Hydrated bovine serum albumin as the gate dielectric material for organic field-effect transistors

2013 ◽  
Vol 14 (10) ◽  
pp. 2645-2651 ◽  
Author(s):  
Chun-Yi Lee ◽  
Jenn-Chang Hwang ◽  
Yu-Lun Chueh ◽  
Ting-Hao Chang ◽  
Yi-Yun Cheng ◽  
...  
Keyword(s):  
Bovine Serum Albumin ◽  
Serum Albumin ◽  
Bovine Serum ◽  
Field Effect ◽  
Gate Dielectric ◽  
Dielectric Material ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Gate Dielectric Material

Investigation of polysilsesquioxane as a gate dielectric material for organic field-effect transistors

2012 ◽  
Vol 101 (5) ◽  
pp. 053311 ◽  
Author(s):  
M. Kawamura ◽  
Yoshio Nakahara ◽  
Mitsuhiro Ohse ◽  
Maki Kumei ◽  
K. Uno ◽  
...  
Keyword(s):  
Field Effect ◽  
Gate Dielectric ◽  
Dielectric Material ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Gate Dielectric Material

scholarly journals Simulations of the CNFETs using different high-k gate dielectrics

2020 ◽  
Vol 9 (3) ◽  
pp. 943-949
Author(s):  
Ankita Dixit ◽  
Navneet Gupta
Keyword(s):  
Carbon Nanotube ◽  
Field Effect ◽  
Gate Dielectric ◽  
Dielectric Material ◽  
Gate Dielectrics ◽  
Field Effect Transistors ◽  
Drain Current ◽  
Dielectric Materials ◽  
High K ◽  
Gate Dielectric Material

In this paper we presented the analysis of Carbon Nanotube Field Effect Transistors (CNFETs) using various high-k gate dielectric materials. The objective of this work was to choose the best possible material for gate dielectric. This paper also presented the study on the effect of thickness of gate dielectric on the performance of the device. For the analysis (19, 0) CNT was considered because the diameter of (19, 0) CNT is 1.49nm and the CNFETs have been fabricated with the CNT diameter of ~1.5nm. It has been observed that La2O3 is the best gate dielectric material followed by HfO2 and ZrO2. It was also observed that as thickness of gate dielectric material reduces, drain current of CNFET increases. The outcomes of this study matches with the analytical results and hence confirm the results

A dual cross-linked aromatic polythiourea gate dielectric with multifunctional capabilities for organic field-effect transistors

2021 ◽  
Vol 9 (1) ◽  
pp. 77-81
Author(s):  
Sungmi Yoo ◽  
Hyunjin Park ◽  
Yong Seok Kim ◽  
Jong Chan Won ◽  
Dong-Gyun Kim ◽  
...  
Keyword(s):  
Field Effect ◽  
Gate Dielectric ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Cross Links

A multifunctional gate dielectric for organic field-effect transistors is presented by tailoring dual covalent and noncovalent cross-links in aromatic polythiourea networks.

Low-Voltage Organic Field-Effect Transistors (OFETs) with Solution-Processed Metal-Oxide as Gate Dielectric

2011 ◽  
Vol 3 (12) ◽  
pp. 4662-4667 ◽  
Author(s):  
Yaorong Su ◽  
Chengliang Wang ◽  
Weiguang Xie ◽  
Fangyan Xie ◽  
Jian Chen ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Gate Dielectric ◽  
Low Voltage ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Solution Processed
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