Corrigendum to “An analytical approach to calculate effective channel length in graphene nanoribbon field effect transistors” [Microelectron. Reliab. 53 (4) (2013) 540–543]

2014 ◽  
Vol 54 (3) ◽  
pp. 662
Author(s):  
M. Ghadiry ◽  
M. Nadi ◽  
M. Bahadoran ◽  
Asrulnizam ABD Manaf ◽  
H. Karimi ◽  
...  
Keyword(s):  
Field Effect ◽  
Analytical Approach ◽  
Field Effect Transistors ◽  
Channel Length ◽  
Graphene Nanoribbon ◽  
Effective Channel

An analytical approach to calculate effective channel length in graphene nanoribbon field effect transistors

2013 ◽  
Vol 53 (4) ◽  
pp. 540-543 ◽  
Author(s):  
M. Ghadiry ◽  
M. Nadi ◽  
M. Bahadorian ◽  
Asrulnizam ABD Manaf ◽  
H. Karimi ◽  
...  
Keyword(s):  
Field Effect ◽  
Analytical Approach ◽  
Field Effect Transistors ◽  
Channel Length ◽  
Graphene Nanoribbon ◽  
Effective Channel

Important Role of Parasitic Regions in Electrical Characteristics of SiC MESFETs

2005 ◽  
Vol 483-485 ◽  
pp. 861-864
Author(s):  
Ho Young Cha ◽  
Y.C. Choi ◽  
Lester F. Eastman ◽  
Michael G. Spencer ◽  
L. Ardaravičius ◽  
...  
Keyword(s):  
Current Density ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Channel Length ◽  
Depletion Region ◽  
Electrical Characteristics ◽  
Drain Side ◽  
Low Drift ◽  
Effective Channel

Because SiC does not have velocity overshooting behaviour, the current density of SiC metal-semiconductor field-effect transistors (MESFETs) is restricted by low drift velocity in the parasitic region between source and gate where the applied electric field is low. In addition, the extension of the depletion region toward the drain side at high drain voltages increases the effective channel length and, as a result, lowers the cut-off frequency due to the increased transit time.

Sub-threshold-like charge transport in organic field effect transistor: A study on effective channel thickness

2015 ◽  
Vol 29 (28) ◽  
pp. 1550172
Author(s):  
A. K. Kavala ◽  
A. K. Mukherjee
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Thermionic Emission ◽  
Drain Current ◽  
Channel Length ◽  
Hole Injection ◽  
Emission Model ◽  
Short Channel ◽  
Channel Thickness ◽  
Effective Channel

A short channel organic field effect transistors (OFET) based on Pentacene, having channel length in the range of sub-micrometer, has been numerically modelled for low values of drain voltage. The output characteristics show a nonlinear concave increase of drain current for all values of gate voltages. This anomalous current-voltage behavior, which resembles sub-threshold characteristics of silicon FETs, shows a good match with earlier experimental reports on OFET at low drain voltages. The sub-threshold-like characteristics has been interpreted in light of thermionic-emission model because of the presence of hole injection barrier at drain (gold)/Pentacene interface. The associated analysis has facilitated to obtain a significant parameter, effective channel thickness [Formula: see text], for the first time in case of OFETs. It came out to be roughly 4 nm and 8 nm for experimental devices of poly(3-hexylthiophene-2,5-diyl) and Pentacene, respectively, while the numerically modelled device yielded a value of about 60 nm. Increase of [Formula: see text] with transverse gate electric field is also observed. Physical explanation of the observations is also presented.

New device structures for graphene nanoribbon field effect transistors

2016 ◽  
Vol 6 (3) ◽  
pp. 265-270 ◽  
Author(s):  
Mahdiar Ghadiry ◽  
Harith Ahmad ◽  
Chong Wu Yi ◽  
Asrulnizam Abd Manaf
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Graphene Nanoribbon ◽  
New Device ◽  
Device Structures

scholarly journals Impact of the channel length on molybdenum disulfide field effect transistors with hafnia-based high-k dielectric gate

AIP Advances ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 065229
Author(s):  
Yanxiao Sun ◽  
Gang Niu ◽  
Wei Ren ◽  
Jinyan Zhao ◽  
Yankun Wang ◽  
...  
Keyword(s):  
Molybdenum Disulfide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Channel Length ◽  
High K ◽  
High K Dielectric
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