scholarly journals Simulation of phase evolution in a Zr-based glass forming alloy during multiple laser remelting

2021 ◽  
Author(s):  
Johan Lindwall ◽  
Anders Ericsson ◽  
Jithin James Marattukalam ◽  
Carl-Johan Hassila ◽  
Dennis Karlsson ◽  
...  
Keyword(s):  
Phase Evolution ◽  
Laser Remelting ◽  
Glass Forming

Influence of Glass Forming Ability of Alloy on Crystallization in Heat-Affected Zone by Laser Remelting Zr Based Bulk Metallic Glasses

2010 ◽  
Vol 37 (11) ◽  
pp. 2931-2936 ◽  
Author(s):  
刘伟伟 Liu Weiwei ◽  
林鑫 Lin Xin ◽  
杨高林 Yang Gaolin ◽  
杨海欧 Yang Haiou ◽  
黄卫东 Huang Weidong ◽  
...  
Keyword(s):  
Metallic Glasses ◽  
Heat Affected Zone ◽  
Bulk Metallic Glasses ◽  
Glass Forming Ability ◽  
Laser Remelting ◽  
Glass Forming

scholarly journals Structural and Phase Evolution upon Annealing of Fe76Si9−xB10P5Mox (x = 0, 1, 2 and 3) Alloys

Metals ◽  
2020 ◽  
Vol 10 (7) ◽  
pp. 881
Author(s):  
Darling Perea ◽  
Carolina Parra ◽  
Parthiban Ramasamy ◽  
Mihai Stoica ◽  
Jürgen Eckert ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Amorphous Alloys ◽  
Structural Evolution ◽  
Supercooled Liquid ◽  
Phase Evolution ◽  
Supercooled Liquid Region ◽  
Liquid Region ◽  
Glass Forming ◽  
Different Temperatures ◽  
Thermal Stability Of

Alloying elements play an important role in adjusting the magnetic and thermal properties of Fe-based amorphous alloys. In this work, the effect of Mo addition on the thermal stability, structural evolution, and magnetic properties of Fe76Si9B10P5 metallic glass was studied. The study revealed that the substitution of a small amount of Mo (1 at.%) for Si enhances the glass-forming ability (GFA) but reduces the thermal stability of the alloy, causing a reduction of the supercooled liquid region. Substitution of up to 3 at.% Mo for Si lowers the Curie temperature from 677 to 550 K and the saturation magnetization drops from 160 to 138 Am2/kg. The structural evolution was evaluated by annealing the glassy samples at different temperatures, revealing that the crystallization proceeds in multiple steps, beginning with the formation of different iron borides (FeB, Fe2B, FeB2 and Fe23B6) followed by transformation to a mixture of more stable phases.

Electron Microscopy of Silicon Nitride-Based Ceramics

1991 ◽  
Vol 49 ◽  
pp. 926-927
Author(s):  
Gareth Thomas
Keyword(s):  
Electron Microscopy ◽  
High Temperature ◽  
Silicon Nitride ◽  
World Wide ◽  
Sintering Temperature ◽  
Liquid Phase Sintering ◽  
High Temperature Strength ◽  
Sintering Additives ◽  
Glass Forming ◽  
Dense Product

Silicon nitride and silicon nitride based-ceramics are now well known for their potential as hightemperature structural materials, e.g. in engines. However, as is the case for many ceramics, in order to produce a dense product, sintering additives are utilized which allow liquid-phase sintering to occur; but upon cooling from the sintering temperature residual intergranular phases are formed which can be deleterious to high-temperature strength and oxidation resistance, especially if these phases are nonviscous glasses. Many oxide sintering additives have been utilized in processing attempts world-wide to produce dense creep resistant components using Si3N4 but the problem of controlling intergranular phases requires an understanding of the glass forming and subsequent glass-crystalline transformations that can occur at the grain boundaries.

The effect of an aluminum heat-sink layer on the laser-induced amorphization of SiOx/TeGeSn/SiOx phase-change recording films

1989 ◽  
Vol 47 ◽  
pp. 574-575
Author(s):  
Matthew R. Libera ◽  
Martin Chen
Keyword(s):  
Thin Film ◽  
Phase Change ◽  
Heat Sink ◽  
Multilayer Film ◽  
Glassy Phase ◽  
Film Structure ◽  
Glass Forming ◽  
Active Storage ◽  
Dielectric Layers ◽  
Amorphous States

Phase-change erasable optical storage is based on the ability to switch a micron-sized region of a thin film between the crystalline and amorphous states using a diffraction-limited laser as a heat source. A bit of information can be represented as an amorphous spot on a crystalline background, and the two states can be optically identified by their different reflectivities. In a typical multilayer thin-film structure the active (storage) layer is sandwiched between one or more dielectric layers. The dielectric layers provide physical containment and act as a heat sink. A viable phase-change medium must be able to quench to the glassy phase after melting, and this requires proper tailoring of the thermal properties of the multilayer film. The present research studies one particular multilayer structure and shows the effect of an additional aluminum layer on the glass-forming ability.

Crystallization in Al 88 RE 8 Ni 4 glass-forming alloys

2002 ◽  
Vol 82 (12) ◽  
pp. 2483-2497 ◽  
Author(s):  
T. K. Croat ◽  
A. K. Gangopadhyay ◽  
K. F. K Elton
Keyword(s):  
Glass Forming

Study of the ?-Mechanical Relaxation in Molecular Glass-Forming Liquids

1997 ◽  
Vol 7 (11) ◽  
pp. 1635-1650 ◽  
Author(s):  
A. Faivre ◽  
L. David ◽  
J. Perez
Keyword(s):  
Mechanical Relaxation ◽  
Glass Forming ◽  
Molecular Glass

Chemical Availability of Bromide Dictates CsPbBr3 Nanocrystal Growth

2019 ◽  
Author(s):  
Je-Ruei Wen ◽  
Benjamin Roman ◽  
Freddy Rodriguez Ortiz ◽  
Noel Mireles Villegas ◽  
Nicholas Porcellino ◽  
...  
Keyword(s):  
Reaction Time ◽  
Growth Mechanism ◽  
Chemical Control ◽  
Critical Role ◽  
Phase Evolution ◽  
Detailed Understanding ◽  
Semiconductor Nanocrystal ◽  
Nanocrystal Growth ◽  
Chemical Availability

Lack of detailed understanding of the growth mechanism of CsPbBr3 nanocrystals has hindered sophisticated morphological and chemical control of this important emerging optoelectronic material. Here, we have elucidated the growth mechanism by slowing the reaction kinetics. When 1-bromohexane is used as an alternative halide source, bromide is slowly released into the reaction mixture, extending the reaction time from ~3 seconds to greater than 20 minutes. This enables us to monitor the phase evolution of products over the course of reaction, revealing that CsBr is the initial species formed, followed by Cs4PbBr6, and finally CsPbBr3. Further, formation of monodisperse CsBr nanocrystals is demonstrated in a bromide-deficient and lead-abundant solution. The CsBr can only be transformed into CsPbBr3 nanocubes if additional bromide is added. Our results indicate a fundamentally different growth mechanism for CsPbBr3 in comparison with more established semiconductor nanocrystal systems and reveal the critical role of the chemical availability of bromide for the growth reactions.<br>

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