Improvement of reliability of polymer nanocomposite based transparent memory device by oxygen vacancy rich ZnO nanorods

2016 ◽  
Vol 164 ◽  
pp. 53-58 ◽  
Author(s):  
Snigdha Bhattacharjee ◽  
Pranab Kumar Sarkar ◽  
Nandini Roy ◽  
Asim Roy
Keyword(s):  
Oxygen Vacancy ◽  
Zno Nanorods ◽  
Polymer Nanocomposite ◽  
Memory Device

scholarly journals Oxygen Vacancy Kinetics Mechanism of the Negative Forming-Free Process and Multilevel Resistance Based on Hafnium Oxide RRAM

2019 ◽  
Vol 2019 ◽  
pp. 1-9 ◽  
Author(s):  
Mingqun Qi ◽  
Cuiping Guo ◽  
Meihan Zeng
Keyword(s):  
Oxygen Vacancy ◽  
Hafnium Oxide ◽  
Memory Performance ◽  
Random Access ◽  
Memory Device ◽  
Electrical Performance ◽  
Forming Process ◽  
Conductive Filament ◽  
Functional Layer ◽  
Free Process

Switching between high resistance states and low resistance states in a resistive random access memory device mainly depends on the formation and fracture of conductive filaments. However, the randomness of the conductive filament growth and the potential breakdown of the large voltage in the forming process will lead to unstable resistive switching and memory performance. We studied the possible natural forming process of conductive filaments for intrinsic defects under the influence of top electrode material based on the structure of W/HfO2-x/Pt. Such a simple device shows long retention time and great endurance cycles. The dendritic oxygen vacancy (VO) conductive filament model was constructed, and the dynamic VO migration under directional external bias was described according to the characteristic electrical performance. In addition, we also explored the relationship between the multilevel resistance and the evolution of a dendritic VO conductive filament, signifying the potential application of multilevel storage in the future. Furthermore, a Ag/HfO2-x/Ag selector was fabricated to assemble the memory device in wire connection which exhibits the potential of eliminating leaky current in the memory array. The connection also indicates that the fabrication process of the 1S1R structure can be simplified by using the same functional layer.

Oxygen vacancy mediated temperature dependent emission behavior of localized bound excitons in ZnO nanorods

2018 ◽  
Vol 195 ◽  
pp. 201-208 ◽  
Author(s):  
Xiangdong Meng ◽  
Yuxue Zhou ◽  
Xianghua Zeng ◽  
Xiaobing Chen ◽  
Yanqiu Chu
Keyword(s):  
Oxygen Vacancy ◽  
Zno Nanorods ◽  
Temperature Dependent ◽  
Emission Behavior

Effect of oxygen vacancy defect regeneration on photocatalytic properties of ZnO nanorods

2020 ◽  
Vol 126 (12) ◽  
Author(s):  
Fucheng Yu ◽  
Zhengyan Liu ◽  
Yuanmeng Li ◽  
Dongmei Nan ◽  
Bolong Wang ◽  
...  
Keyword(s):  
Oxygen Vacancy ◽  
Zno Nanorods ◽  
Vacancy Defect ◽  
Photocatalytic Properties ◽  
Effect Of Oxygen

scholarly journals Oxygen-vacancy-induced green emission and room-temperature ferromagnetism in Ni-doped ZnO nanorods

2009 ◽  
Vol 11 (6) ◽  
pp. 063009 ◽  
Author(s):  
Javed Iqbal ◽  
Baiqi Wang ◽  
Xiaofang Liu ◽  
Dapeng Yu ◽  
B He ◽  
...  
Keyword(s):  
Oxygen Vacancy ◽  
Room Temperature ◽  
Room Temperature Ferromagnetism ◽  
Zno Nanorods ◽  
Green Emission ◽  
Doped Zno

Effect of Cobalt Concentration and Oxygen Vacancy on Magnetism of Co Doped ZnO Nanorods

2016 ◽  
Vol 16 (3) ◽  
pp. 2719-2724 ◽  
Author(s):  
Congli Li ◽  
Ping Che ◽  
Changyan Sun ◽  
Wenjun Li
Keyword(s):  
Oxygen Vacancy ◽  
Zno Nanorods ◽  
Cobalt Concentration ◽  
Doped Zno ◽  
Co Doped

scholarly journals Cluster distribution for oxygen vacancy in Ti/HfO2/Pt resistive switching memory device

2015 ◽  
Vol 64 (20) ◽  
pp. 207302
Author(s):  
Jiang Ran ◽  
Du Xiang-Hao ◽  
Han Zu-Yin ◽  
Sun Wei-Deng
Keyword(s):  
Oxygen Vacancy ◽  
Resistive Switching ◽  
Memory Device ◽  
Resistive Switching Memory ◽  
Cluster Distribution ◽  
Switching Memory
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