Interfacial behavior in the brazing of silicon nitride joint using a Nb-foil interlayer

This work focuses on various aspects of diffusion bonding silicon nitride to Mo and Ti using a Cu-foil interlayer. Si3N4/Cu/Ti/Cu/Si3N4 and Si3N4/Cu/Mo/Cu/Si3N4 combinations have been diffusion joined at temperatures ranging from 950 to 1150 °C using different holding times in Ar. The results show that Si3N4 could not be bonded to Mo at temperature lower than 1100 °C even for holding times of 60 minutes, however, successful joining is achieved at 1150 °C. On the other hand, successful joining is accomplished at 1050 and 1100 °C for a Si3N4/Cu/Ti/Cu/Si3N4 sample. In the Si3N4/Cu/Ti system, joining occurs by the formation of a reactive interface with several reaction products on the metal side of the joint. All the silicon nitride samples have joined to titanium with no several interfacial cracking and porosity at the interface. The results corresponding to the Si3N4/Cu/Mo system show that a higher temperature is required to join the materials compared with the Si3N4/Cu/Ti system, since the formation of liquid produced by the interaction of Cu with Ti and Si promotes bonding and the high affinity of Ti for Si results in rapid interface formation.

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Joining of silicon nitride with a titanium foil interlayer

Materials Science and Engineering A ◽

10.1016/s0921-5093(02)00892-4 ◽

2003 ◽

Vol 352 (1-2) ◽

pp. 169-178 ◽

Cited By ~ 28

Author(s):

Jose Lemus ◽

Robin A.L Drew

Keyword(s):

Silicon Nitride ◽

Titanium Foil ◽

Foil Interlayer

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Mechanical properties of silicon nitride joints using a Ti-foil interlayer

Materials Letters ◽

10.1016/s0167-577x(04)00133-8 ◽

2004 ◽

Author(s):

J LEMUSRUIZ

Keyword(s):

Mechanical Properties ◽

Silicon Nitride ◽

Foil Interlayer

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Lattice Imaging of Grain Boundaries in Ceramics

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100078171 ◽

1977 ◽

Vol 35 ◽

pp. 114-115

Author(s):

D. R. Clarke ◽

G. Thomas

Keyword(s):

Mechanical Properties ◽

High Temperature ◽

Silicon Nitride ◽

Grain Boundaries ◽

High Temperature Strength ◽

Current Interest ◽

Lattice Imaging ◽

Special Significance ◽

Structural Applications ◽

Refractory Ceramics

Grain boundaries have long held a special significance to ceramicists. In part, this has been because it has been impossible until now to actually observe the boundaries themselves. Just as important, however, is the fact that the grain boundaries and their environs have a determing influence on both the mechanisms by which powder compaction occurs during fabrication, and on the overall mechanical properties of the material. One area where the grain boundary plays a particularly important role is in the high temperature strength of hot-pressed ceramics. This is a subject of current interest as extensive efforts are being made to develop ceramics, such as silicon nitride alloys, for high temperature structural applications. In this presentation we describe how the techniques of lattice fringe imaging have made it possible to study the grain boundaries in a number of refractory ceramics, and illustrate some of the findings.

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TEM Studies of Grain Boundary Films in Si3N4 Ceramics

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100088968 ◽

1991 ◽

Vol 49 ◽

pp. 930-931

Author(s):

H.-J. Kleebe ◽

J.S. Vetrano ◽

J. Bruley ◽

M. Rühle

Keyword(s):

Mechanical Properties ◽

High Temperature ◽

Silicon Nitride ◽

Hot Isostatic Pressing ◽

Amorphous Film ◽

Liquid Phase Sintering ◽

Second Phase ◽

High Temperature Mechanical Properties ◽

Triple Points ◽

Boundary Films

It is expected that silicon nitride based ceramics will be used as high-temperature structural components. Though much progress has been made in both processing techniques and microstructural control, the mechanical properties required have not yet been achieved. It is thought that the high-temperature mechanical properties of Si3N4 are limited largely by the secondary glassy phases present at triple points. These are due to various oxide additives used to promote liquid-phase sintering. Therefore, many attempts have been performed to crystallize these second phase glassy pockets in order to improve high temperature properties. In addition to the glassy or crystallized second phases at triple points a thin amorphous film exists at two-grain junctions. This thin film is found even in silicon nitride formed by hot isostatic pressing (HIPing) without additives. It has been proposed by Clarke that an amorphous film can exist at two-grain junctions with an equilibrium thickness.

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Electron Microscopy of Silicon Nitride-Based Ceramics

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100088944 ◽

1991 ◽

Vol 49 ◽

pp. 926-927

Author(s):

Gareth Thomas

Keyword(s):

Electron Microscopy ◽

High Temperature ◽

Silicon Nitride ◽

World Wide ◽

Sintering Temperature ◽

Liquid Phase Sintering ◽

High Temperature Strength ◽

Sintering Additives ◽

Glass Forming ◽

Dense Product

Silicon nitride and silicon nitride based-ceramics are now well known for their potential as hightemperature structural materials, e.g. in engines. However, as is the case for many ceramics, in order to produce a dense product, sintering additives are utilized which allow liquid-phase sintering to occur; but upon cooling from the sintering temperature residual intergranular phases are formed which can be deleterious to high-temperature strength and oxidation resistance, especially if these phases are nonviscous glasses. Many oxide sintering additives have been utilized in processing attempts world-wide to produce dense creep resistant components using Si3N4 but the problem of controlling intergranular phases requires an understanding of the glass forming and subsequent glass-crystalline transformations that can occur at the grain boundaries.

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Examination of Fracture Interfaces in Silicon Nitride

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100113925 ◽

1975 ◽

Vol 33 ◽

pp. 60-61

Author(s):

Nancy J. Tighe

Keyword(s):

Silicon Nitride ◽

Grain Boundary ◽

Crack Growth ◽

Subcritical Crack Growth ◽

Slow Crack Growth ◽

Ceramic Materials ◽

Grain Boundary Sliding ◽

Boundary Phase ◽

Turbine Engines ◽

Boundary Sliding

Silicon nitride is one of the ceramic materials being considered for the components in gas turbine engines which will be exposed to temperatures of 1000 to 1400°C. Test specimens from hot-pressed billets exhibit flexural strengths of approximately 50 MN/m2 at 1000°C. However, the strength degrades rapidly to less than 20 MN/m2 at 1400°C. The strength degradition is attributed to subcritical crack growth phenomena evidenced by a stress rate dependence of the flexural strength and the stress intensity factor. This phenomena is termed slow crack growth and is associated with the onset of plastic deformation at the crack tip. Lange attributed the subcritical crack growth tb a glassy silicate grain boundary phase which decreased in viscosity with increased temperature and permitted a form of grain boundary sliding to occur.

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Tensile Creep of Y-Si3N4: II. Cavitation

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100089172 ◽

1991 ◽

Vol 49 ◽

pp. 972-973 ◽

Cited By ~ 1

Author(s):

B. J. Hockey ◽

S. M. Wiederhorn

Keyword(s):

Silicon Nitride ◽

Creep Rupture ◽

Tensile Creep ◽

Sintering Aids ◽

Microstructural Changes

ATEM has been used to characterize three different silicon nitride materials after tensile creep in air at 1200 to 1400° C. In Part I, the microstructures and microstructural changes that occur during testing were described, and consistent with that description the designations and sintering aids for these materials were: W/YAS, a SiC whisker reinforced Si3N4 processed with yttria (6w/o) and alumina (1.5w/o); YAS, Si3N4 processed with yttria (6 w/o) and alumina (1.5w/o); and YS, Si3N4 processed with yttria (4.0 w/o). This paper, Part II, addresses the interfacial cavitation processes that occur in these materials and which are ultimately responsible for creep rupture.

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