Design concept for wire-bonding reliability improvement by optimizing position in power devices

2006 ◽  
Vol 37 (3) ◽  
pp. 262-268 ◽  
Author(s):  
Masayasu Ishiko ◽  
Masanori Usui ◽  
Takashi Ohuchi ◽  
Mikio Shirai
2021 ◽  
Author(s):  
Syed Mohammad Adnan ◽  
Ahteshamul Haque ◽  
V S Bharath. K

2001 ◽  
Vol 32 (5-6) ◽  
pp. 543-546 ◽  
Author(s):  
F Kostrubiec ◽  
Z Lisik ◽  
R Pawlak ◽  
K Jakubowska ◽  
A Korbicki

Author(s):  
Wentao Qin ◽  
Tom Anderson ◽  
George Chang ◽  
Harold Anderson ◽  
Denise Barrientos

Abstract Coating of the Cu bond wire with Pd has been a rather widely accepted method in semiconductor packaging to improve the wire bonding reliability. Based on comparison of a Cu bond wire and a Pd-coated Cu bond wire on AlCu pads that had passed HAST, new insight into the mechanism of the reliability improvement is gained. Our analysis showed the dominant Cu-rich intermetallics (IMC) were Cu3Al2 for the Cu wire, and (CuPdx)Al for the Pd-coated wire. The results have verified the Cu-rich IMC being suppressed by the Pd-coating, which has been extensively reported in literature. Binary phase diagrams of Al, Cu, and Pd indicate that the addition of Pd elevates the melting point and bond strength of (CuPdx)Al compared with CuAl that formed with the bare Cu wire. The improvements are expected to decrease the kinetics of phase transformation toward the more Cu-rich IMC. With the suppression of the Cu-rich IMC, the corrosion resistance of the wire bonding is enhanced and the wire bonding reliability improved. We find that Ni behaves thermodynamically quite similar to Pd in the ternary system of Cu wire bonding, and therefore possesses the potential to improve the corrosion resistance.


Author(s):  
Alessandro Soldati ◽  
Carlo Concari ◽  
Fabrizio Dossena ◽  
Davide Barater ◽  
Francesco Iannuzzo ◽  
...  

2011 ◽  
Vol 2011 (DPC) ◽  
pp. 001797-001828 ◽  
Author(s):  
Christophe Zinck ◽  
Jean-Marc Yannou ◽  
Jérôme Baron ◽  
Phil Garou

Renewed interest in flip-chip technologies in concurrently motivated in many application areas by such factors as the rising cost of gold used for wire bonding, the need for low thickness devices, continued CMOS downscaling, higher currents and temperatures, and lower voltages. Today, many sophisticated devices can no longer be packaged with wire bonding technology and the mobile applications are more and more requiring footprint and weight reduction coupled with higher electrical performances (signal propagation and power distribution). The emergence of the 28nm CMOS technology node in particular, poses new quality and reliability constraints on interconnect technologies so as to cope with the increasing fragility of the back end of line, which may disqualify wire bonding for good. Not to mention the ever increasing IO density, making it necessary to develop new bumping and substrate technologies. It is not any longer only about higher performance and lower cost reliable interconnect, assembly and packaging technologies: if remained unresolved, the above constraints will prove to be bottlenecks if not obstacles to the continuation of Moore's law. In this presentation, we will first focus on Flip-Chip technologies and their evolution. We will present the main players, their facilities and technologies. We will sketch a worldwide roadmap of flip-chip featuring such varied applications as wireless digital, PC processors, RF and power devices. We will then present our market forecasts and explain how we see these innovations will modify the market of packaging interconnections and assembly in the years to come.


2015 ◽  
Vol 36 (7) ◽  
pp. 696-698 ◽  
Author(s):  
Dan Simon ◽  
Cristian Boianceanu ◽  
Gilbert De Mey ◽  
Vasile Topa

2013 ◽  
Vol 2013 (1) ◽  
pp. 000318-000323
Author(s):  
Baik-Woo Lee ◽  
Chang-Sik Kim ◽  
Changmo Jeong ◽  
Younghun Byun ◽  
Jeong-Won Yoon ◽  
...  

To replace conventional Al heavy wire bonding in interconnecting power devices, we have explored the use of Cu heavy wire bonding, which offers superior electrical, mechanical, and thermal properties compared to Al wires that leads to better interconnection reliability. Chip pad metallizations that are strong enough to support Cu wires firmly against chip pads and endure high bonding parameters were first evaluated by 3D finite element modeling (FEM) of the Cu heavy wire bonding process. The FEM results indicated that an electroless plated Ni layer may be used as the primary candidate for the pad metallization of Cu heavy wire bonding because it enables the reinforcement of standard Al pads in power devices and allows for metallurgical interaction with Cu wires. Further, the deposition of the Ni layer entailed a simple protocol. The three major bonding parameters including force, ultrasonic energy, and time were optimized to achieve successful wire bonding of 300-μm-thick Cu wires to pads strengthened with Ni layers in power devices. Microstructures and compositions of the bonded interface were analyzed by transmission electron microscopy, which provided insight into the bonding characteristics between the Cu wires and the Ni pads. Reliability tests of the bonding were also carried out by the thermal shock test and pressure cooker test.


Sign in / Sign up

Export Citation Format

Share Document