Threshold voltage modeling of Gaussian-doped Dual work function Material Cylindrical Gate-all-around (CGAA) MOSFET considering the effect of temperature and fixed interface trapped charges

2021 ◽  
pp. 105354
Author(s):  
Pritha Banerjee ◽  
Jayoti Das
Keyword(s):  
Work Function ◽  
Threshold Voltage ◽  
Effect Of Temperature ◽  
Fixed Interface

Acetylene chemisorption at palladium: Effect of temperature and structure of the surface

1984 ◽  
Vol 49 (6) ◽  
pp. 1448-1458
Author(s):  
Josef Kopešťanský
Keyword(s):  
Work Function ◽  
Atomic Hydrogen ◽  
Effect Of Temperature ◽  
Thermally Stable ◽  
Template Effect ◽  
Temperature Range ◽  
Adsorbed Layers ◽  
Different Types ◽  
Adsorption Complexes ◽  
Low Coverage

The effect of temperature and structure of the palladium surfaces on acetylene chemisorption was studied along with the interaction of the adsorbed layers with molecular and atomic hydrogen. The work function changes were measured and combined with the volumetric measurements and analysis of the products. At temperature below 100 °C, acetylene is adsorbed almost without dissociation and forms at least two different types of thermally stable adsorption complexes. Acetylene adsorbed at 200 °C is partly decomposed, especially in the low coverage region. Besides the above mentioned effects, the template effect of adsorbed acetylene was studied in the temperature range from -80° to 25 °C. It has been shown that this effect is a typical phenomenon of the palladium-acetylene system which is not due to surface impurities.

Effect of Temperature and Al Concentration on the Electrical Performance of GaN and Al0.2Ga0.8N Accumulation-Mode FET Devices

2010 ◽  
Vol 645-648 ◽  
pp. 1215-1218
Author(s):  
Marko J. Tadjer ◽  
Karl D. Hobart ◽  
Michael A. Mastro ◽  
Travis J. Anderson ◽  
Eugene A. Imhoff ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Field Effect Transistors ◽  
Chemical Vapor ◽  
Drain Current ◽  
Electrical Performance ◽  
Effect Of Temperature ◽  
Organic Chemical ◽  
N Accumulation ◽  
Positive Threshold ◽  
Aln Buffer

Field-effect transistors were fabricated on GaN and Al0.2Ga0.8N epitaxial layers grown by metal organic chemical vapor deposition (MOCVD) on sapphire substrates. The threshold voltage VTH was higher when AlGaN was used as an active layer. VTH also increased with temperature due to the increased positive polarization charge at the GaN/AlN buffer/sapphire interfaces. Drain current increased at high temperatures even with more positive threshold voltage, which makes GaN-based FET devices attractive for high temperature operation.

Threshold Voltage Control in $\hbox{Al}_{0.72} \hbox{Ga}_{0.28}\hbox{N/AlN/GaN}$ HEMTs by Work-Function Engineering

2010 ◽  
Vol 31 (9) ◽  
pp. 954-956 ◽  
Author(s):  
Guowang Li ◽  
Tom Zimmermann ◽  
Yu Cao ◽  
Chuanxin Lian ◽  
Xiu Xing ◽  
...  
Keyword(s):  
Work Function ◽  
Threshold Voltage ◽  
Voltage Control ◽  
Gan Hemts
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