phase epitaxy system

2013 ◽  
Vol 370 ◽  
pp. 269-272 ◽  
Author(s):  
Akinori Ubukata ◽  
Yoshiki Yano ◽  
Hayato Shimamura ◽  
Akira Yamaguchi ◽  
Toshiya Tabuchi ◽  
...  
Keyword(s):  
Atmospheric Pressure ◽  
High Growth ◽  
High Growth Rate ◽  
Buffer Layers ◽  
Low Carbon ◽  
Si Substrate ◽  
Organic Vapor ◽  
Gan Hemt ◽  
Metal Organic ◽  
Algan Buffer

Electron Traps in n-GaN Grown on Si (111) Substrates by MOVPE

2008 ◽  
Vol 1068 ◽  
Author(s):  
Tsuneo Ito ◽  
Yutaka Terada ◽  
Takashi Egawa
Keyword(s):  
Sapphire Substrate ◽  
Deep Level ◽  
Buffer Layers ◽  
Si Substrate ◽  
Electron Traps ◽  
Organic Vapor ◽  
Pair Number ◽  
Metal Organic ◽  
Transient Spectroscopy ◽  
Gan On Si

ABSTRACTDeep level electron traps in n-GaN grown by metal organic vapor phase epitaxy (MOVPE) on Si (111) substrate were studied by means of deep level transient spectroscopy (DLTS). The growth of n-GaN on different pair number of AlN/GaN superlattice buffer layers (SLS) system and on c-face sapphire substrate are compared. Three deep electron traps labeled E4 (0.7-0.8 eV), E5 (1.0-1.1 eV), were observed in n-GaN on Si substrate. And the concentrations of these traps observed for n-GaN on Si are very different from that on sapphire substrate. E4 is the dominant of these levels for n-GaN on Si substrate, and it behaves like point-defect due to based on the analysis by electron capture kinetics, in spite of having high dislocation density of the order of 1010 cm−3.

High growth rate metal organic vapor phase epitaxy GaN

2008 ◽  
Vol 310 (17) ◽  
pp. 3950-3952 ◽  
Author(s):  
Koh Matsumoto ◽  
Hiroki Tokunaga ◽  
Akinori Ubukata ◽  
Kazumasa Ikenaga ◽  
Yasushi Fukuda ◽  
...  
Keyword(s):  
Growth Rate ◽  
Vapor Phase ◽  
High Growth ◽  
High Growth Rate ◽  
Vapor Phase Epitaxy ◽  
Organic Vapor ◽  
Metal Organic

Drastic Reduction of Dislocation Density in Semipolar (1122) GaN Stripe Crystal on Si Substrate by Dual Selective Metal–Organic Vapor Phase Epitaxy

2011 ◽  
Vol 50 (1S1) ◽  
pp. 01AD04 ◽  
Author(s):  
Tasuku Murase ◽  
Tomoyuki Tanikawa ◽  
Yoshio Honda ◽  
Masahito Yamaguchi ◽  
Hiroshi Amano ◽  
...  
Keyword(s):  
Dislocation Density ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Si Substrate ◽  
Drastic Reduction ◽  
Organic Vapor ◽  
Metal Organic

Reduction in leakage current in AlGaN/GaN HEMT with three Al-containing step-graded AlGaN buffer layers on silicon

2014 ◽  
Vol 53 (5) ◽  
pp. 051001 ◽  
Author(s):  
Xinxin Yu ◽  
Jinyu Ni ◽  
Zhonghui Li ◽  
Jianjun Zhou ◽  
Cen Kong
Keyword(s):  
Leakage Current ◽  
Buffer Layers ◽  
Gan Hemt ◽  
Algan Buffer

Growth of GaN film on 150mm Si (111) using multilayer AlN∕AlGaN buffer by metal-organic vapor phase epitaxy method

2007 ◽  
Vol 91 (22) ◽  
pp. 222111 ◽  
Author(s):  
Kung-Liang Lin ◽  
Edward-Yi Chang ◽  
Yu-Lin Hsiao ◽  
Wei-Ching Huang ◽  
Tingkai Li ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Organic Vapor ◽  
Metal Organic ◽  
Gan Film ◽  
Algan Buffer

Spectroscopic ellipsometry study of GaAs1−xBix material grown on GaAs substrate by atmospheric pressure metal-organic vapor-phase epitaxy

2009 ◽  
Vol 95 (1) ◽  
pp. 011910 ◽  
Author(s):  
Nebiha Ben Sedrine ◽  
Imed Moussa ◽  
Hedi Fitouri ◽  
Ahmed Rebey ◽  
Belgacem El Jani ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Spectroscopic Ellipsometry ◽  
Atmospheric Pressure ◽  
Gaas Substrate ◽  
Vapor Phase Epitaxy ◽  
Organic Vapor ◽  
Metal Organic

High growth rate diamond synthesis in a large area atmospheric pressure inductively coupled plasma

1990 ◽  
Vol 5 (11) ◽  
pp. 2326-2333 ◽  
Author(s):  
M. A. Cappelli ◽  
T. G. Owano ◽  
C. H. Kruger
Keyword(s):  
Growth Rates ◽  
Atmospheric Pressure ◽  
Atomic Hydrogen ◽  
Inductively Coupled Plasma ◽  
High Growth ◽  
High Growth Rate ◽  
Diamond Synthesis ◽  
Large Area ◽  
Inductively Coupled ◽  
Hydrogen Flux

A study of diamond synthesis in an atmospheric pressure inductively coupled argon-hydrogen-methane plasma is presented. The plasma generated has an active area of 20 cm2 and a free stream temperature of approximately 5000 K. Deposition experiments lasting 1 h in duration have been performed in both stagnation flow and flat plate parallel flow geometries. The diamond film deposited in both configurations are nonuniform yet fairly reproducible. The variation in the growth rates at various regions of the substrate is attributed to the variation in the surface atomic hydrogen flux. Growth rates are as high as 50 μm/h, in regions of the substrate where the atomic hydrogen flux is expected to be large. Little or no growth is observed in regions where the atomic hydrogen is expected to recombine within the thermal boundary layer before arriving at the surface. Individual particles are analyzed by micro-Raman spectroscopy. Large (50 μm) size well-faceted particles show little evidence of non-diamond carbon content and are found to be under a state of compression, displaying shifts in the principal phonon mode as great as 3 cm−1.

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