Molecular dynamics study on femtosecond laser aided machining of monocrystalline silicon carbide

2019 ◽  
Vol 101 ◽  
pp. 1-9 ◽  
Author(s):  
Binbin Meng ◽  
Dandan Yuan ◽  
Jian Zheng ◽  
Shaolin Xu
Keyword(s):  
Molecular Dynamics ◽  
Silicon Carbide ◽  
Femtosecond Laser ◽  
Monocrystalline Silicon

High-speed processing of silicon carbide ceramic by high repetition frequency femtosecond laser

2021 ◽  
Author(s):  
Jian Zhang ◽  
Feng Geng ◽  
Zhichao Liu ◽  
Qinghua Zhang ◽  
Qiao Xu ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Femtosecond Laser ◽  
High Speed ◽  
Repetition Frequency ◽  
Silicon Carbide Ceramic ◽  
High Repetition

Electronic Properties of Femtosecond Laser Induced Modified Spots on Single Crystal Silicon Carbide

2010 ◽  
Vol 645-648 ◽  
pp. 239-242 ◽  
Author(s):  
Takuro Tomita ◽  
M. Iwami ◽  
M. Yamamoto ◽  
M. Deki ◽  
Shigeki Matsuo ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Femtosecond Laser ◽  
Single Crystal ◽  
Specific Resistance ◽  
Single Crystal Silicon ◽  
Metal Contacts ◽  
Crystal Silicon ◽  
Current Voltage ◽  
Fs Laser ◽  
Current Voltage Characteristics

Femtosecond (fs) laser modification on single crystal silicon carbide (SiC) was studied from the viewpoints of electric conductivity. Fourier transform infrared (FTIR) spectroscopy was carried out on femtosecond laser modified area. The intensity decrease of reststrahlen band due to the modification was observed, and this decrease was explained by the degradation of crystallinity due to the laser irradiation. Polarization dependence of reststrahlen band was also observed on laser modified samples. Current-voltage characteristics and Hall measurements on fs-laser modified region were carried out by fabricating the metal contacts on the ion implanted areas. The specific resistance up to 5.9×10-2 m was obtained for fs-laser modified area.

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