Control of nanoscale material removal in diamond polishing by using iron at low temperature

2020 ◽  
Vol 278 ◽  
pp. 116521 ◽  
Author(s):  
Ning Yang ◽  
Wen Huang ◽  
Dajiang Lei
Keyword(s):  
Low Temperature ◽  
Material Removal ◽  
Nanoscale Material ◽  
Diamond Polishing

Numerical Investigation of the Damage Evolution in Vibration Assisted Nano Impact Machining by Loose Abrasives With Different Operating Parameters

2018 ◽  
Author(s):  
Nick H. Duong ◽  
J. Ma ◽  
Shuting Lei
Keyword(s):  
Material Removal ◽  
Frictional Coefficient ◽  
Material Model ◽  
Impact Angle ◽  
Ductile Material ◽  
Nanoscale Material ◽  
Impact Speed ◽  
Atomic Force ◽  
Afm Probe ◽  
The Impact

In this paper, the commercial FEM software package Abaqus is employed to model a novel nanomachining process, in which an atomic force microscope (AFM) is used as a platform and the nano abrasives injected in slurry between the workpiece and the vibrating AFM probe impact the workpiece and result in nanoscale material removal. Diamond particles are used as loose abrasives. The ductile material model is used to describe the behavior of the silicon workpiece. The effects of impact speed, impact angle, and the frictional coefficient between the workpiece and abrasives on material removal mechanism are investigated. It is found that the impact speed, impact angle, and frictional coefficient between the silicon workpiece and nanoabrasives have big influence on material removal volume in this novel nanomachining process.

Strained-Si-on-Insulator (SSOI) and SiGe-on-Insulator (SGOI): Fabrication Obstacles and Solutions

2002 ◽  
Vol 745 ◽  
Author(s):  
Gianni Taraschi ◽  
Arthur J. Pitera ◽  
Lisa M. McGill ◽  
Zhi-Yuan Cheng ◽  
Minjoo L. Lee ◽  
...  
Keyword(s):  
Low Temperature ◽  
Wafer Bonding ◽  
Material Removal ◽  
High Mobility ◽  
Layer Transfer ◽  
Strained Si ◽  
Precise Control ◽  
Bonding Structure ◽  
Selective Etch ◽  
Final Layer

ABSTRACTAdvanced CMOS substrates composed of ultra-thin strained-Si and SiGe-on-insulator were fabricated, combining both the benefits of high-mobility strained-Si and SOI. Our pioneering method employed wafer bonding of SiGe virtual substrates (with strained-Si layers) to oxidized handle wafers. Layer transfer onto insulating handle wafers can be accomplished using grind-etchback or delamination via implantation. Both methods were found to produce a rough transferred layer, but polishing is unacceptable due to non-uniform material removal across the wafer and the lack of precise control over the final layer thickness. To solve these problems, a strained-Si stop layer was incorporated into the bonding structure. After layer transfer, excess SiGe was removed using a selective etch process, stopping on the strained-Si. Within the context of ultra-thin SSOI and SGOI fabrication, this paper describes recent improvements including metastable stop layers, low temperature wafer bonding, and improved selective SiGe removal.

Grindability of Single Crystal Sapphire in Medical Use and the Scheme of Forming Highly Precise Spherical Heads

2011 ◽  
Vol 496 ◽  
pp. 13-18
Author(s):  
Otar Mgaloblishvili ◽  
Rauli Turmanidze ◽  
David Butskhrikidze ◽  
Mariam Beridze
Keyword(s):  
Surface Layer ◽  
Low Temperature ◽  
Single Crystal ◽  
Material Removal Rate ◽  
Material Removal ◽  
Removal Rate ◽  
Precision Grinding ◽  
Hip Joints ◽  
Grinding Conditions ◽  
Single Crystal Sapphire

The scale of influence of the single crystal sapphire crystallographic plane orientation and grinding conditions on the material removal rate, surface finish and the state of sub-surface layer have been studied under Low-Temperature Precision Grinding (LPG). The schemes of forming partial spherical heads for human hip joints endoprostheses are considered and elaborated. The possible versions of forming the spherical heads of endoprosthesis based on the novelties in kinematics and the mode of material removal are discussed.

Development of Nanomachining Mechanism Based on Molecular Dynamics Simulation

2015 ◽  
Vol 667 ◽  
pp. 41-46
Author(s):  
Peng Yue Zhao ◽  
Yong Bo Guo ◽  
Guo Kun Qu
Keyword(s):  
Molecular Dynamics ◽  
Material Removal ◽  
Polycrystalline Material ◽  
Molecular Dynamics Method ◽  
Dynamics Simulation ◽  
Mechanism Study ◽  
Nanoscale Material ◽  
Plastic Materials ◽  
Nanometric Machining ◽  
Dynamics Method

Nanomachining technology has broad application prospects and molecular dynamics method is an important research tools for studying nanoscale material removal mechanism. This paper is focused on the analysis of basic principle of molecular dynamics method and the progress of nanomachining model. The nanomachining mechanism of single crystalline brittle materials and plastic materials are investigated completely, micro-nanomachining mechanism of polycrystalline material is also summarized, The challenges and future development of the nanometric machining mechanism study are also discussed.

Research on Nanoscale Material Removal Process Using Atomic Force Microscopy

2007 ◽  
Vol 359-360 ◽  
pp. 269-273 ◽  
Author(s):  
Fei Hu Zhang ◽  
Hua Li Zhang ◽  
Yong Da Yan ◽  
Jing He Wang
Keyword(s):  
Material Removal ◽  
Normal Load ◽  
Machining Process ◽  
Surface Material ◽  
Cutting Depth ◽  
Nanoscale Material ◽  
Force Microscopy ◽  
Atomic Force ◽  
Experimental Parameters ◽  
Blade Machining

Nanomachining tests have been conducted on single-crystal Al using atomic force microscope to simulate single-blade machining process of single gain. The influences of nanomachining experimental parameters (lateral feed and velocity) on the properties of engineering surface, material removal and chip formation were studied. Results indicated that the cutting depth of nanomachined surface increased as the lateral feed decreased. Insensitivity of cutting depth to velocity at same normal load was revealed. The different chip behaviors of nanomachined surface were investigated through scanning electron microscope (SEM). Results indicated that different lateral feeds caused different chip behaviors. Three typical chip behaviors were characterized as the lateral feed increased. In addition, the chip behavior and the volume of material removed were observed having no evident linear transformation with the evolution of the velocity by SEM graphics. Furthermore, it was concluded from the chip behaviors in nanomachining process that the material at high loads was removed by plastic deformation with no fracture or crack happened.

Exsolution and inversion in pigeonite from the Whin Sill, Northern England

1978 ◽  
Vol 36 (1) ◽  
pp. 474-475
Author(s):  
P.P.K. Smith
Keyword(s):  
High Temperature ◽  
Low Temperature ◽  
Homogeneous Nucleation ◽  
Silicate Mineral ◽  
Antiphase Boundaries ◽  
Two Phase ◽  
Primitive Form ◽  
The Core ◽  
Nucleation Mechanisms ◽  
And Inversion

Grains of pigeonite, a calcium-poor silicate mineral of the pyroxene group, from the Whin Sill dolerite have been ion-thinned and examined by TEM. The pigeonite is strongly zoned chemically from the composition Wo8En64FS28 in the core to Wo13En34FS53 at the rim. Two phase transformations have occurred during the cooling of this pigeonite:- exsolution of augite, a more calcic pyroxene, and inversion of the pigeonite from the high- temperature C face-centred form to the low-temperature primitive form, with the formation of antiphase boundaries (APB's). Different sequences of these exsolution and inversion reactions, together with different nucleation mechanisms of the augite, have created three distinct microstructures depending on the position in the grain.In the core of the grains small platelets of augite about 0.02μm thick have farmed parallel to the (001) plane (Fig. 1). These are thought to have exsolved by homogeneous nucleation. Subsequently the inversion of the pigeonite has led to the creation of APB's.

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