Transparent photodetectors with ultra-low dark current and high photoresponse for near-infrared detection

2021 ◽  
Vol 99 ◽  
pp. 106356
Author(s):  
Marvin Yonathan Hadiyanto ◽  
Richie Estrada ◽  
Chih-Chien Lee ◽  
Sajal Biring ◽  
Abdul Khalik Akbar ◽  
...  
Keyword(s):  
Dark Current ◽  
Near Infrared ◽  
Infrared Detection

scholarly journals High-performance near-infrared photodetectors based on gate-controlled graphene–germanium Schottky junction with split active junction

Nanophotonics ◽  
2022 ◽  
Vol 0 (0) ◽  
Author(s):  
Cihyun Kim ◽  
Tae Jin Yoo ◽  
Min Gyu Kwon ◽  
Kyoung Eun Chang ◽  
Hyeon Jun Hwang ◽  
...  
Keyword(s):  
Dark Current ◽  
Interfacial Layer ◽  
High Performance ◽  
Near Infrared ◽  
Infrared Detection ◽  
Schottky Junction ◽  
Internal Electric Field ◽  
Detection Capability ◽  
Junction Device ◽  
Highly Sensitive

Abstract The structure of a gate-controlled graphene/germanium hybrid photodetector was optimized by splitting the active region to achieve highly sensitive infrared detection capability. The strengthened internal electric field in the split active junctions enabled efficient collection of photocarriers, resulting in a responsivity of 2.02 A W−1 and a specific detectivity of 5.28 × 1010 Jones with reduced dark current and improved external quantum efficiency; these results are more than doubled compared with the responsivity of 0.85 A W−1 and detectivity of 1.69 × 1010 Jones for a single active junction device. The responsivity of the optimized structure is 1.7, 2.7, and 39 times higher than that of previously reported graphene/Ge with Al2O3 interfacial layer, gate-controlled graphene/Ge, and simple graphene/Ge heterostructure photodetectors, respectively.

scholarly journals Enhanced red and near infrared detection in flow cytometry using avalanche photodiodes

2008 ◽  
Vol 73A (8) ◽  
pp. 767-776 ◽  
Author(s):  
William G. Lawrence ◽  
Gyula Varadi ◽  
Gerald Entine ◽  
Edward Podniesinski ◽  
Paul K. Wallace
Keyword(s):  
Flow Cytometry ◽  
Near Infrared ◽  
Avalanche Photodiodes ◽  
Infrared Detection

Air-stable few-layer black phosphorus phototransistor for near-infrared detection

2017 ◽  
Vol 28 (8) ◽  
pp. 085201 ◽  
Author(s):  
Junhong Na ◽  
Kichul Park ◽  
Jin Tae Kim ◽  
Won Kook Choi ◽  
Yong-Won Song
Keyword(s):  
Near Infrared ◽  
Black Phosphorus ◽  
Infrared Detection

scholarly journals Ultralong free-standing single crystal perovskite microwires with extremely low dark current

2021 ◽  
Author(s):  
Xiangshun Geng ◽  
Qi-Xin Feng ◽  
He Tian ◽  
Weijian Chen ◽  
Xiaoming Wen ◽  
...  
Keyword(s):  
Single Crystal ◽  
Dark Current ◽  
Near Infrared ◽  
Carrier Lifetime ◽  
Low Loss ◽  
Free Standing ◽  
Monoclinic Crystal ◽  
Monoclinic Crystal Structure ◽  
Integrated Optical ◽  
Integrated Optical Waveguide

Abstract Super long perovskite microwires (PMWs) are in a great demand in many fields such as low-loss microcables and integrated optical waveguide. Despite decades of research into PMWs, single crystal PMWs with several centimeters long have not been obtained. Here, ultralong (up to 7.6 centimeters) monoclinic crystal structure CH3NH3PbI3·DMF PMWs have been synthesized. The high-quality microwire exhibits long carrier lifetime of 1775.7 ns. The as-prepared free-standing PMWs can be integrated to any arbitrary substrate and 808 nm near-infrared photodetectors have been successfully demonstrated. The fabricated device shows a high light on/off ratio of 1.79×106 and an extremely low dark current of 2.5 fA at 1 V bias. This work provides a strategy for the solution growth of ultralong microwires.

scholarly journals Temperature Dependence of Quantum Dots-In-Well Infrared Photo Detectors (QDIPs) using Photoluminescence

2019 ◽  
Vol 8 (2S2) ◽  
pp. 254-259
Keyword(s):  
Quantum Dots ◽  
Fourier Transform ◽  
Infrared Spectroscopy ◽  
Dark Current ◽  
Infrared Detectors ◽  
Normal Incidence ◽  
Infrared Detection ◽  
Intersubband Transitions ◽  
Inas Quantum Dots ◽  
Photo Detectors

A research of quantity dots-in-well infrared photo detectors (QDIPs) produces helpful outcomes for creating a twocolor QDIP. Quantum dot infrared photo detectors (QDIPs) have been shown to be a main technology in mid-and longwavelength infrared detection owing to their capacity for normal incidence operation and low dark current. This research explores infrared detectors based on intersubband transitions in a novel heterostructure of InAs / In0.15 Ga0.85 As / GaAs quantum dotsin-well (DWELL). The InAs quantum dots are also positioned in an In0.15 Ga0.85 in the DWELL framework, which in turn is well positioned with the In0.1Ga0.9As obstacle in GaAs quantum. Using fourier transform infrared spectroscopy, the optical characteristics of the sample were researched using photoluminescence and photocurrent. Spectrally adjustable reaction was noted at 6.2μm and 7.5μm with prejudice and lengthy wave IR reaction

scholarly journals Humanized Anti–Tumor-Associated Glycoprotein–72 for Submillimeter Near-Infrared Detection of Colon Cancer in Metastatic Mouse Models

2020 ◽  
Vol 252 ◽  
pp. 16-21 ◽  
Author(s):  
Hannah M. Hollandsworth ◽  
Siamak Amirfakhri ◽  
Filemoni Filemoni ◽  
Robert M. Hoffman ◽  
Justin Molnar ◽  
...  
Keyword(s):  
Colon Cancer ◽  
Mouse Models ◽  
Near Infrared ◽  
Infrared Detection

High-performance WO3−x-WSe2/SiO2/n-Si heterojunction near-infrared photodetector via a homo-doping strategy

2018 ◽  
Vol 6 (21) ◽  
pp. 5821-5829 ◽  
Author(s):  
Tianchao Guo ◽  
Cuicui Ling ◽  
Teng Zhang ◽  
Hui Li ◽  
Xiaofang Li ◽  
...  
Keyword(s):  
Barrier Height ◽  
Dark Current ◽  
High Performance ◽  
Near Infrared ◽  
Infrared Photodetector ◽  
Interface Barrier

The enhanced performance of WO3−x-WSe2/SiO2/n-Si can be mainly attributed to the down-shift of the EF of WO3−x-WSe2, which results in a larger interface barrier height and a greatly reduced dark current.

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