A new model for predicting the effect of temperature and devices dimension on threshold voltage of PMOS in VLSI

2015 ◽  
Author(s):  
A. Ruangphanit ◽  
A. Poyai ◽  
N. Sakuna ◽  
S. Niemcharoen ◽  
R. Muanghlua
Keyword(s):  
Threshold Voltage ◽  
Effect Of Temperature ◽  
New Model

scholarly journals Photoreactivation and Dark Repair in UV-Treated Microorganisms: Effect of Temperature

2007 ◽  
Vol 73 (5) ◽  
pp. 1594-1600 ◽  
Author(s):  
I. Salcedo ◽  
J. A. Andrade ◽  
J. M. Quiroga ◽  
E. Nebot
Keyword(s):  
Kinetic Parameters ◽  
Rate Constant ◽  
Logistic Equation ◽  
Effect Of Temperature ◽  
Exponential Dependence ◽  
Survival Ratio ◽  
Decay Rate Constant ◽  
New Model ◽  
Influence Of Temperature On ◽  
Temperature Variable

ABSTRACT Because of the lack of readily available information about the influence of temperature on microorganism reactivation processes subsequent to inactivation with UV radiation, a series of batch reactivation studies were performed at 5, 10, 15, 20, 25, and 30°C. A special effort was made to model the reactivation process to enable the effect of the temperature variable to be quantified. Because an earlier-proposed kinetic model (K. Kashimada, N. Kamiko, K. Yamamoto, and S. Ohgaki, Water Sci. Technol. 33:261-269, 1996), a first-order saturation type, does not adequately fit the data obtained in experiments of reactivation in conditions of light and darkness, a modification of that model is proposed. The new model, which actually coincides with the classical logistic equation, incorporates two kinetic parameters: the maximum survival ratio (Sm ) and the second-order reactivation rate constant (k 2). In order to interpret correctly the reactivation occurring in conditions of darkness, a new term for the decay is added to the logistic equation. The new model accurately fits the data obtained in reactivation experiments, permitting the interpretation of the kinetic parameters Sm , k 2, and M (for only repair in darkness), where M is mortality, a zero-order decay rate constant, and their relationship with various environmental conditions, such as microbial type, light, and temperature. The parameters Sm and k 2 (and M for reactivation in conditions of darkness) show exponential dependence on the reactivating temperature, and it is possible to predict their values and hence the reactivation curve from the equations proposed in this work.

Effect of Temperature and Al Concentration on the Electrical Performance of GaN and Al0.2Ga0.8N Accumulation-Mode FET Devices

2010 ◽  
Vol 645-648 ◽  
pp. 1215-1218
Author(s):  
Marko J. Tadjer ◽  
Karl D. Hobart ◽  
Michael A. Mastro ◽  
Travis J. Anderson ◽  
Eugene A. Imhoff ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Field Effect Transistors ◽  
Chemical Vapor ◽  
Drain Current ◽  
Electrical Performance ◽  
Effect Of Temperature ◽  
Organic Chemical ◽  
N Accumulation ◽  
Positive Threshold ◽  
Aln Buffer

Field-effect transistors were fabricated on GaN and Al0.2Ga0.8N epitaxial layers grown by metal organic chemical vapor deposition (MOCVD) on sapphire substrates. The threshold voltage VTH was higher when AlGaN was used as an active layer. VTH also increased with temperature due to the increased positive polarization charge at the GaN/AlN buffer/sapphire interfaces. Drain current increased at high temperatures even with more positive threshold voltage, which makes GaN-based FET devices attractive for high temperature operation.

scholarly journals ANALYSIS OF ELECTRICAL BEHAVIOR OF SOI LDMOSFET WITH RESPECT TO TEMPERATURE AND DOPING USING T-CAD SIMULATOR

2015 ◽  
pp. 206-209
Author(s):  
DEEKSHA BAJPAI ◽  
AVNISH KUMAR UPADHYAY
Keyword(s):  
Temperature Coefficient ◽  
Leakage Current ◽  
Breakdown Voltage ◽  
Threshold Voltage ◽  
Positive Temperature Coefficient ◽  
Effect Of Temperature ◽  
Positive Temperature ◽  
Wireless System ◽  
Current Threshold ◽  
Frequency Power

In this paper, the effect of temperature variation and doping variation of p-body on various parameters like Breakdown voltage, on resistance, drain leakage current, threshold voltage etc of SOI laterally diffused MOSFET has been analyzed. Since power mosfet is designed for radio frequency power amplifiers which is used in wireless system-on-a-chip applications. The device is fabricated on a thin-film SOI wafer in order to reduce the leakage current and also prohibit the formation of parasitic diode with substrate. On the basis of analysis we are able to prove that this SOI LDMOSFET has +ve temperature coefficient for breakdown voltage, negative temp coefficient for threshold voltage, positive temperature coefficient for on resistance and +ve temperature coefficient for drain leakage current.

Characterization and Modeling of SiC LTJFET for Analog Integrated Circuit Simulation and Design

2009 ◽  
Vol 615-617 ◽  
pp. 915-918 ◽  
Author(s):  
A. Maralani ◽  
Michael S. Mazzola ◽  
David C. Sheridan ◽  
Igor Sankin ◽  
Volodymyr Bondarenko
Keyword(s):  
Integrated Circuits ◽  
Threshold Voltage ◽  
Integrated Circuit ◽  
Analog Circuit ◽  
Circuit Simulation ◽  
Analog Integrated Circuits ◽  
Effect Of Temperature ◽  
Common Source ◽  
Small Signal ◽  
Signal Parameters

The design of analog integrated circuits, for instance, the operational amplifiers, have been widely perfected with devices and processes available in silicon. However, analogous circuits have been the subject of research in Silicon Carbide (SiC). Among SiC devices, 4H-SiC Lateral-Trench JFET (LTJFET) transistor offers advantages and new opportunities to make affordable and reliable analog integrated circuits for harsh environment. In this paper: (1) SiC LTJFET is characterized for modeling and simulation, (2) effect of temperature variation on SiC LTJFET threshold voltage and small signal parameters are reported, (3) gain performance and small signal parameters of the basic analog circuit block, Common Source (CS) amplifier, based on the variation of the load transistors threshold voltage (Vth) are studied and analyzed, and (4) frequency and transient response of the cascoded CS amplifier (CS-Cas) are reported.

Performance Analysis of Nanoscale Double Gate MOSFETs with High-κ Gate Stack

2011 ◽  
Vol 110-116 ◽  
pp. 1892-1899 ◽  
Author(s):  
Esmat Farzana ◽  
Shuvro Chowdhury ◽  
Rizvi Ahmed ◽  
M. Ziaur Rahman Khan
Keyword(s):  
Threshold Voltage ◽  
Transport Model ◽  
Ballistic Transport ◽  
Drain Current ◽  
Effect Of Temperature ◽  
Double Gate ◽  
Gate Stack ◽  
Improved Performance ◽  
High Dielectric

The performance and characteristics of Double Gate MOSFET with high dielectric constant (high-κ) gate stack have been analyzed and compared with those of conventional pure SiO2gate MOSFET. Quantum Ballistic Transport Model has been used to demonstrate the performance of the device in terms of threshold voltage, drain current in both low and high drain voltage regions and subthreshold swing. The effect of temperature on the threshold voltage and subthreshold characteristics has also been observed. This work reveals that improved performance of this structure can be achieved by scaling the gate length and illustrates its superiority over SiO2gate MOSFETs in achieving long-term ITRS goals.

Circuit Modeling of Vertical Buried-Grid SiC JFETs

2010 ◽  
Vol 645-648 ◽  
pp. 965-968
Author(s):  
Georg Tolstoy ◽  
Dimosthenis Peftitsis ◽  
Jang Kwon Lim ◽  
Mietek Bakowski ◽  
Hans Peter Nee
Keyword(s):  
Threshold Voltage ◽  
Circuit Model ◽  
Circuit Modeling ◽  
Short Channel ◽  
Simulation Data ◽  
New Model ◽  
Source Voltage

The main problem when the conventional PSpice JFET model is used to simulate a vertical short-channel buried-grid JFET is caused by the constant values of Threshold Voltage (VTO) and Transconductance (BETA). This paper presents a new model for the vertical short-channel buried-grid 1200V JFET, where both VTO and BETA vary with respect to the Drain-Source voltage. Simulation data from Medici have been analyzed in order to extract the analytical equations for VTO and BETA. Also other PSpice parameters are extracted from these data. The proposed circuit model has been simulated in Matlab by optimizing the same algorithm that PSpice uses. A variety of results are shown and discussed in this paper.

Effect of Temperature on 16 nm n-FiNFET

2018 ◽  
Vol 775 ◽  
pp. 260-265
Author(s):  
Weera Pengchan
Keyword(s):  
Threshold Voltage ◽  
Power Supply ◽  
Gate Oxide ◽  
Effect Of Temperature ◽  
Metal Contact ◽  
Saturation Current ◽  
Current Threshold ◽  
A Performance

This research presents the effect of temperature that influence to the performance of 16 nm SOI n-FinFET structure. The structure has created with structure tool on GTS Framework. The transistor has 1 nanometer HfO2 gate oxide with all metal contact and biased on Minimos-NT tool, with variation of temperatures from 300 K to 420 K with 30 K per step. The result found the decrease in saturation current, threshold voltage and mobility. The temperature brought electron and rose the density of electron as the potential from power supply that energized to the structure. They made mobility fall with them rising. The temperature makes a performance of FinFET structure.

The Hitachi Model HS-8 Electron Microscope

1967 ◽  
Vol 25 ◽  
pp. 238-239
Author(s):  
H. Akabori ◽  
K. Nishiwaki ◽  
K. Yoneta
Keyword(s):  
Electron Microscope ◽  
New Model ◽  
Predecessor Model

By improving the predecessor Model HS- 7 electron microscope for the purpose of easier operation, we have recently completed new Model HS-8 electron microscope featuring higher performance and ease of operation.

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