Thermal response and correlation between mobility and kink effect in GaN HEMTs

2020 ◽  
Vol 219 ◽  
pp. 111148
Author(s):  
Mohammad A. Alim ◽  
S. Afrin ◽  
A.A. Rezazadeh ◽  
C. Gaquiere
2020 ◽  
pp. 1-8
Author(s):  
Jayjit Mukherjee ◽  
Amit Malik ◽  
Seema Vinayak ◽  
D. S. Rawal ◽  
Rajendra S. Dhaka
Keyword(s):  

Micromachines ◽  
2020 ◽  
Vol 11 (1) ◽  
pp. 76
Author(s):  
Huaixin Guo ◽  
Tangsheng Chen ◽  
Shang Shi

The thermal management and channel temperature evaluation of GaN power amplifiers are indispensable issues in engineering field. The transient thermal characteristics of pulse operated AlGaN/GaN high electron mobility transistors (HEMT) used in high power amplifiers are systematically investigated by using three-dimensional simulation with the finite element method. To improve the calculation accuracy, the nonlinear thermal conductivities and near-junction region of GaN chip are considered and treated appropriately in our numerical analysis. The periodic transient pulses temperature and temperature distribution are analyzed to estimate thermal response when GaN amplifiers are operating in pulsed mode with kilowatt-level power, and the relationships between channel temperatures and pulse width, gate structures, and power density of GaN device are analyzed. Results indicate that the maximal channel temperature and thermal impedance of device are considerably influenced by pulse width and power density effects, but the changes of gate fingers and gate width have no effect on channel temperature when the total gate width and active area are kept constant. Finally, the transient thermal response of GaN amplifier is measured using IR thermal photogrammetry, and the correctness and validation of the simulation model is verified. The study of transient simulation is demonstrated necessary for optimal designs of pulse-operated AlGaN/GaN HEMTs.


Micromachines ◽  
2018 ◽  
Vol 9 (11) ◽  
pp. 571 ◽  
Author(s):  
Shuman Mao ◽  
Yuehang Xu

The effect brought by the I–V kink effect on large signal performance of AlGaN/GaN high electron mobility transistors (HEMTs) was investigated in this paper. An improved compact model was proposed to accurately characterize the I–V kink effect. The bias dependence of the I–V kink effect has also been taken into consideration. AlGaN/GaN HEMTs with different gate width were utilized to validate the proposed model. Built on the proposed model, the effect brought by the I–V kink effect on large signal performance has been studied. Results show that the I–V kink effect will lead to the degradation of characteristics, including output power, gain, and power-added efficiency at the saturation region. Furthermore, the influence of the I–V kink effect was found to be related with the input power and the static bias point in this work. The time domain waveform and AC dynamic load line were used for validation of results based on simulation. The consequences of this paper will be useful for the optimization of practical circuit design.


2011 ◽  
Vol 32 (4) ◽  
pp. 482-484 ◽  
Author(s):  
Maojun Wang ◽  
Kevin J. Chen
Keyword(s):  

Author(s):  
P. Altuntas ◽  
N. Defrance ◽  
M. Lesecq ◽  
A. Agboton ◽  
R. Ouhachi ◽  
...  

2009 ◽  
Vol 30 (3) ◽  
pp. 209-212 ◽  
Author(s):  
R. Cuerdo ◽  
Y. Pei ◽  
Z. Chen ◽  
S. Keller ◽  
S.P. DenBaars ◽  
...  

1988 ◽  
Vol 102 ◽  
pp. 41
Author(s):  
E. Silver ◽  
C. Hailey ◽  
S. Labov ◽  
N. Madden ◽  
D. Landis ◽  
...  

The merits of microcalorimetry below 1°K for high resolution spectroscopy has become widely recognized on theoretical grounds. By combining the high efficiency, broadband spectral sensitivity of traditional photoelectric detectors with the high resolution capabilities characteristic of dispersive spectrometers, the microcalorimeter could potentially revolutionize spectroscopic measurements of astrophysical and laboratory plasmas. In actuality, however, the performance of prototype instruments has fallen short of theoretical predictions and practical detectors are still unavailable for use as laboratory and space-based instruments. These issues are currently being addressed by the new collaborative initiative between LLNL, LBL, U.C.I., U.C.B., and U.C.D.. Microcalorimeters of various types are being developed and tested at temperatures of 1.4, 0.3, and 0.1°K. These include monolithic devices made from NTD Germanium and composite configurations using sapphire substrates with temperature sensors fabricated from NTD Germanium, evaporative films of Germanium-Gold alloy, or material with superconducting transition edges. A new approache to low noise pulse counting electronics has been developed that allows the ultimate speed of the device to be determined solely by the detector thermal response and geometry. Our laboratory studies of the thermal and resistive properties of these and other candidate materials should enable us to characterize the pulse shape and subsequently predict the ultimate performance. We are building a compact adiabatic demagnetization refrigerator for conveniently reaching 0.1°K in the laboratory and for use in future satellite-borne missions. A description of this instrument together with results from our most recent experiments will be presented.


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