NEAR-JUNCTION THERMAL MANAGEMENT: THERMAL CONDUCTION IN GALLIUM NITRIDE COMPOSITE SUBSTRATES

2015 ◽  
Vol 18 ◽  
pp. 7-45 ◽  
Author(s):  
Jungwan Cho ◽  
Zijian Li ◽  
Mehdi Asheghi ◽  
Kenneth E. Goodson
Keyword(s):  
Gallium Nitride ◽  
Thermal Management ◽  
Thermal Conduction ◽  
Composite Substrates

scholarly journals Gallium-Nitride Semiconductor Technology and Its Practical Design Challenges in Power Electronics Applications: An Overview

Energies ◽  
2019 ◽  
Vol 12 (14) ◽  
pp. 2663 ◽  
Author(s):  
Mauricio Dalla Vecchia ◽  
Simon Ravyts ◽  
Giel Van den Broeck ◽  
Johan Driesen
Keyword(s):  
Gallium Nitride ◽  
Power Electronics ◽  
Thermal Management ◽  
Low Voltage ◽  
Experimental Testing ◽  
Design Procedure ◽  
Switching Frequency ◽  
Passive Component ◽  
Advantages And Disadvantages ◽  
Design Challenges

This paper will revise, experimentally investigate, and discuss the main application challenges related to gallium nitride power semiconductors in switch-mode power converters. Gallium Nitride (GaN) devices are inherently gaining space in the market. Due to its high switching speed and operational switching frequency, challenges related to the circuit design procedure, passive component selection, thermal management, and experimental testing are currently faced by power electronics engineers. Therefore, the focus of this paper is on low-voltage (<650 V) devices that are used to assemble DC-DC and/or DC-AC converters to, for instance, interconnect PV generation systems in the DC and/or AC grids. The current subjects will be discussed herein: GaN device structure, the advantages and disadvantages of each lateral gallium nitride technology available, design challenges related to electrical layout and thermal management, overvoltages and its implications in the driver signal, and finally, a comprehensive comparison between GaN and Si technology considering the main parameters to increase the converters efficiency.

scholarly journals Nanocelluloses and Related Materials Applicable in Thermal Management of Electronic Devices: A Review

Nanomaterials ◽  
2020 ◽  
Vol 10 (3) ◽  
pp. 448 ◽  
Author(s):  
Kimiyasu Sato ◽  
Yuichi Tominaga ◽  
Yusuke Imai
Keyword(s):  
Thermal Management ◽  
Renewable Resources ◽  
Thermal Conduction ◽  
Electronic Devices ◽  
Heat Removal ◽  
Dielectric Materials ◽  
Electronics Industry ◽  
Insulating Materials ◽  
Thermal Conductivities

Owing to formidable advances in the electronics industry, efficient heat removal in electronic devices has been an urgent issue. For thermal management, electrically insulating materials that have higher thermal conductivities are desired. Recently, nanocelluloses (NCs) and related materials have been intensely studied because they possess outstanding properties and can be produced from renewable resources. This article gives an overview of NCs and related materials potentially applicable in thermal management. Thermal conduction in dielectric materials arises from phonons propagation. We discuss the behavior of phonons in NCs as well.

scholarly journals Significant Reduction of Interfacial Thermal Resistance and Phonon Scattering in Graphene/Polyimide Thermally Conductive Composite Films for Thermal Management

Research ◽  
2021 ◽  
Vol 2021 ◽  
pp. 1-13 ◽  
Author(s):  
Kunpeng Ruan ◽  
Yongqiang Guo ◽  
Chuyao Lu ◽  
Xuetao Shi ◽  
Tengbo Ma ◽  
...  
Keyword(s):  
Thermal Resistance ◽  
Thermal Management ◽  
Polymer Composite ◽  
Thermal Conduction ◽  
Phonon Scattering ◽  
Composite Films ◽  
Conductive Polymer ◽  
Interfacial Thermal Resistance ◽  
Conductive Composite ◽  
Thermally Conductive

The developing flexible electronic equipment are greatly affected by the rapid accumulation of heat, which is urgent to be solved by thermally conductive polymer composite films. However, the interfacial thermal resistance (ITR) and the phonon scattering at the interfaces are the main bottlenecks limiting the rapid and efficient improvement of thermal conductivity coefficients (λ) of the polymer composite films. Moreover, few researches were focused on characterizing ITR and phonon scattering in thermally conductive polymer composite films. In this paper, graphene oxide (GO) was aminated (NH2-GO) and reduced (NH2-rGO), then NH2-rGO/polyimide (NH2-rGO/PI) thermally conductive composite films were fabricated. Raman spectroscopy was utilized to innovatively characterize phonon scattering and ITR at the interfaces in NH2-rGO/PI thermally conductive composite films, revealing the interfacial thermal conduction mechanism, proving that the amination optimized the interfaces between NH2-rGO and PI, reduced phonon scattering and ITR, and ultimately improved the interfacial thermal conduction. The in-plane λ (λ∥) and through-plane λ (λ⊥) of 15 wt% NH2-rGO/PI thermally conductive composite films at room temperature were, respectively, 7.13 W/mK and 0.74 W/mK, 8.2 times λ∥ (0.87 W/mK) and 3.5 times λ⊥ (0.21 W/mK) of pure PI film, also significantly higher than λ∥ (5.50 W/mK) and λ⊥ (0.62 W/mK) of 15 wt% rGO/PI thermally conductive composite films. Calculation based on the effective medium theory model proved that ITR was reduced via the amination of rGO. Infrared thermal imaging and finite element simulation showed that NH2-rGO/PI thermally conductive composite films obtained excellent heat dissipation and efficient thermal management capabilities on the light-emitting diodes bulbs, 5G high-power chips, and other electronic equipment, which are easy to generate heat severely.

Challenges in Characterization and Acceptance of Metal Matrix Composite “Carrier Plate” Material for Space Applications

2012 ◽  
Vol 710 ◽  
pp. 412-417
Author(s):  
A.K. Shah ◽  
M.H. Thaker ◽  
K.B. Vyas
Keyword(s):  
Thermal Management ◽  
Thermal Conduction ◽  
Cost Effective ◽  
Operating Conditions ◽  
Thermal Dissipation ◽  
Space Applications ◽  
New Family ◽  
Day By Day ◽  
Composite Carrier ◽  
Selection Of

In space applications, day by day, the electronic devices are becoming compact with increase in operating frequencies and high power requirements posing challenges in design and selection of materials for high thermal dissipation requirements. In order to achieve optimum performance from thermal management material, engineers have to focus on high reliable, cost effective alternatives. Such materials need to demonstrate excellent thermal conduction to minimize thermo-mechanical stress and fatigue due to operations like soldering, thermal cycling and severe operating conditions. The paper describes a new family of thermal management composite material called “SILVAR”.

Modeling and Analysis for Thermal Management in Gallium Nitride HEMTs Using Microfluidic Cooling

2016 ◽  
Vol 139 (1) ◽  
Author(s):  
Gunjan Agarwal ◽  
Thomas Kazior ◽  
Thomas Kenny ◽  
Dana Weinstein
Keyword(s):  
Gallium Nitride ◽  
Thermal Management ◽  
Transmission Lines ◽  
High Performance ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Element Analysis ◽  
Modeling And Analysis ◽  
Cooling Channels ◽  
Rf Systems

In this paper, thermal management in GaN (gallium nitride) based microelectronic devices is addressed using microfluidic cooling. Numerical modeling is done using finite element analysis (FEA), and the results for temperature distribution are presented for a system comprising multiple cooling channels underneath GaN high-electron mobility transistors (HEMTs). The thermal stack modeled is compatible for heterogeneous integration with conventional silicon-based CMOS devices. Parametric studies for cooling performance are done over a range of geometric and flow factors to determine the optimal cooling configuration within the specified constraints. A power dissipation of 2–4 W/mm is modeled along each HEMT finger in the proposed configuration. The cooling arrangements modeled here hold promising potential for implementation in high-performance radio-frequency (RF) systems for power amplifiers, transmission lines, and other applications in defense and military.

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