High growth rate diamond synthesis in a large area atmospheric pressure inductively coupled plasma

1990 ◽  
Vol 5 (11) ◽  
pp. 2326-2333 ◽  
Author(s):  
M. A. Cappelli ◽  
T. G. Owano ◽  
C. H. Kruger
Keyword(s):  
Growth Rates ◽  
Atmospheric Pressure ◽  
Atomic Hydrogen ◽  
Inductively Coupled Plasma ◽  
High Growth ◽  
High Growth Rate ◽  
Diamond Synthesis ◽  
Large Area ◽  
Inductively Coupled ◽  
Hydrogen Flux

A study of diamond synthesis in an atmospheric pressure inductively coupled argon-hydrogen-methane plasma is presented. The plasma generated has an active area of 20 cm2 and a free stream temperature of approximately 5000 K. Deposition experiments lasting 1 h in duration have been performed in both stagnation flow and flat plate parallel flow geometries. The diamond film deposited in both configurations are nonuniform yet fairly reproducible. The variation in the growth rates at various regions of the substrate is attributed to the variation in the surface atomic hydrogen flux. Growth rates are as high as 50 μm/h, in regions of the substrate where the atomic hydrogen flux is expected to be large. Little or no growth is observed in regions where the atomic hydrogen is expected to recombine within the thermal boundary layer before arriving at the surface. Individual particles are analyzed by micro-Raman spectroscopy. Large (50 μm) size well-faceted particles show little evidence of non-diamond carbon content and are found to be under a state of compression, displaying shifts in the principal phonon mode as great as 3 cm−1.

Very High Growth Rate of 4H-SiC Using MTS as Chloride-Based Precursor

2008 ◽  
Vol 600-603 ◽  
pp. 115-118 ◽  
Author(s):  
Henrik Pedersen ◽  
Stefano Leone ◽  
Anne Henry ◽  
Franziska Christine Beyer ◽  
Vanya Darakchieva ◽  
...  
Keyword(s):  
Growth Rate ◽  
Linear Dependence ◽  
Growth Rates ◽  
Molar Fraction ◽  
High Growth ◽  
High Growth Rate ◽  
Epitaxial Layers ◽  
Single Precursor ◽  
Very High

The chlorinated precursor methyltrichlorosilane (MTS), CH3SiCl3, has been used to grow epitaxial layers of 4H-SiC in a hot wall CVD reactor, with growth rates as high as 170 µm/h at 1600°C. Since MTS contains both silicon and carbon, with the C/Si ratio 1, MTS was used both as single precursor and mixed with silane or ethylene to study the effect of the C/Si and Cl/Si ratios on growth rate and doping of the epitaxial layers. When using only MTS as precursor, the growth rate showed a linear dependence on the MTS molar fraction in the reactor up to about 100 µm/h. The growth rate dropped for C/Si < 1 but was constant for C/Si > 1. Further, the growth rate decreased with lower Cl/Si ratio.

Deposition of large area high quality diamond wafers with high growth rate by DC arc plasma jet

2000 ◽  
Vol 9 (9-10) ◽  
pp. 1673-1677 ◽  
Author(s):  
H. Guo ◽  
Z.L. Sun ◽  
Q.Y. He ◽  
S.M. Du ◽  
X.B. Wu ◽  
...  
Keyword(s):  
Growth Rate ◽  
High Growth ◽  
Plasma Jet ◽  
High Growth Rate ◽  
Arc Plasma ◽  
Large Area ◽  
High Quality ◽  
Dc Arc

Low Inductance Antenna (LIA) plasma source and plasma-enhanced dual rotatable magnetron sputter assisted with LIA

2015 ◽  
Vol 2015 (1) ◽  
pp. 000757-000760
Author(s):  
Y. Takaya ◽  
Y. Tanioka ◽  
H. Yoshino ◽  
A. Osawa
Keyword(s):  
Inductively Coupled Plasma ◽  
Low Voltage ◽  
Polymer Surface ◽  
Plasma Source ◽  
Large Area ◽  
Plasma Damage ◽  
Inductively Coupled ◽  
Temperature Deposition ◽  
Magnetron Sputter ◽  
Plasma Profile

In recent years, both low plasma damage and low temperature deposition technic for polymer substrates (e.g. PCB, films and etc.) are often required. We have developed a plasma enhanced dual rotatable magnetron sputter source assisted with inductively coupled plasma (ICP) using low inductance antenna (LIA). LIA has same unique characteristics, a)low voltage high density plasma, b)well controllability of plasma profile to ensure uniformity over large area, c)ionization of sputtered particle and etc. when in being used as a plasma assistant, and besides, LIA can be used as a ICP source for polymer surface modification. We introduce a variety of the possibilities of whether this sputter source is usable for the process of the fabrication of PCB.

scholarly journals Computational Fluid Dynamics (CFD) Simulations and Experimental Measurements in an Inductively-Coupled Plasma Generator Operating at Atmospheric Pressure: Performance Analysis and Parametric Study

Processes ◽  
2019 ◽  
Vol 7 (3) ◽  
pp. 133 ◽  
Author(s):  
Sangeeta Punjabi ◽  
Dilip Barve ◽  
Narendra Joshi ◽  
Asoka Das ◽  
Dushyant Kothari ◽  
...  
Keyword(s):  
Fluid Dynamics ◽  
Atmospheric Pressure ◽  
Inductively Coupled Plasma ◽  
Gas Flow ◽  
Rf Power ◽  
Gas Flow Rate ◽  
Inductively Coupled ◽  
Plasma Resistance ◽  
Computational Fluid Dynamics Cfd ◽  
Icp Torch

In this article, electrical characteristics of a high-power inductively-coupled plasma (ICP) torch operating at 3 MHz are determined by direct measurement of radio-frequency (RF) current and voltage together with energy balance in the system. The variation of impedance with two parameters, namely the input power and the sheath gas flow rate for a 50 kW ICP is studied. The ICP torch system is operated at near atmospheric pressure with argon as plasma gas. It is observed that the plasma resistance increases with an increase in the RF-power. Further, the torch inductance decreases with an increase in the RF-power. In addition, plasma resistance and torch inductance decrease with an increase in the sheath gas flow rate. The oscillator efficiency of the ICP system ranges from 40% to 80% with the variation of the Direct current (DC) powers. ICP has also been numerically simulated using Computational Fluid Dynamics (CFD) to predict the impedance profile. A good agreement was found between the CFD predictions and the impedance experimental data published in the literature.

Photovoltaic silicon produced by thermal plasma: Influence of atomic hydrogen on oxygen elimination and passivation of the crystal defects

1998 ◽  
Vol 13 (10) ◽  
pp. 2709-2720 ◽  
Author(s):  
D. Morvan ◽  
I. Cazard-Juvernat ◽  
J. Amouroux
Keyword(s):  
Thermal Plasma ◽  
Atomic Hydrogen ◽  
Inductively Coupled Plasma ◽  
Thermal Conditions ◽  
Crystal Defects ◽  
Photovoltaic Properties ◽  
Inductively Coupled ◽  
Residual Hydrogen ◽  
Very High ◽  
Method Show

The photovoltaic properties of the polycrystalline silicon depend on the crystallinity and the purity of the material. The thermal plasma process gives us an alternative method of silicon preparation since it is possible to produce an ultrahigh purity with simultaneously a passivation of crystalline defects and active impurities. We demonstrate the efficiency of the plasma purification process and particularly the influence of the atomic hydrogen in an argon thermal plasma on the photovoltaic properties of silicon. The results of the diffusion lengths measured by the photoelectrochemical method show that locally it rises up to 200 μm. We correlate these photovoltaic measurements with the properties of the crystal (defects and purity) by means of measurements by Fourier transform infrared spectroscopy (FTIR) at low temperature (6 K), four probes resistivity technique, scanning electronic microscopy, inductively coupled plasma (ICP), and neutronic activation analyses. We show that the increase of the purity explains the high me asured diffusion lengths. Nevertheless, the thermal conditions of the crystallization of the silicon, due to the specificity of the plasma, lead to defects such as dislocations for which density is particularly high (>106 dis/cm2). The results show that chemical reactions between the atomic hydrogen of the plasma and the oxygen of the silicon occur. They decrease the oxygen content in silicon from 3 × 1017 at./cm3 down to 2 × 1016 at./cm3, while the residual hydrogen in silicon is close to 2 × 1015 at./cm3. This passivates the dangling bonds of ultrapure silicon with a high thermal stability up to 1000 K. The objective of this paper is to demonstrate that the hydrogen in the plasma modifies the electronic properties of the material to achieve a very good photocurrent even though the dislocation density of the silicon is very high.

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