Influence of crucible properties and Si3N4-coating composition on the oxygen concentration in multi-crystalline silicon ingots

2021 ◽  
pp. 126178
Author(s):  
S. Schwanke ◽  
M. Trempa ◽  
C. Reimann ◽  
M. Kuczynski ◽  
G. Schroll ◽  
...  
Keyword(s):  
Oxygen Concentration ◽  
Crystalline Silicon ◽  
Coating Composition

scholarly journals Analysis of the Effect of a Vertical Magnetic Field on Melt Convection and Oxygen Transport During Directional Solidification of Multi-Crystalline Silicon by Numerical Simulation

Crystals ◽  
2019 ◽  
Vol 10 (1) ◽  
pp. 8
Author(s):  
Botao Song ◽  
Yufeng Luo ◽  
Senlin Rao ◽  
Fayun Zhang ◽  
Yun Hu
Keyword(s):  
Magnetic Field ◽  
Numerical Simulation ◽  
Directional Solidification ◽  
Oxygen Concentration ◽  
Crystalline Silicon ◽  
Vertical Magnetic Field ◽  
Silicon Melt ◽  
Average Oxygen Concentration ◽  
Melt Convection ◽  
The Magnetic Field

Melt convection during the directional solidification process of multi-crystalline silicon plays a critical role in the transport of impurities. The utilization of a static magnetic field is an effective way to control the melt convection pattern. Studying the effect of the Lorentz force induced by the vertical magnetic field (VMF) on the melt convection of silicon in detail is beneficial to optimize the magnetic field parameters in the production process. Based on the numerical simulation method of multi-physics coupling, this paper explores the effects of different VMF intensities on the convection of silicon melt and the transport of oxygen in the melt during the directional solidification of polycrystalline silicon. The results show that in the first 125 minutes of the crystallization stage, the melt convection velocity is affected significantly by the magnetic field intensities. When different convection circulations are present in the silicon melt, the upper circulation easily transports oxygen to the furnace atmosphere, and the subjacent circulation easily lead to the retention and accumulation of oxygen. Enhancing the VMF intensity to a certain extent can reduce the size of the oxygen retention region in the silicon melt, and the time of the first disappearance of the subjacent circulation near the sidewall of the crucible is shortened. Then the average oxygen concentration in the silicon melt can be reduced. However, a larger vertical magnetic field intensity can result in greater average oxygen concentration in the oxygen retention region.

High-resolution transmission electron microscopic study of highly oxygen doped silicon layer

1989 ◽  
Vol 47 ◽  
pp. 692-693
Author(s):  
H. Takaoka ◽  
M. Tomita ◽  
T. Hayashi
Keyword(s):  
High Resolution ◽  
Oxygen Concentration ◽  
Silicon Layer ◽  
Detailed Structure ◽  
Electron Microscopic ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Doped Silicon ◽  
Argon Ion

High resolution transmission electron microscopy (HRTEM) is the effective technique for characterization of detailed structure of semiconductor materials. Oxygen is one of the important impurities in semiconductors. Detailed structure of highly oxygen doped silicon has not clearly investigated yet. This report describes detailed structure of highly oxygen doped silicon observed by HRTEM. Both samples prepared by Molecular beam epitaxy (MBE) and ion implantation were observed to investigate effects of oxygen concentration and doping methods to the crystal structure.The observed oxygen doped samples were prepared by MBE method in oxygen environment on (111) substrates. Oxygen concentration was about 1021 atoms/cm3. Another sample was silicon of (100) orientation implanted with oxygen ions at an energy of 180 keV. Oxygen concentration of this sample was about 1020 atoms/cm3 Cross-sectional specimens of (011) orientation were prepared by argon ion thinning and were observed by TEM at an accelerating voltage of 400 kV.

Rheological characterization of tack and viscoelasticity of compositions of crepe coating used in the Yankee dryer

TAPPI Journal ◽  
2019 ◽  
Vol 18 (11) ◽  
pp. 641-649
Author(s):  
JOSHUA OMAMBALA ◽  
CARL MCINTYRE
Keyword(s):  
Normal Force ◽  
Weight Ratio ◽  
Good Combination ◽  
Rheological Characterization ◽  
Nonlinear Viscoelastic ◽  
Coating Composition ◽  
Linear And Nonlinear ◽  
Work Done ◽  
Tissue Production

The vast majority of tissue production uses creping to achieve the required set of properties on the base sheet. The Yankee coating helps to develop the desired crepe that in turn determines properties such as bulk and softness. The adhesion of the sheet to the Yankee surface is a very important characteristic to consider in achieving the desired crepe. The coating mix usually consists of the adhesive, modifier, and release. A good combination of these components is essential to achieving the desired properties of the tissue or towel, which often are determined by trials on the machine that can be time consuming and lead to costly rejects. In this paper, five compositions of an industrial Yankee coating adhesive, modifier, and release were examined rheologically. The weight ratio of the adhesive was kept constant at 30% in all five compositions and the modifier and release ratios were varied. The normal force and work done by the different compositions have been shown at various temperatures simulating that of the Yankee surface, and the oscillatory test was carried out to explain the linear and nonlinear viscoelastic characteristic of the optimal coating composition.

Recombination Characteristics of Single-Crystalline Silicon Wafers with a Damaged Near-Surface Layer

2013 ◽  
Vol 58 (2) ◽  
pp. 142-150 ◽  
Author(s):  
A.V. Sachenko ◽  
◽  
V.P. Kostylev ◽  
V.G. Litovchenko ◽  
V.G. Popov ◽  
...  
Keyword(s):  
Surface Layer ◽  
Crystalline Silicon ◽  
Silicon Wafers ◽  
Single Crystalline Silicon ◽  
Near Surface ◽  
Single Crystalline

Formation of Nanocrystalline Silicon in Tin-Doped Amorphous Silicon Films

2020 ◽  
Vol 65 (3) ◽  
pp. 236
Author(s):  
R. M. Rudenko ◽  
O. O. Voitsihovska ◽  
V. V. Voitovych ◽  
M. M. Kras’ko ◽  
A. G. Kolosyuk ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Crystalline Silicon ◽  
Solid Phase ◽  
Nanocrystalline Silicon ◽  
Recrystallization Temperature ◽  
Nanocrystalline Phase ◽  
Silicon Phase ◽  
Silicon Nanocrystallites ◽  
Lower Temperature ◽  
Two Stages

The process of crystalline silicon phase formation in tin-doped amorphous silicon (a-SiSn) films has been studied. The inclusions of metallic tin are shown to play a key role in the crystallization of researched a-SiSn specimens with Sn contents of 1–10 at% at temperatures of 300–500 ∘C. The crystallization process can conditionally be divided into two stages. At the first stage, the formation of metallic tin inclusions occurs in the bulk of as-precipitated films owing to the diffusion of tin atoms in the amorphous silicon matrix. At the second stage, the formation of the nanocrystalline phase of silicon occurs as a result of the motion of silicon atoms from the amorphous phase to the crystalline one through the formed metallic tin inclusions. The presence of the latter ensures the formation of silicon crystallites at a much lower temperature than the solid-phase recrystallization temperature (about 750 ∘C). A possibility for a relation to exist between the sizes of growing silicon nanocrystallites and metallic tin inclusions favoring the formation of nanocrystallites has been analyzed.

Sign in / Sign up

Export Citation Format

Share Document