Evaluation of Near - Surface Groundwater Aquifers through Integrated Geophysical and Geodetic Measurements

The utility of benthic foraminifera in bathymetric interpretation of clastic depositional environments is well established. In contrast, bathymetric distribution of benthic foraminifera in deep-water carbonate environments has been largely neglected. Approximately 260 species and morphotypes of benthic foraminifera were identified from 12 piston core tops and grab samples collected along two traverses 25 km apart across the northern windward margin of Little Bahama Bank at depths of 275-1,135 m. Certain species and operational taxonomic groups of benthic foraminifera correspond to major near-surface sedimentary facies of the windward margin of Little Bahama Bank and serve as reliable depth indicators. Globocassidulina subglobosa, Cibicides rugosus, and Cibicides wuellerstorfi are all reliable depth indicators, being most abundant at depths >1,000 m, and are found in lower slope periplatform aprons, which are primarily comprised of sediment gravity flows. Reef-dwelling peneroplids and soritids (suborder Miliolina) and rotaliines (suborder Rotaliina) are most abundant at depths <300 m, reflecting downslope bottom transport in proximity to bank-margin reefs. Small miliolines, rosalinids, and discorbids are abundant in periplatform ooze at depths <300 m and are winnowed from the carbonate platform. Increased variation in assemblage diversity below 900 m reflects mixing of shallow- and deep-water species by sediment gravity flows.

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Analysis of 2D and 3D defects associated with precipitation of Cu in silicon

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s042482010008866x ◽

1991 ◽

Vol 49 ◽

pp. 870-871

Author(s):

P.M. Rice ◽

MJ. Kim ◽

R.W. Carpenter

Keyword(s):

Colony Growth ◽

Dark Field ◽

Dark Side ◽

Silicide Phase ◽

Strain Fields ◽

Near Surface ◽

Unknown Composition ◽

Secondary Precipitates ◽

20 Nm ◽

2D And 3D

Extrinsic gettering of Cu on near-surface dislocations in Si has been the topic of recent investigation. It was shown that the Cu precipitated hetergeneously on dislocations as Cu silicide along with voids, and also with a secondary planar precipitate of unknown composition. Here we report the results of investigations of the sense of the strain fields about the large (~100 nm) silicide precipitates, and further analysis of the small (~10-20 nm) planar precipitates.Numerous dark field images were analyzed in accordance with Ashby and Brown's criteria for determining the sense of the strain fields about precipitates. While the situation is complicated by the presence of dislocations and secondary precipitates, micrographs like those shown in Fig. 1(a) and 1(b) tend to show anomalously wide strain fields with the dark side on the side of negative g, indicating the strain fields about the silicide precipitates are vacancy in nature. This is in conflict with information reported on the η'' phase (the Cu silicide phase presumed to precipitate within the bulk) whose interstitial strain field is considered responsible for the interstitial Si atoms which cause the bounding dislocation to expand during star colony growth.

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Shock consolidation of Ni-Ti alloy powder

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100143730 ◽

1986 ◽

Vol 44 ◽

pp. 430-431

Author(s):

Naresh N. Thadhani ◽

Thad Vreeland ◽

Thomas J. Ahrens

Keyword(s):

Alloy Powder ◽

Amorphous Material ◽

Ti Alloy ◽

Two Phase ◽

Near Surface ◽

Optical Micrograph ◽

Shock Compaction ◽

Powder Particles ◽

Ti Powder ◽

Rapidly Solidified

A spherically-shaped, microcrystalline Ni-Ti alloy powder having fairly nonhomogeneous particle size distribution and chemical composition was consolidated with shock input energy of 316 kJ/kg. In the process of consolidation, shock energy is preferentially input at particle surfaces, resulting in melting of near-surface material and interparticle welding. The Ni-Ti powder particles were 2-60 μm in diameter (Fig. 1). About 30-40% of the powder particles were Ni-65wt% and balance were Ni-45wt%Ti (estimated by EMPA).Upon shock compaction, the two phase Ni-Ti powder particles were bonded together by the interparticle melt which rapidly solidified, usually to amorphous material. Fig. 2 is an optical micrograph (in plane of shock) of the consolidated Ni-Ti alloy powder, showing the particles with different etching contrast.

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Preparation of cross-sectional samples for near-surface TEM studies

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s042482010012669x ◽

1987 ◽

Vol 45 ◽

pp. 380-381

Author(s):

R.C. Dickenson ◽

K.R. Lawless

Keyword(s):

Standard Sample ◽

Surface Region ◽

Specimen Preparation ◽

Thick Sheet ◽

Drill Bit ◽

Sample Holder ◽

Metal Interface ◽

Cross Sectional ◽

Near Surface ◽

Cold Worked

In thermal oxidation studies, the structure of the oxide-metal interface and the near-surface region is of great importance. A technique has been developed for constructing cross-sectional samples of oxidized aluminum alloys, which reveal these regions. The specimen preparation procedure is as follows: An ultra-sonic drill is used to cut a 3mm diameter disc from a 1.0mm thick sheet of the material. The disc is mounted on a brass block with low-melting wax, and a 1.0mm hole is drilled in the disc using a #60 drill bit. The drill is positioned so that the edge of the hole is tangent to the center of the disc (Fig. 1) . The disc is removed from the mount and cleaned with acetone to remove any traces of wax. To remove the cold-worked layer from the surface of the hole, the disc is placed in a standard sample holder for a Tenupol electropolisher so that the hole is in the center of the area to be polished.

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Near-Surface Aggregation of Sn In Heavily Sn-Doped GaAs Films Grown By Molecular Beam Epitaxy

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100118710 ◽

1985 ◽

Vol 43 ◽

pp. 368-369

Author(s):

S. H. Chen

Keyword(s):

Molecular Beam Epitaxy ◽

Cross Section ◽

Electron Spectroscopy ◽

Molecular Beam ◽

Surface Segregation ◽

Secondary Ion Mass Spectrometry ◽

Specimen Preparation ◽

Near Surface ◽

Gaas Films ◽

Secondary Ion

Sn has been used extensively as an n-type dopant in GaAs grown by molecular-beam epitaxy (MBE). The surface accumulation of Sn during the growth of Sn-doped GaAs has been observed by several investigators. It is still not clear whether the accumulation of Sn is a kinetically hindered process, as proposed first by Wood and Joyce, or surface segregation due to thermodynamic factors. The proposed donor-incorporation mechanisms were based on experimental results from such techniques as secondary ion mass spectrometry, Auger electron spectroscopy, and C-V measurements. In the present study, electron microscopy was used in combination with cross-section specimen preparation. The information on the morphology and microstructure of the surface accumulation can be obtained in a fine scale and may confirm several suggestions from indirect experimental evidence in the previous studies.

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Specimen Preparation of Near Surface Ion Irradiated Samples

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100117820 ◽

1985 ◽

Vol 43 ◽

pp. 170-171

Author(s):

K. F. Russell ◽

L. L. Horton

Keyword(s):

Radiation Damage ◽

Heavy Ions ◽

Target Material ◽

Metal Alloys ◽

Specimen Surface ◽

Specimen Preparation ◽

Particle Accelerators ◽

Near Surface ◽

Graaff Accelerator ◽

Van De Graaff

Beams of heavy ions from particle accelerators are used to produce radiation damage in metal alloys. The damaged layer extends several microns below the surface of the specimen with the maximum damage and depth dependent upon the energy of the ions, type of ions, and target material. Using 4 MeV heavy ions from a Van de Graaff accelerator causes peak damage approximately 1 μm below the specimen surface. To study this area, it is necessary to remove a thickness of approximately 1 μm of damaged metal from the surface (referred to as “sectioning“) and to electropolish this region to electron transparency from the unirradiated surface (referred to as “backthinning“). We have developed electropolishing techniques to obtain electron transparent regions at any depth below the surface of a standard TEM disk. These techniques may be applied wherever TEM information is needed at a specific subsurface position.

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Comparison of Ion-Milling Techniques For Cross-Sectional TEM of Semiconductors

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100117807 ◽

1985 ◽

Vol 43 ◽

pp. 166-167

Author(s):

Julia T. Luck ◽

C. W. Boggs ◽

S. J. Pennycook

Keyword(s):

Analytical Techniques ◽

Sample Surface ◽

Ion Milling ◽

Cross Sectional ◽

Reliable Technique ◽

Near Surface ◽

Transmission Electron ◽

Thin Region ◽

Transient Thermal

The use of cross-sectional Transmission Electron Microscopy (TEM) has become invaluable for the characterization of the near-surface regions of semiconductors following ion-implantation and/or transient thermal processing. A fast and reliable technique is required which produces a large thin region while preserving the original sample surface. New analytical techniques, particularly the direct imaging of dopant distributions, also require good thickness uniformity. Two methods of ion milling are commonly used, and are compared below. The older method involves milling with a single gun from each side in turn, whereas a newer method uses two guns to mill from both sides simultaneously.

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Preparation of Backthinned Ceramic Specimens

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100117881 ◽

1985 ◽

Vol 43 ◽

pp. 182-183

Author(s):

A. T. Fisher ◽

P. Angelini

Keyword(s):

Electron Microscopy ◽

Analytical Electron Microscopy ◽

Vacuum System ◽

Back Surface ◽

Surface Microstructure ◽

Ion Milling ◽

Near Surface ◽

Depth Profiles ◽

Analytical Electron ◽

Ion Implanted

Analytical electron microscopy (AEM) of the near surface microstructure of ion implanted ceramics can provide much information about these materials. Backthinning of specimens results in relatively large thin areas for analysis of precipitates, voids, dislocations, depth profiles of implanted species and other features. One of the most critical stages in the backthinning process is the ion milling procedure. Material sputtered during ion milling can redeposit on the back surface thereby contaminating the specimen with impurities such as Fe, Cr, Ni, Mo, Si, etc. These impurities may originate from the specimen, specimen platform and clamping plates, vacuum system, and other components. The contamination may take the form of discrete particles or continuous films [Fig. 1] and compromises many of the compositional and microstructural analyses. A method is being developed to protect the implanted surface by coating it with NaCl prior to backthinning. Impurities which deposit on the continuous NaCl film during ion milling are removed by immersing the specimen in water and floating the contaminants from the specimen as the salt dissolves.

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The Effects of Ion Implantation on the Surface Features of Inconel 600

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100118333 ◽

1985 ◽

Vol 43 ◽

pp. 288-289

Author(s):

John D. Rubio

Keyword(s):

Grain Boundary ◽

Ion Implantation ◽

Nuclear Power ◽

Power Plants ◽

Surface Region ◽

Selective Dissolution ◽

Boundary Region ◽

Near Surface ◽

Inconel 600 ◽

Steam Generator Tubing

The degradation of steam generator tubing at nuclear power plants has become an important problem for the electric utilities generating nuclear power. The material used for the tubing, Inconel 600, has been found to be succeptible to intergranular attack (IGA). IGA is the selective dissolution of material along its grain boundaries. The author believes that the sensitivity of Inconel 600 to IGA can be minimized by homogenizing the near-surface region using ion implantation. The collisions between the implanted ions and the atoms in the grain boundary region would displace the atoms and thus effectively smear the grain boundary.To determine the validity of this hypothesis, an Inconel 600 sample was implanted with 100kV N2+ ions to a dose of 1x1016 ions/cm2 and electrolytically etched in a 5% Nital solution at 5V for 20 seconds. The etched sample was then examined using a JEOL JSM25S scanning electron microscope.

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Analytical Electron Microscopy of Ion-Implanted Metals

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s042482010011831x ◽

1985 ◽

Vol 43 ◽

pp. 282-285

Author(s):

D.I. Potter ◽

M. Ahmed ◽

K. Ruffing

Keyword(s):

Electron Microscopy ◽

Ion Implantation ◽

Friction And Wear ◽

Analytical Electron Microscopy ◽

Chemical Compositions ◽

Surface Chemical ◽

Near Surface ◽

The Past ◽

Analytical Electron ◽

Property Changes

Ion implantation, used extensively for the past decade in fabricating semiconductor devices, now provides a unique means for altering the near-surface chemical compositions and microstructures of metals. These alterations often significantly improve physical properties that depend on the surface of the material; for example, catalysis, corrosion, oxidation, hardness, friction and wear. Frequently the mechanisms causing these beneficial alterations and property changes remain obscure and much of the current research in the area of ion implantation metallurgy is aimed at identifying such mechanisms. Investigators thus confront two immediate questions: To what extent is the chemical composition changed by implantation? What is the resulting microstructure? These two questions can be investigated very fruitfully with analytical electron microscopy (AEM), as described below.

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