In this work, micro-EDM ([Formula: see text]EDM) characteristics of conductive SiC have been evaluated using the knowledge of existing coupled thermo-structural model. A simplified thermo-structural model of [Formula: see text]EDM process on conductive SiC has been used to simulate the [Formula: see text]EDM process on conductive SiC. So far, the studies have used traditional melting and evaporation removal mechanism during EDM simulation which is suitable for metals. In case of ceramics, material removal occurs by various phenomenon such as spalling, melting, evaporation and it depends on [Formula: see text]EDM energy and type of ceramic. Thus, we aim here to evaluate the characteristics of a SiC ceramic using the thermo-structural model. To make the model more realistic, Gaussian heat flux distribution has been used and transient study has been performed. The model uses process parameters (voltage, capacitance and time) and material properties as input to predict the transient temperature distribution, crater dimensions, volume of material removed and thermal residual stresses. To simulate the material removal, element death has been performed. The element death is purely based on attainment of certain temperature suitable for material removal irrespective of material removal mechanism. The transient thermal analysis was carried out in heating phase and the structural analysis was carried out in cooling phase. Observatory experiments were performed to add value to the model predictions.