High Quality a-Si:H Films Grown at High Deposition Rates

1999 ◽  
Vol 557 ◽  
Author(s):  
Yoram Lubianiker ◽  
Yanyang Tan ◽  
J. David Cohen ◽  
Gautam Ganguly
Keyword(s):  
Growth Rates ◽  
Defect Density ◽  
High Growth ◽  
Small Concentration ◽  
Considerable Reduction ◽  
Amorphous Films ◽  
High Quality ◽  
Deposition Rates

AbstractIntrinsic a-Si:H samples were grown with and without hydrogen (H2) dilution of silane at different growth rates. We find that the dilution leads to a considerable reduction in the defect density, in particular at high growth rates. The defect density is particularly low for samples grown using H2 dilution conditions at growth rates as high as 10 Å/sec. Using transient photocapacitance measurements we find evidence for a small concentration of microcrystallites embedded in the amorphous films. An increase in the microcrystalline fraction correlates with a decrease in the defect density.

Influence of Growth Pressure and Addition of HCl Gas on Growth Rate of 4H-SiC Epitaxy

2015 ◽  
Vol 821-823 ◽  
pp. 133-136 ◽  
Author(s):  
Takanori Tanaka ◽  
Naoyuki Kawabata ◽  
Yoichiro Mitani ◽  
Masashi Sakai ◽  
Nobuyuki Tomita ◽  
...  
Keyword(s):  
Growth Rate ◽  
High Throughput ◽  
Defect Density ◽  
High Growth ◽  
High Growth Rate ◽  
Pressure Condition ◽  
High Quality ◽  
Growth Pressure ◽  
Hcl Gas

The reduction of the growth pressure was demonstrated to have the same effect as the addition of chloride-containing gas on preventing the Si nucleation and the epitaxy with high growth rate (>50 μm/h) was achieved by using the decreasing pressure condition in a horizontal CVD reactor without chloride-containing gas. The quality of a 30-μm-thick epilayer grown with 40 μm/h was also investigated. Downfall and triangle defect density in the layer was as low as 0.16 /cm2, indicating that a high quality epitaxial wafer can be easily obtained under the condition with high throughput in the sinple CVD system.

Organometallic vapor‐phase epitaxy of high‐quality Ga0.51In0.49P at high growth rates

1989 ◽  
Vol 66 (11) ◽  
pp. 5384-5387 ◽  
Author(s):  
D. S. Cao ◽  
A. W. Kimball ◽  
G. S. Chen ◽  
K. L. Fry ◽  
G. B. Stringfellow
Keyword(s):  
Vapor Phase ◽  
Growth Rates ◽  
High Growth ◽  
Vapor Phase Epitaxy ◽  
Organometallic Vapor Phase Epitaxy ◽  
High Quality

Fast 4H-SiC Epitaxial Growth on 150 mm Diameter Area with High-Speed Wafer Rotation

2014 ◽  
Vol 778-780 ◽  
pp. 117-120 ◽  
Author(s):  
Hiroaki Fujibayashi ◽  
Masahiko Ito ◽  
Hideki Ito ◽  
Isaho Kamata ◽  
Masami Naitou ◽  
...  
Keyword(s):  
Growth Rate ◽  
Epitaxial Growth ◽  
Growth Rates ◽  
High Speed ◽  
Smooth Surface ◽  
Doping Concentration ◽  
Defect Density ◽  
High Growth ◽  
High Growth Rate ◽  
Step Bunching

A single wafer type 150 mm vertical 4H-SiC epitaxial reactor with high-speed wafer rotation was developed. The rotation of the wafer at high speed significantly enhances the growth rate, and high growth rates of 40–50 μm/h are possible on 4°off-cut 4H-SiC substrates. In addition, a low defect density and smooth surface without macro step bunching can be achieved. Excellent uniformity of thickness and doping concentration was obtained for a 150 mm wafer at a high growth rate of 50 μm/h.

GROWTH OF PIKE-PERCH SANDER LUCIOPERCA (L., 1758) (PERCIDAE) IN RESERVOIRS OF K. SATPAYEV’S CHANNEL

2018 ◽  
pp. 59-68
Author(s):  
Saule Zhangirovna Asylbekova ◽  
Kuanysh Baibulatovich Isbekov ◽  
Vladimir Nickolaevich Krainyuk
Keyword(s):  
Growth Rates ◽  
Growth Dynamics ◽  
High Growth ◽  
Water Bodies ◽  
Volga River ◽  
Trophic Resources ◽  
Pike Perch ◽  
The Amur River ◽  
Back Calculation ◽  
Abiotic And Biotic Factors

Pike-perch is an invader for the water basins of Central Kazakhstan. These species have stable self-reproductive populations in the regional waters. Back calculation method was used to investigate pike-perch growth rates in reservoirs of K. Satpayev’s channel. For comparison, the data from the other water bodies (Vyacheslavsky and Sherubay-Nurinsky water reservoirs) were used, as well as literature data. Pike-perch species from the investigated waters don’t show high growth rates. The populations from the reservoirs of K. Satpayev’s channel have quite similar growth rates with populations from the Amur river, from a number of reservoirs in the Volga river basin and from the reservoir in Spain. Sexual differences in growth have not been observed. Evaluating possible influence of various abiotic and biotic factors on the growth rate of pike-perch in the reservoirs of K. Satpayev’s channel was carried out. It has been stated that the availability of trophic resources cannot play a key role in growth dynamics because of their high abundance. Morphology of water bodies also does not play a role, as well as chromaticity, turbidity and other optical water indicators. It can be supposed that the main factor influencing growth of pike perch is the habitat’s temperature. This factor hardly ever approaches optimal values for the species in reservoirs of K. Satpaev’s channel. The possible influence of fishing selectivity on pike-perch growth rates was also evaluated. Currently, there has been imposed a moratorium on pike-perch catch. However, pike-perch is found in by-catches and in catches of amateur fishermen. It should be said that such seizures have an insignificant role in the dynamics of growth rates.

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