Thickness effect on the bipolar switching mechanism for nonvolatile resistive memory devices based on CeO2 thin films

2015 ◽  
Vol 39 ◽  
pp. 211-216 ◽  
Author(s):  
Anwar Manzoor Rana ◽  
M. Ismail ◽  
E. Ahmed ◽  
I. Talib ◽  
Tahira Khan ◽  
...  
Keyword(s):  
Thin Films ◽  
Thickness Effect ◽  
Memory Devices ◽  
Resistive Memory ◽  
Switching Mechanism ◽  
Bipolar Switching

Uniform and electroforming-free resistive memory devices based on solution-processed triple-layered NiO/Al2O3 thin films

2019 ◽  
Vol 125 (9) ◽  
Author(s):  
Xiao Lin Wang ◽  
Chao Wen ◽  
Yuan Liu ◽  
T. P. Chen ◽  
Hai Yan Zhang ◽  
...  
Keyword(s):  
Thin Films ◽  
Memory Devices ◽  
Resistive Memory ◽  
Solution Processed

Effect of Various Electrode Materials in Non-Volatile Memory Device Using Poly(3,4-Ethylenedioxythiophene):Poly(Styrenesulfonate) (PEDOT:PSS) Thin Films

2008 ◽  
Vol 54 ◽  
pp. 470-473 ◽  
Author(s):  
Hun Jun Ha ◽  
J.M. Lee ◽  
M. Kim ◽  
O.H. Kim
Keyword(s):  
Thin Films ◽  
Work Function ◽  
Electrode Materials ◽  
Memory Device ◽  
Current Level ◽  
Switching Behavior ◽  
Memory Devices ◽  
Carrier Injection ◽  
Bipolar Switching ◽  
Non Volatile Memory

We have studied the effect of various electrodes on non-volatile polymer memory devices. The ITO/PEDOT:PSS/Top electrode (TE) devices had bipolar switching behavior. The OFF current level of devices increased from 3×10-4 A to 3×10-3 A and the ON voltage decreased from 0.8 V to 0.5 V as the TE work function increased. The yield of devices decreased from over 50 % to under 10 % as the TE work function of devices increased. This result occurred because carrier injection was affected by the TE work function.

Fabrication and Characterization of Copper Oxide Resistive Memory Devices

2011 ◽  
Vol 1337 ◽  
Author(s):  
S.M. Bishop ◽  
B.D. Briggs ◽  
Z.P. Rice ◽  
S. Addepalli ◽  
N.R. McDonald ◽  
...  
Keyword(s):  
Copper Oxide ◽  
Electrical Contact ◽  
Switching Behavior ◽  
Memory Devices ◽  
Plasma Oxidation ◽  
Resistive Memory ◽  
Oxide Interface ◽  
Bipolar Switching ◽  
Current Voltage

ABSTRACTThree synthesis techniques have been explored as routes to produce copper oxide for use in resistive memory devices (RMDs). The major results and their impact on device current-voltage characteristics are summarized. The majority of the devices fabricated from thermally oxidized copper exhibited a diode-like behavior independent of the top electrode. When these devices were etched to form mesa structures, bipolar switching was observed with set voltages <2.5 V, reset voltages <(-1) V and ROFF/RON ∼103-104. Bipolar switching behavior was also observed for devices fabricated from copper oxide synthesized by RT plasma oxidation (ROFF/RON up to 108). Voiding at the copper-copper oxide interface occurred in films produced by thermal and plasma oxidation performed at ≥200°C. The copper oxide synthesized by reactive sputtering had large areas of open volume in the microstructure; this resulted in short circuited devices because of electrical contact between the bottom and top electrodes. The results for fabricating copper oxide into ≤100 nm features are also discussed.

scholarly journals Memory Devices: Solution‐Processed Stretchable Ag 2 S Semiconductor Thin Films for Wearable Self‐Powered Nonvolatile Memory (Adv. Mater. 23/2021)

2021 ◽  
Vol 33 (23) ◽  
pp. 2170181
Author(s):  
Seungki Jo ◽  
Soyoung Cho ◽  
U Jeong Yang ◽  
Gyeong‐Seok Hwang ◽  
Seongheon Baek ◽  
...  
Keyword(s):  
Thin Films ◽  
Nonvolatile Memory ◽  
Memory Devices ◽  
Solution Processed ◽  
Semiconductor Thin Films ◽  
Self Powered

Thickness effect on the crystallization characteristic of RF sputtered Sb thin films

2021 ◽  
Author(s):  
Yufeng Huang ◽  
Weihua Wu ◽  
Shengqing Xu ◽  
Xiaoqin Zhu ◽  
Sannian Song ◽  
...  
Keyword(s):  
Thin Films ◽  
Thickness Effect ◽  
Crystallization Characteristic

Flicker Noise Behavior in Resistive Memory Devices With Double-Layered Transition Metal Oxide

2013 ◽  
Vol 34 (2) ◽  
pp. 244-246 ◽  
Author(s):  
Jung-Kyu Lee ◽  
Sunghun Jung ◽  
Byeong-In Choe ◽  
Jinwon Park ◽  
Sung-Woong Chung ◽  
...  
Keyword(s):  
Transition Metal ◽  
Metal Oxide ◽  
Flicker Noise ◽  
Transition Metal Oxide ◽  
Memory Devices ◽  
Resistive Memory ◽  
Layered Transition Metal

Integrating Multiple Resistive Memory Devices on a Single Carbon Nanotube

2013 ◽  
Vol 23 (45) ◽  
pp. 5631-5637 ◽  
Author(s):  
David Brunel ◽  
Costin Anghel ◽  
Do-Yoon Kim ◽  
Saïd Tahir ◽  
Stéphane Lenfant ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Memory Devices ◽  
Resistive Memory

Resistive switching characteristics of all-solution-based Ag/TiO2/Mo-doped In2O3devices for non-volatile memory applications

2016 ◽  
Vol 4 (46) ◽  
pp. 10967-10972 ◽  
Author(s):  
Sujaya Kumar Vishwanath ◽  
Jihoon Kim
Keyword(s):  
Resistive Switching ◽  
Retention Time ◽  
Elevated Temperatures ◽  
Switching Behavior ◽  
Memory Devices ◽  
Bipolar Switching ◽  
Non Volatile Memory ◽  
Volatile Memory ◽  
Switching Characteristics ◽  
Memory Applications

The all-solution-based memory devices demonstrated excellent bipolar switching behavior with a high resistive switching ratio of 103, excellent endurance of more than 1000 cycles, stable retention time greater than 104s at elevated temperatures, and fast programming speed of 250 ns.

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