Effect of cold deformation on the recrystallization behavior of FePd alloy at the ordering temperature using electron backscatter diffraction

2014 ◽  
Vol 94 ◽  
pp. 138-148 ◽  
Author(s):  
Hung-Pin Lin ◽  
Yen-Chun Chen ◽  
Delphic Chen ◽  
Jui-Chao Kuo
Keyword(s):  
Electron Backscatter Diffraction ◽  
Cold Deformation ◽  
Recrystallization Behavior ◽  
Electron Backscatter ◽  
Backscatter Diffraction

Experimental Study on the Influence of Grain Boundaries on the Subdivision Behaviour of Al-3%Mg Polycrystals during Cold Deformation Using Electron Backscatter Diffraction

2005 ◽  
Vol 495-497 ◽  
pp. 1025-1030
Author(s):  
Steven Van Boxel ◽  
Marc Seefeldt ◽  
Bert Verlinden ◽  
Paul van Houtte
Keyword(s):  
Grain Boundary ◽  
Electron Backscatter Diffraction ◽  
Cold Deformation ◽  
Triple Junctions ◽  
Boundary Segment ◽  
Strain Compatibility ◽  
Stress Equilibrium ◽  
Electron Backscatter ◽  
Average Orientation ◽  
Backscatter Diffraction

The substructure of a single grain in an electron backscatter diffraction (EBSD) data map is studied, focusing on the influence of the grain boundary configuration on the misorientation to the average grain orientation of data points close to the grain boundary. For most grain boundary segments a certain degree of linking between the misorientations to the average orientation of the grain exists and large deviations from the average orientation of the grain are observed close to the triple junctions of the boundary segments. Changes of the misorientation over one boundary segment are analysed and possible explanations for these variations are discussed. It is suggested that the variations of the misorientation over the boundary segment can be attributed to the requirements of stress equilibrium and strain compatibility. Also the tendency of the grain boundary to lower its surface energy might have a significant influence on the misorientation profile and therefore on the subdivision behaviour of the grains.

Cross Section Analysis of Cu Filled TSVs Based on High Throughput Plasma-FIB Milling

2012 ◽  
Author(s):  
Frank Altmann ◽  
Jens Beyersdorfer ◽  
Jan Schischka ◽  
Michael Krause ◽  
German Franz ◽  
...  
Keyword(s):  
High Resolution ◽  
Cross Section ◽  
High Throughput ◽  
Cross Sections ◽  
Electron Backscatter Diffraction ◽  
Grain Structure ◽  
Electron Backscatter ◽  
Section Surface ◽  
Backscatter Diffraction ◽  
Section Analysis

Abstract In this paper the new Vion™ Plasma-FIB system, developed by FEI, is evaluated for cross sectioning of Cu filled Through Silicon Via (TSV) interconnects. The aim of the study presented in this paper is to evaluate and optimise different Plasma-FIB (P-FIB) milling strategies in terms of performance and cross section surface quality. The sufficient preservation of microstructures within cross sections is crucial for subsequent Electron Backscatter Diffraction (EBSD) grain structure analyses and a high resolution interface characterisation by TEM.

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