Investigation of Schottky barrier height using area as parameter: Effect of hydrogen peroxide treatment on electrical optical properties of Schottky diode

2021 ◽  
Vol 119 ◽  
pp. 111341
Author(s):  
Aniruddh Bahadur Yadav ◽  
Basavaraj S. Sannakashappanavar
Keyword(s):  
Hydrogen Peroxide ◽  
Optical Properties ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Diode ◽  
Schottky Barrier Height ◽  
Hydrogen Peroxide Treatment

scholarly journals Schottky Barrier Height Engineering of Ti/n-Type Silicon Diode by Means of Ion Implantation

2018 ◽  
Vol 15 (11) ◽  
pp. 803-809
Author(s):  
Doldet TANTRAVIWAT ◽  
Wittawat YAMWONG ◽  
Udom TECHAKIJKAJORN ◽  
Kazuo IMAI ◽  
Burapat INCEESUNGVORN
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Diode ◽  
Schottky Barrier Height ◽  
Schottky Diodes ◽  
Implantation Technique ◽  
Metal Line ◽  
Type Silicon ◽  
Boron Implantation ◽  
Line Process

Herein, boron implantation technique was employed to engineer the Schottky barrier height (SBH) of Ti/n-type silicon junction (Ti/n-Si). The Ti/n-Si Schottky diodes with boron doses of 4, 5.4 and 6.6´1012 cm-2 at the energy of 25 keV were fabricated with improved rectification and their effective SBHs increased from 0.49 to 0.95. The tuning of the effective SBH is mainly attributed to the presence of shallow p-layer, which modifies the energy band at Ti/n-Si interface. This work clearly shows that the ability to precisely control the SBH, regardless of the metal work function, would facilitate the implementation of Schottky diode into various semiconductor structures, such as MPS (Merged PiN Schottky) diode, in order to improve performance without major modification on the existing metal line process.

Effect of Indentation on I-V Characteristics of Au/n-GaAs Schottky Barrier Diodes

2008 ◽  
Vol 63 (3-4) ◽  
pp. 199-202 ◽  
Author(s):  
Ahmet Faruk Ozdemir ◽  
Adnan Calik ◽  
Guven Cankaya ◽  
Osman Sahin ◽  
Nazim Ucar
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Diode ◽  
Ideality Factor ◽  
Room Temperature ◽  
Schottky Barrier Height ◽  
Vickers Microhardness ◽  
Schottky Barrier Diodes ◽  
Microhardness Test ◽  
Current Voltage

Au/n-GaAs Schottky barrier diodes (SBDs) have been fabricated. The effect of indentation on Schottky diode parameters such as Schottky barrier height (φb) and ideality factor (n) was studied by current-voltage (I-V) measurements. The method used for indentation was the Vickers microhardness test at room temperature. The experimental results showed that the I-V characteristics move to lower currents due to an increase of φb with increasing indentation weight, while contacts showed a nonideal diode behaviour.

Metal induced inhomogeneous Schottky barrier height in AlGaN/GaN Schottky diode

2013 ◽  
Vol 102 (24) ◽  
pp. 243505 ◽  
Author(s):  
Jong-Hoon Shin ◽  
Jinhong Park ◽  
SeungYup Jang ◽  
T. Jang ◽  
Kyu Sang Kim
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Diode ◽  
Schottky Barrier Height

A highly oriented conductive MOF thin film-based Schottky diode for self-powered light and gas detection

2020 ◽  
Vol 8 (18) ◽  
pp. 9085-9090 ◽  
Author(s):  
Lin-An Cao ◽  
Ming-Shui Yao ◽  
Hui-Jie Jiang ◽  
Susumu Kitagawa ◽  
Xiao-Liang Ye ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Diode ◽  
Schottky Barrier Height ◽  
Gas Detection ◽  
High Quality ◽  
Self Powered

High-quality EC-MOF thin films are used to modulate the Schottky barrier height and detect light/gas by self-powered mode.

scholarly journals Extraction of the electrical parameters of the Au/InSb/InP Schottky diode in the temperature range (300 K- 425 K)

2020 ◽  
Vol 5 (1) ◽  
pp. 30
Author(s):  
Ali Sadoun
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Diode ◽  
Ideality Factor ◽  
Schottky Barrier Height ◽  
Theoretical Study ◽  
Series Resistance ◽  
Electrical Parameters ◽  
Temperature Range ◽  
Current Voltage

In this work, we have presented a theoretical study of  Au/InSb/InP Schottky diode based on current-voltage (I-V) measurement in the temperature range ( 300 K- 425 K). Electrical parameters of Au/InSb/InP such as barrier height (Φb), ideality factor and series resistance have been calculated by employing the conventional (I-V), Norde, Cheung and Chattopadhyay methods. Measurements show that the Schottky barrier height (SBH), ideality factor and series resistance, RS for Au/InSb/InP Schottky diode in the temperature range (300 K–425 K)  are 0.602-0.69eV, 1.683-1.234 and 84.54-18.95 (Ω), respectively. These parameters were extracted using Atlas-Silvaco-Tcad logical.

scholarly journals A Study about Schottky Barrier Height and Ideality Factor in Thin Film Transistors with Metal/Zinc Oxide Nanoparticles Structures Aiming Flexible Electronics Application

Nanomaterials ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 1188
Author(s):  
Ivan Rodrigo Kaufmann ◽  
Onur Zerey ◽  
Thorsten Meyers ◽  
Julia Reker ◽  
Fábio Vidor ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Flexible Electronics ◽  
Thin Film Transistors ◽  
Zinc Oxide Nanoparticles ◽  
Schottky Barrier Height ◽  
Oxide Nanoparticles ◽  
Semiconductor Interfaces

Zinc oxide nanoparticles (ZnO NP) used for the channel region in inverted coplanar setup in Thin Film Transistors (TFT) were the focus of this study. The regions between the source electrode and the ZnO NP and the drain electrode were under investigation as they produce a Schottky barrier in metal-semiconductor interfaces. A more general Thermionic emission theory must be evaluated: one that considers both metal/semiconductor interfaces (MSM structures). Aluminum, gold, and nickel were used as metallization layers for source and drain electrodes. An organic-inorganic nanocomposite was used as a gate dielectric. The TFTs transfer and output characteristics curves were extracted, and a numerical computational program was used for fitting the data; hence information about Schottky Barrier Height (SBH) and ideality factors for each TFT could be estimated. The nickel metallization appears with the lowest SBH among the metals investigated. For this metal and for higher drain-to-source voltages, the SBH tended to converge to some value around 0.3 eV. The developed fitting method showed good fitting accuracy even when the metallization produced different SBH in each metal-semiconductor interface, as was the case for gold metallization. The Schottky effect is also present and was studied when the drain-to-source voltages and/or the gate voltage were increased.

Schottky barrier height on thermally oxidized InAlN surface evaluated by electrical and optical measurements

2011 ◽  
Vol 98 (16) ◽  
pp. 162111 ◽  
Author(s):  
J. Kováč ◽  
R. Šramatý ◽  
A. Chvála ◽  
H. Sibboni ◽  
E. Morvan ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
Optical Measurements
Sign in / Sign up

Export Citation Format

Share Document