Precipitation of multilayer graphene directly on gallium nitride template using Tungsten capping layer

2020 ◽  
Vol 534 ◽  
pp. 125493
Author(s):  
Jumpei Yamada ◽  
Yuki Ueda ◽  
Takahiro Maruyama ◽  
Shigeya Naritsuka
Keyword(s):  
Gallium Nitride ◽  
Multilayer Graphene ◽  
Capping Layer

Precipitation of high-quality multilayer-graphene using Al2O3 barrier and Au cap layers

2015 ◽  
Vol 1786 ◽  
pp. 13-18 ◽  
Author(s):  
Jumpei Yamada ◽  
Manabu Suzuki ◽  
Yuki Ueda ◽  
Takahiro Maruyama ◽  
Shigeya Naritsuka
Keyword(s):  
Low Temperature ◽  
Barrier Layer ◽  
Intensity Ratio ◽  
The Other ◽  
Multilayer Graphene ◽  
High Quality ◽  
Entire Surface ◽  
Capping Layer ◽  
Layer Graphene ◽  
Surface Migration

ABSTRACTThe mechanism for the precipitation of multilayer graphene was investigated with respect to the use of an Al2O3 barrier layer and Au capping layer. The Al2O3 barrier layer suppresses the dissolution of carbon into the catalyst, especially at low temperature, and assists a decrease in the density of graphene nuclei. On the other hand, the Au capping layer is beneficial to weaken the strong binding between the catalyst and the graphene carbon atoms, and enhances the surface migration of precipitated carbon adatoms. A combination of the Al2O3 barrier layer and Au capping layer is useful for the synthesis of high-quality graphene with large grains. On a sample with both layers annealed for 60 min, the area of 5-layer graphene islands is as large as 10 μm, and covers 60% of the entire surface. The Raman D/G band intensity ratio of 0.024 indicates the precipitated graphene is high quality.

scholarly journals Growth of Gallium Nitride Films on Multilayer Graphene Template Using Plasma-Enhanced Atomic Layer Deposition

2019 ◽  
Vol 32 (12) ◽  
pp. 1530-1536
Author(s):  
Ying-Feng He ◽  
Mei-Ling Li ◽  
San-Jie Liu ◽  
Hui-Yun Wei ◽  
Huan-Yu Ye ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Multilayer Graphene ◽  
Layer Deposition

Effect of crystallization of Ni catalyst on direct precipitation of multilayer graphene using W capping layer

2021 ◽  
Vol 555 ◽  
pp. 125969
Author(s):  
Jumpei Yamada ◽  
Yuki Ueda ◽  
Takahiro Maruyama ◽  
Seiji Fujikawa ◽  
Takuo Sasaki ◽  
...  
Keyword(s):  
Ni Catalyst ◽  
Multilayer Graphene ◽  
Capping Layer ◽  
Direct Precipitation

Direct growth of multilayer graphene by precipitation using W capping layer

2016 ◽  
Vol 55 (10) ◽  
pp. 100302 ◽  
Author(s):  
Jumpei Yamada ◽  
Yuki Ueda ◽  
Takahiro Maruyama ◽  
Shigeya Naritsuka
Keyword(s):  
Multilayer Graphene ◽  
Capping Layer ◽  
Direct Growth

Electrical Failure and Damage Analysis of Multi-Layer Metal Films on Flexible Substrate during Cyclic Bending Deformation

2011 ◽  
Author(s):  
Byoung-Joon Kim ◽  
Hae-A-Seul Shin ◽  
In-Suk Choi ◽  
Young-Chang Joo
Keyword(s):  
Fatigue Resistance ◽  
Electrical Resistance ◽  
Metal Film ◽  
Flexible Substrate ◽  
Resistance Change ◽  
Cyclic Bending ◽  
Capping Layer ◽  
Bending Strain ◽  
Cu Film ◽  
Electrical Resistance Change

Abstract The electrical resistance Cu film on flexible substrate was investigated in cyclic bending deformation. The electrical resistance of 1 µm thick Cu film on flexible substrate increased up to 120 % after 500,000 cycles in 1.1 % tensile bending strain. Crack and extrusion were observed due to the fatigue damage of metal film. Low bending strain did not cause any damage on metal film but higher bending strain resulted in severe electrical and mechanical damage. Thinner film showed higher fatigue resistance because of the better mechanical property of thin film. Cu film with NiCr under-layer showed poorer fatigue resistance in tensile bending mode. Ni capping layer did not improve the fatigue resistance of Cu film, but Al capping layer suppressed crack formation and lowered electrical resistance change. The NiCr under layer, Ni capping layer, and Al capping layer effect on electrical resistance change of Cu film was compared with Cu only sample.

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