AbstractExperimental investigations on the effects of load sequence on degradations of bond-wire contacts of Insulated Gate Bipolar Transistors power modules are reported in this paper. Both the junction temperature swing ($$\Delta T_{j}$$
Δ
T
j
) and the heating duration ($$t_{ON}$$
t
ON
) are investigated. First, power cycling tests with single conditions (in $$\Delta T_{j}$$
Δ
T
j
and $$t_{ON}$$
t
ON
), are performed in order to serve as test references. Then, combined power cycling tests with two-level stress conditions have been done sequentially. These tests are carried-out in the two sequences: low stress/high stress (LH) and high stress/low stress (HL) for both $$\Delta T_{j}$$
Δ
T
j
and $$t_{ON}$$
t
ON
. The tests conducted show that a sequencing in $$\Delta T_{j}$$
Δ
T
j
regardless of the direction “high-low” or “low–high” leads to an acceleration of degradations and so, to shorter lifetimes. This is more pronounced when the difference between the stress levels is large. With regard to the heating duration ($$t_{ON}$$
t
ON
), the effect seems insignificant. However, it is necessary to confirm the effect of this last parameter by additional tests.
Using of bond-wire resistance as aging indicator of semiconductor power modules
