Thin layer oxide in the drift region of Laterally double-diffused metal oxide semiconductor on silicon-on-insulator: A novel device structure enabling reliable high-temperature power transistors

Silicon On Insulator ◽

Oxide Semiconductor ◽

Drift Region ◽

Device Structure ◽

Power Transistors ◽

Novel Device

Performance Improvement of Partially Silicon-on-Insulator Lateral Double-Diffused Metal–Oxide–Semiconductor Field-Effect Transistors Using Doping-Engineered Drift Region

Japanese Journal of Applied Physics ◽

10.1143/jjap.51.101201 ◽

2012 ◽

Vol 51 ◽

pp. 101201

Author(s):

Saeed Mohammadi ◽

Ali Afzali-Kusha ◽

Saeed Mohammadi

Keyword(s):

Metal Oxide ◽

Performance Improvement ◽

Field Effect ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Drift Region

Ultra-Low Power High Temperature and Radiation Hard Complementary Metal-Oxide-Semiconductor (CMOS) Silicon-on-Insulator (SOI) Voltage Reference

Sensors ◽

10.3390/s131217265 ◽

2013 ◽

Vol 13 (12) ◽

pp. 17265-17280 ◽

Cited By ~ 7

Author(s):

El Boufouss ◽

Laurent Francis ◽

Valeriya Kilchytska ◽

Pierre Gérard ◽

Pascal Simon ◽

...

Keyword(s):

High Temperature ◽

Metal Oxide ◽

Low Power ◽

Complementary Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Voltage Reference ◽

Ultra Low Power ◽

Radiation Hard

Analysis of the breakdown mechanism for an ultra high voltage high-side thin layer silicon-on-insulator p-channel lateral double-diffused metal-oxide semiconductor

Chinese Physics B ◽

10.1088/1674-1056/21/3/037305 ◽

2012 ◽

Vol 21 (3) ◽

pp. 037305

Author(s):

Xiang Zhuang ◽

Ming Qiao ◽

Bo Zhang ◽

Zhao-Ji Li

Keyword(s):

Metal Oxide ◽

Thin Layer ◽

High Voltage ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Breakdown Mechanism ◽

High Side ◽

Ultra High Voltage

Hot-carrier-induced linear drain current and threshold voltage degradation for thin layer silicon-on-insulator field P-channel lateral double-diffused metal-oxide-semiconductor

Applied Physics Letters ◽

10.1063/1.4936161 ◽

2015 ◽

Vol 107 (20) ◽

pp. 203507 ◽

Cited By ~ 7

Author(s):

Xin Zhou ◽

Ming Qiao ◽

Yitao He ◽

Zhaoji Li ◽

Bo Zhang

Keyword(s):

Metal Oxide ◽

Thin Layer ◽

Threshold Voltage ◽

Drain Current ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Hot Carrier ◽

Voltage Degradation ◽

Threshold Voltage Degradation

Performance Improvement of Partially Silicon-on-Insulator Lateral Double-Diffused Metal–Oxide–Semiconductor Field-Effect Transistors Using Doping-Engineered Drift Region

Japanese Journal of Applied Physics ◽

10.7567/jjap.51.101201 ◽

2012 ◽

Vol 51 (10R) ◽

pp. 101201

Author(s):

Saeed Mohammadi ◽

Ali Afzali-Kusha ◽

Saeed Mohammadi

Keyword(s):

Metal Oxide ◽

Performance Improvement ◽

Field Effect ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Drift Region

Erratum: “Hot-carrier-induced linear drain current and threshold voltage degradation for thin layer silicon-on-insulator field P-channel lateral double-diffused metal-oxide-semiconductor” [Appl. Phys. Lett. 107, 203507 (2015)]

Applied Physics Letters ◽

10.1063/1.4943206 ◽

2016 ◽

Vol 108 (9) ◽

pp. 099901

Author(s):

Xin Zhou ◽

Ming Qiao ◽

Yitao He ◽

Zhaoji Li ◽

Bo Zhang

Keyword(s):

Metal Oxide ◽

Thin Layer ◽

Threshold Voltage ◽

Drain Current ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Hot Carrier ◽

Voltage Degradation ◽

Threshold Voltage Degradation

Silicon-on-insulator technology for high temperature metal oxide semiconductor devices and circuits

Materials Science and Engineering B ◽

10.1016/0921-5107(94)04018-y ◽

1995 ◽

Vol 29 (1-3) ◽

pp. 7-12 ◽

Cited By ~ 27

Author(s):

Denis Flandre

Keyword(s):

High Temperature ◽

Metal Oxide ◽

Semiconductor Devices ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Silicon On Insulator Technology

Investigation of piezoresistive effect in p-channel metal–oxide–semiconductor field-effect transistors fabricated on circular silicon-on-insulator diaphragms using cost-effective minimal-fab process

Japanese Journal of Applied Physics ◽

10.7567/jjap.57.06hd03 ◽

2018 ◽

Vol 57 (6S1) ◽

pp. 06HD03 ◽

Cited By ~ 3

Author(s):

Yongxun Liu ◽

Hiroyuki Tanaka ◽

Norio Umeyama ◽

Kazuhiro Koga ◽

Sommawan Khumpuang ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Cost Effective ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Piezoresistive Effect

Fabricating high performance n-channel lateral double diffused metal–oxide–semiconductor transistors utilizing the shallow trench isolation as a salicide blocking mask of the drift region

Current Applied Physics ◽

10.1016/j.cap.2007.10.086 ◽

2009 ◽

Vol 9 (1) ◽

pp. 9-12 ◽

Cited By ~ 3

Author(s):

Kee-Yeol Na ◽

Yeong-Seuk Kim

Keyword(s):

Metal Oxide ◽

High Performance ◽

Oxide Semiconductor ◽

Drift Region ◽

Shallow Trench Isolation ◽

Trench Isolation

Self-consistent calculations of inversion-layer mobility in highly doped silicon-on-insulator metal–oxide–semiconductor field-effect transistors

Journal of Applied Physics ◽

10.1063/1.1378329 ◽

2001 ◽

Vol 90 (2) ◽

pp. 866-870 ◽

Cited By ~ 6

Author(s):

Hideyuki Iwata

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Inversion Layer ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Self Consistent ◽

Doped Silicon