Design and analysis of GaAs/AlAs asymmetric spacer layer tunnel diodes for high-frequency detection

Author(s):  
A. Salhi ◽  
A. Hadfield ◽  
S.G. Muttlak ◽  
J. Sexton ◽  
M.J. Kelly ◽  
...  
2018 ◽  
Vol 8 (12) ◽  
pp. 2423 ◽  
Author(s):  
Xiaolin Zhang ◽  
Hongjie Mao ◽  
Wenyan Tang

To detect underwater sound-generating targets, a water surface acoustic wave laser interference and signal demodulation technique is proposed in this paper. The underlying principle of this technique involves casting a laser beam onto the water surface disturbed by an underwater acoustic source and creating interference between lights reflected by the surface and reference lights. A data acquisition and processing system was employed to obtain water surface acoustic wave information from the interference signals by means of demodulation, thus allowing detection of the underwater target. For the purpose of this study, an interference detection platform was set up in an optical dark chamber. High-frequency water surface fluctuations were introduced in the reference optical path as the phase generated carriers to create laser interference signals in two different paths, which received demodulation based on an improved arc tangent demodulation algorithm and characteristic ratio algorithm, respectively, in view of their different frequencies. Water surface wave information was then derived from such low-frequency and high-frequency signals. According to test results, in the frequency range of 200 Hz–10 kHz, the frequency detection accuracy was better than 1 Hz. The amplitude measurements exhibited high repeatability, with a standard deviation lower than 2.5 nm. The theory proposed in this paper is therefore experimentally verified with good results.


2020 ◽  
Vol 20 (16) ◽  
pp. 9417-9426
Author(s):  
Ahmad Darwish ◽  
Shady S. Refaat ◽  
Haitham Abu-Rub ◽  
Hamid A. Toliyat

2009 ◽  
Vol 96 (3) ◽  
pp. 97-105 ◽  
Author(s):  
Oleg A. Shchelochkov ◽  
Fang-Yuan Li ◽  
Michael T. Geraghty ◽  
Renata C. Gallagher ◽  
Johan L. Van Hove ◽  
...  

2020 ◽  
Vol 10 (5) ◽  
pp. 1698
Author(s):  
Zhen Cui ◽  
Seungyong Park ◽  
Hosung Choo ◽  
Kyung-Young Jung

This paper presents a ultra-high frequency (UHF) antenna for partial discharge (PD) detection and the antenna sensor can be used near a conducting ground wire. The proposed UHF antenna has advantages of easy setup and higher-frequency detection over the high-frequency current transformer (HFCT) sensor. First, a variety of loop-shaped antennas are designed to compare each near field coupling capability. Then, a new UHF antenna is designed based on the loop-shaped antenna, which has the best near field coupling capability. Finally, the proposed UHF antenna is fabricated and measured. It provides a wide impedance bandwidth of 760 MHz (740–1500 MHz). Its simple setup configuration and wide bandwidth frequency response in the UHF band can provide a more efficient means for PD detection.


1974 ◽  
Vol 17 (4) ◽  
pp. 576-588 ◽  
Author(s):  
Michele Spence ◽  
Lawrence L. Feth

Many studies of auditory temporal integration by pathological ears have used listeners with an abrupt high-frequency hearing loss. While this configuration may lend itself to use of the listener as his own control, it presents the opportunity for detection of the low-frequency energy of the brief-tone bursts. This study was designed to assess the role of low-frequency energy in the determination of brief-tone thresholds of listeners with such abrupt high-frequency losses. Low-frequency energy was reduced to subthreshold levels by passing the brief tones through a filter system which had a sharp high-pass characteristic. For both normal and impaired listeners, no significant differences in threshold were found between filtered and unfiltered brief tones. Thus, we must conclude that although the opportunity for off-frequency detection is present, the abnormal temporal integration functions cannot be attributed to stimulus artifact.


Electronics ◽  
2020 ◽  
Vol 9 (7) ◽  
pp. 1089
Author(s):  
Fabrizio Palma

The use of a metal–oxide–semiconductor field-effect transistor (MOS-FET) permits the rectification of electromagnetic radiation by employing integrated circuit technology. However, obtaining a high-efficiency rectification device requires the assessment of a physical model capable of providing a qualitative and quantitative explanation of the processes involved. For a long time, high-frequency detection based on MOS technology was explained using plasma wave detection theory. In this paper, we review the rectification mechanism in light of high-frequency numerical simulations, showing features never examined until now. The results achieved substantially change our understanding of terahertz (THz) rectification in semiconductors, and can be interpreted by the model based on the self-mixing process in the device substrate, providing a new and essential tool for designing this type of detector.


2015 ◽  
Vol 49 (12) ◽  
pp. 1537-1544 ◽  
Author(s):  
A. S. Puzanov ◽  
S. V. Obolenskiy ◽  
V. A. Kozlov ◽  
E. V. Volkova ◽  
D. G. Paveliev

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